IP Library › Patent Application 15826005
Patent Application
App. No. 15/826,005

PROCESS FOR FABRICATING SILICON NANOSTRUCTURES

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Quick Facts
Patent No.
US None
App. No.
15/826,005
Abstract

A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.

Claims (1)

1 . A nanostructured array comprising polycrystalline silicon, wherein the nanostructures of the array have lengthwise directions disposed at a non-zero angle to a silicon-containing substrate, wherein the array is formed by etching a substrate composed primarily of polycrystalline silicon.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2017
From: BUCHINE, BRENT A.; BLACK, MARCIE R.; MODAWAR, FARIS
To: BANDGAP ENGINEERING, INC.
Reel/Frame 044328/0888 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2017
From: BLACK, MARCIE R.; ADAMS, TRACY; CHLEBOSKI, RICHARD; DANE SHULMAN ASSOCIATES, LLC; MASSACHUSETTS GREEN ENERGY FUND I LP; SHAW, ROBERT W., JR.; NEW ENTERPRISE ASSOCIATES 12, LP
To: ADVANCED SILICON GROUP, INC.
Reel/Frame 044328/0894 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2017
From: BANDGAP ENGINEERING, INC.
To: BLACK, MARCIE R.; ADAMS, TRACY; CHLEBOSKI, RICHARD; DANE SHULMAN ASSOCIATES, LLC; MASSACHUSETTS GREEN ENERGY FUND I LP; NEW ENTERPRISE ASSOCIATES 12, LP; SHAW, ROBERT W., JR.
Reel/Frame 044755/0041 →