Solar cell element and method of manufacturing solar cell element
A solar cell element includes a semiconductor substrate, a passivation layer and a protective layer. The semiconductor substrate includes a p-type semiconductor region on one surface side thereof. The passivation layer is located on the p-type semiconductor region and contains aluminum oxide. The protective layer is located on the passivation layer and includes polysiloxane layer which contains an alkyl group.
1. A solar cell element, comprising:
a semiconductor substrate including a p-type semiconductor region on one surface side thereof;
a passivation layer located on the p-type semiconductor region and containing aluminum oxide;
a protective layer located on the passivation layer and including a polysiloxane layer that contains an alkyl group; and
at least one electrode located on the protective layer opposite the passivation layer, wherein the at least one electrode covers substantially an entire surface of the protective layer and fills a plurality of holes passing through the protective layer and the passivation layer so as to be in direct contact with the semiconductor substrate, and wherein
the polysiloxane layer further contains silica particles.
2. The solar cell element according to claim 1 , wherein
the protective layer has a thickness of 0.1 μm to 10 μm.
3. The solar cell element according to claim 1 , wherein
the protective layer further includes a silica layer.
4. The solar cell element according to claim 3 , wherein
the silica layer in the protective layer is in contact with the passivation layer.
5. The solar cell element according to claim 3 , further comprising
a metal layer covering the protective layer, wherein
the silica layer in the protective layer is in contact with the metal layer.
6. The solar cell element according to claim 3 , wherein
the silica layer is located between the passivation layer and the polysiloxane layer.
7. The solar cell element according to claim 3 , wherein
the silica layer is thinner than the polysiloxane layer.
8. The solar cell element according to claim 1 , wherein
the polysiloxane layer contains at least one of a carboxyl group and a carbonate group.
9. The solar cell element according to claim 1 , wherein an average particle diameter of the silica particles is 20 nm to 200 nm.
10. A method of manufacturing a solar cell element, comprising:
forming a passivation layer including aluminum oxide on a p-type semiconductor region of a semiconductor substrate which includes the p-type semiconductor region on one surface side of the semiconductor substrate;
forming a coating film that includes polysiloxane oligomer and silica particles on the passivation layer, and
drying the coating film to form a protective layer that includes a polysiloxane layer containing an alkyl group and silica particles; and
forming at least one electrode located on the protective layer opposite the passivation layer, wherein the at least one electrode covers substantially an entire surface of the protective layer and fills a plurality of holes passing through the protective layer and the passivation layer so as to be in direct contact with the semiconductor substrate.
11. The method of manufacturing the solar cell element according to claim 10 , further comprising
forming a silica layer on the passivation layer after forming the passivation layer and before forming the coating film.
12. The method of manufacturing the solar cell element according to claim 10 , further comprising
oxidizing part of the alkyl group contained in the polysiloxane layer so that the polysiloxane layer contains at least one of a carboxyl group and a carbonate group.
13. The method of manufacturing the solar cell element according to claim 10 , wherein the polysiloxane layer is formed by a screen printing method.
14. The method of manufacturing the solar cell element according to claim 10 , wherein the passivation layer is formed by an ALD method.