IP Library › Granted Patent US 11,750,167
Granted Patent B2
US 11,750,167 · App. 15/823,319 · Granted Sep 5, 2023

Apparatus for radio-frequency matching networks and associated methods

Inventors: Attila Zolomy (Budapest, HU); Christopher L. McCrank (Austin, TX)
Assignee: Silicon Laboratories Inc.
H03H7/40H03F1/565H03F3/19H03F3/245H03F3/45475H03H7/38H04B1/18H03F2200/294H03F2200/451H03F2203/45731H03H2007/386H04B1/0092
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Quick Facts
Patent No.
US 11,750,167
App. No.
15/823,319
Granted
Sep 5, 2023
Kind
B2
Abstract

A radio-frequency (RF) apparatus includes a wideband receive (RX) impedance matching circuit to provide a received differential RF signal to RF receive circuitry. The wideband RX impedance matching circuit includes first and second inductors to receive the differential RF signal. The wideband RX impedance matching circuit further includes a third inductor coupled across an input o the RF receive circuitry. The third inductor performs the functionality of a capacitor having a negative capacitance value.

Claims (21)

1. A radio-frequency (RF) apparatus, comprising:

a wideband receive (RX) impedance matching circuit to provide a received differential RF signal to RF receive circuitry, the wideband RX impedance matching circuit having a relative bandwidth of 10% to 20%, wherein the wideband RX impedance matching circuit is derived from first and second single-ended matching circuits, the wideband RX impedance matching circuit comprising first and second inductors to receive the differential RF signal, and a third inductor coupled across an input of the RF receive circuitry to substitute for a capacitor having a negative capacitance value.

2. The RF apparatus according to claim 1 , wherein the wideband RX impedance matching circuit comprises a high band (HB) impedance matching circuit.

3. The RF apparatus according to claim 2 , wherein the high band (HB) impedance matching circuit operates in a band of frequencies from 780 MHz to 950 MHz.

4. The RF apparatus according to claim 1 , wherein the wideband RX impedance matching circuit comprises a low band (LB) impedance matching circuit.

5. The RF apparatus according to claim 4 , wherein the low band (LB) impedance matching circuit operates in a band of frequencies from 310 MHz to 510 MHz.

6. The RF apparatus according to claim 1 , further comprising a transmit (TX) impedance matching circuit and balun coupled to the wideband RX impedance matching circuit and to RF TX circuitry.

7. The RF apparatus according to claim 2 , wherein the wideband RX impedance matching circuit matches an impedance of the TX impedance matching circuit and balun to an impedance of the RF receive circuitry.

8. The RF apparatus according to claim 2 , further comprising a filter coupled to the TX impedance matching circuit and balun, and an antenna coupled to the filter.

9. The RF apparatus according to claim 3 , wherein the wideband RX impedance matching circuit, the TX impedance matching circuit and balun, and the filter are included in an integrated passive device (IPD).

10. A method of operating a radio-frequency (RF) apparatus comprising RF receive circuitry, the method comprising using a wideband receive (RX) impedance matching circuit, wherein the wideband RX impedance matching circuit has a relative bandwidth of 10% to 20% and is derived from first and second single-ended matching circuits, the wideband RX impedance matching circuit comprising first and second inductors to match an impedance of a circuit providing a received RF signal to an impedance of the RF receive circuitry, and to provide a differential RF signal to the RF receive circuitry, by using a third inductor coupled across an input o the RF receive circuitry, the third inductor to substitute for capacitor having a negative capacitance value.

11. The method according to claim 10 , further comprising using a TX impedance matching circuit and balun coupled to the wideband RX impedance matching circuit.

12. The method according to claim 11 , further comprising using a filter coupled to the TX impedance matching circuit and balun, and using an antenna coupled to the filter.

13. The method according to claim 12 , wherein the wideband RX impedance matching circuit, the TX impedance matching circuit and balun, and the filter are included in an integrated passive device (IPD).

14. The method according to claim 10 , wherein the wideband RX impedance matching circuit comprises a high band (HB) impedance matching circuit.

15. The method according to claim 14 , wherein the high band (HB) impedance matching circuit operates in a band of frequencies from 780 MHz to 950 MHz.

16. The method according to claim 10 , wherein the wideband RX impedance matching circuit comprises a low band (LB) impedance matching circuit.

17. The method according to claim 16 , wherein the low band (LB) impedance matching circuit operates in a band of frequencies from 310 MHz to 510 MHz.

18. The method according to claim 10 , further comprising operating the RF apparatus in a receive mode or in a transmit mode.

19. The method according to claim 18 , wherein operating the RF apparatus in the transmit mode comprises shorting the input of the RF receive circuitry.

20. The method according to claim 10 , wherein the wideband RX impedance matching circuit and a filter are included in an integrated passive device (IPD).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2017
From: ZOLOMY, ATTILA; MCCRANK, CHRISTOPHER L.
To: SILICON LABORATORIES INC.
Reel/Frame 044228/0594 →
Continuity (1)
Related Publication 20190165754A1 · May 30, 2019
Cited By (1)
US 12,407,320