Patent Application
App. No. 15/826,005
PROCESS FOR FABRICATING SILICON NANOSTRUCTURES
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Abstract
A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
Claims (1)
1 . A nanostructured array comprising polycrystalline silicon, wherein the nanostructures of the array have lengthwise directions disposed at a non-zero angle to a silicon-containing substrate, wherein the array is formed by etching a substrate composed primarily of polycrystalline silicon.
Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Dec 7, 2017
From: BUCHINE, BRENT A.; BLACK, MARCIE R.; MODAWAR, FARIS
To: BANDGAP ENGINEERING, INC.
Reel/Frame 044328/0888 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Dec 7, 2017
From: BLACK, MARCIE R.; ADAMS, TRACY; CHLEBOSKI, RICHARD; DANE SHULMAN ASSOCIATES, LLC; MASSACHUSETTS GREEN ENERGY FUND I LP; SHAW, ROBERT W., JR.; NEW ENTERPRISE ASSOCIATES 12, LP
To: ADVANCED SILICON GROUP, INC.
Reel/Frame 044328/0894 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Dec 7, 2017
From: BANDGAP ENGINEERING, INC.
To: BLACK, MARCIE R.; ADAMS, TRACY; CHLEBOSKI, RICHARD; DANE SHULMAN ASSOCIATES, LLC; MASSACHUSETTS GREEN ENERGY FUND I LP; NEW ENTERPRISE ASSOCIATES 12, LP; SHAW, ROBERT W., JR.
Reel/Frame 044755/0041 →