Lateral growth of edge-emitting lasers
A method of forming a pair of edge-emitting lasers is provided. The method includes forming a mesa from a substrate, forming a cover layer on the substrate around the mesa, and forming a first barrier layer on each of opposite sidewalls of the mesa. The method further includes forming a quantum well layer on each of the barrier layers, forming a second barrier layer on each of the quantum well layers, and forming a cladding layer on each of the second barrier layers.
1. A method of forming a pair of edge-emitting lasers, comprising:
forming a mesa from a substrate, wherein the mesa has essentially straight sidewalls with a predetermined crystal face;
forming a cover layer on the substrate around the mesa;
forming a first barrier layer directly on and laterally from each of opposite sidewalls of the mesa;
forming a quantum well layer on each of the barrier layers;
forming a second barrier layer on each of the quantum well layers; and
forming a cladding layer on each of the second barrier layers.
2. The method of claim 1 , further comprising forming a mirror in the mesa.
3. The method of claim 1 , further comprising doping the mesa with an n-type or a p-type dopant, and doping the first barrier layers with the same type of dopant as the mesa.
4. The method of claim 1 , further comprising forming electrical contacts to each of the cladding layers and the mesa.
5. The method of claim 1 , wherein the first barrier layers and second barrier layers are made of aluminum-gallium-arsenide (AlGaAs).
6. The method of claim 1 , wherein the quantum well layers are made of indium-gallium-arsenide (InGaAs).
7. The method of claim 1 , wherein the quantum well layers each have a width in the range of about 5 nm to about 10 nm.
8. The method of claim 1 , wherein the first barrier layers are formed on the opposite sidewalls of the mesa by heteroepitaxial growth, and wherein the first barrier layer is in physical contact with the cover layer.
9. The method of claim 8 , wherein the quantum well layers are formed on the first barrier layers by heteroepitaxial growth.
10. The method of claim 9 , wherein the mesa is single crystal silicon, and the sidewalls of the mesa have a {111} crystal face.
11. A method of forming a pair of edge-emitting lasers, comprising:
forming a mesa from a substrate, wherein the mesa has essentially straight sidewalls with a predetermined crystal face;
doping the mesa with an n-type or a p-type dopant;
forming a cover layer on the substrate around the mesa;
forming a first barrier layer directly on each of opposite sidewalls of the mesa, wherein the first barrier layers are formed by lateral heteroepitaxial growth from opposite sidewalls of the mesa;
forming a quantum well layer on each of the barrier layers; and
forming a second barrier layer on each of the quantum well layers.
12. The method of claim 11 , further comprising forming a cladding layer on each of the second barrier layers, wherein the first barrier layer and the cladding layer are in physical contact with the cover layer.
13. The method of claim 12 , wherein the quantum well layers are formed on the first barrier layers by heteroepitaxial growth.
14. The method of claim 13 , wherein the doped mesa is single crystal silicon, and the sidewalls of the mesa have a {111} crystal face.
15. The method of claim 14 , further comprising forming a mirror in the doped mesa, wherein the mirror is between the first barrier layers.
16. A pair of edge-emitting lasers, comprising:
a doped mesa extended from a substrate, wherein the mesa has essentially straight sidewalls with a predetermined crystal face, and wherein the doped mesa forms part of a waveguide for the pair of edge-emitting lasers;
a cover layer on the substrate around the doped mesa;
a first barrier layer directly on each of opposite sidewalls of the doped mesa;
a quantum well layer on each of the barrier layers; and
a second barrier layer on each of the quantum well layers.
17. The pair of edge-emitting lasers of claim 16 , further comprising a cladding layer on each of the second barrier layers, wherein the first barrier layer and the cladding layer are in physical contact with the cover layer.
18. The pair of edge-emitting lasers of claim 16 , wherein each of the first barrier layers have a width in the range of about 20 nm to about 50 nm.
19. The pair of edge-emitting lasers of claim 16 , wherein each of the quantum well layers have a width in the range of about 5 nm to about 10 nm.
20. The pair of edge-emitting lasers of claim 16 , further comprising a mirror in the doped mesa, wherein the mirror is aligned with a long axis of the doped mesa.