Adjustment of qubit frequency through annealing
View Patent ↗An embodiment includes a method and device for forming a multi-qubit chip. The method includes forming a plurality of qubits on a chip, where each qubit comprises a Josephson junction. The method includes annealing one or more Josephson junctions. Annealing is performed by one or more of a plurality of laser emission sources on a planar lightwave circuit. Each of the laser emission sources is located above each qubit.
1. A method for forming a multi-qubit chip, the method comprising:
forming a plurality of qubits on a chip, wherein each qubit comprises a Josephson junction;
annealing one or more Josephson junctions, wherein annealing is performed by one or more of a plurality of laser discharge structures sources on a planar lightwave circuit, and wherein each of the laser discharge structures is located above each qubit.
2. The method of claim 1 , wherein a laser discharge structure of the plurality of laser discharge structures provides a laser emission wavelength of about 532 nm.
3. The method of claim 1 , wherein a laser discharge structure of the plurality of laser discharge structures provides a laser intensity of about 0.2 W to about 2 W.
4. The method of claim 1 , wherein the qubit further comprises capacitive plates located on each side of the Josephson junction, and wherein each laser discharge structure focuses a laser emission toward the Josephson junction, and wherein the laser emission avoids the capacitive plates.
5. The method of claim 1 , further comprising performing annealing through an intermediate chip.
6. The method of claim 1 , wherein a laser discharge structure of the plurality of laser discharge structures is a vertical grating coupler.
7. The method of claim 1 , wherein a laser power source is connected to a laser emission source by a mode converter and a laser path.
8. The method of claim 7 , wherein a single mode converter is attached, via a single laser path, to a single laser emission source.
9. The method of claim 7 , wherein the mode converter provides power to a plurality of laser emission sources.
10. The method of claim 9 , wherein the laser path is split into a first laser path for a first laser discharge structure and a second laser path for a second discharge structure source using a Mach Zehnder switch.
11. The method of claim 7 , wherein the laser path is an optical fiber.
12. The method of claim 7 , wherein performing annealing causes the resistance of a Josephson junction to increase, wherein the Josephson junction comprises an Al/AlO x /Al structure.
13. The method of claim 7 , wherein performing annealing causes the resistance of an aluminum/aluminum oxide/aluminum Josephson junction to decrease.