Operation method of a nonvolatile memory device for controlling a resume operation
An operation method of a nonvolatile memory device for programming memory cells connected to a selected word line, the method including: performing a program operation; suspending the program operation after performing a first portion of the program operation; and resuming the program operation to perform a second portion of the program operation, wherein the program operation is resumed within a reference time after the program operation is suspended.
1. An operation method of a nonvolatile memory device for erasing a selected memory block from among a plurality of memory blocks, the method comprising:
performing an erase operation;
suspending the erase operation after performing a first portion of the erase operation;
resuming the erase operation to perform a second portion of the erase operation, wherein the erase operation is resumed when a resume time, which is a time elapsed since the erase operation was suspended, is less than a reference time, wherein the reference time is a length of time for securing reliability of the erase operation with respect to a threshold voltage distribution of the suspended erase operation; and
erasing a memory block different than the selected memory block when the resume time is equal to or greater than the reference time.
2. An operation method of a nonvolatile memory device for erasing a selected memory block from among a plurality of memory blocks by sequentially performing a plurality of erase loops, the method comprising:
performing a first portion of an erase operation, wherein the erase operation comprises at least one of the plurality of erase loops;
suspending the erase operation after the performing of the first portion of the erase operation; and
resuming the erase operation after the suspending of the erase operation,
wherein the resuming of the erase operation after the suspending of the erase operation comprises:
determining whether a resume time has elapsed as much as a reference time, wherein the reference time is a length of time for securing reliability of the erase operation with respect to a threshold voltage distribution of the first portion of the erase operation;
when the resume time is less than the reference time, performing a second portion of the erase operation comprising the remainder of the plurality of erase loops; and
when the resume time is equal to or greater than the reference time, performing the plurality of erase loops starting from the beginning of the sequence to complete the erase operation for the selected memory block.
3. The operation method of claim 2 , wherein the suspending of the erase operation after the performing of the first portion of the erase operation comprises:
suspending the erase operation in response to a retrieve request received by the nonvolatile memory device; and
performing a read operation of the nonvolatile memory device.
4. The operation method of claim 2 , wherein,
when the resume time is equal to or greater than the reference time, performing a pre-program operation on the selected memory block.
5. The operation method of claim 4 , wherein, when the resume time is equal to or greater than the reference time, the performing of the pre-program operation on the selected memory block comprises:
applying a program voltage to a plurality of word lines connected to the selected memory block.
6. An operation method of a nonvolatile memory device for erasing a selected memory block from among a plurality of memory blocks by sequentially performing a plurality of erase loops, the method comprising:
performing a first portion of an erase operation, wherein the erase operation comprises at least one of the plurality of erase loops;
suspending the erase operation after the performing of the first portion of the erase operation; and
resuming the erase operation after the suspending of the erase operation,
wherein the resuming of the erase operation after the suspending of the erase operation further comprises:
determining whether a resume time, which corresponds to a time from when the erase operation is suspended until the erase operation resumes, has elapsed as much as a reference time, wherein the reference time is a length of time for securing reliability of the erase operation with respect to a threshold voltage distribution of the first portion of the erase operation; and
when the resume time is equal to or greater than the reference time, ignoring the first portion of the erase operation, and erasing a memory block different than the selected memory block.