Transistor assembly, and organic light emitting display panel and organic light emitting display device including the same

1. A transistor assembly comprising:

a substrate;

a switching channel provided on the substrate;

a gate insulation layer provided on the switching channel to overlap a switching active part of the switching channel;

a switching gate provided on the gate insulation layer to overlap the switching active part;

a first insulation layer overlying and covering the switching channel, the gate insulation layer, and the switching gate, the first insulation layer having a bottom surface and a top surface;

a driving channel provided overlying and on the first insulation layer;

a second insulation layer covering the driving channel and the first insulation layer;

a first electrode connected to a first conductor part of the switching channel and provided on the second insulation layer; and

a second electrode connected to a second conductor part of the switching channel and provided on the second insulation layer,

wherein the first conductor part of the switching channel is disposed as a single, integral member to fully overlap a driving active part of the driving channel to act as a driving gate for the driving channel,

wherein the bottom surface of the first insulation layer is in contact with the first conductor part of the switching channel and the top surface of the first insulation layer is in contact with the driving active part of the driving channel.

2. The transistor assembly of claim 1 , further comprising a driving transistor that includes the first insulation layer as the driving transistor gate insulator and the driving channel as the channel of the driving transistor.

3. The transistor assembly of claim 1 , wherein the first conductor part is a source of a switching transistor.

4. The transistor assembly of claim 1 , wherein a third conductor part of the driving channel is disposed to overlap the first conductor part of the switching channel.

5. The transistor assembly of claim 4 , wherein the third conductor part of the driving channel is a source of a driving transistor.

6. The transistor assembly of claim 1 , wherein the first electrode is disposed to overlap a third conductor part of the driving channel.

7. The transistor assembly of claim 1 , wherein

the first electrode is disposed to overlap a third conductor part of the driving channel, and a first storage capacitance is provided between the first electrode and the third conductor part, and

the third conductor part of the driving channel is disposed to overlap the first conductor part of the switching channel, and a second storage capacitance is provided between the first conductor part and the third conductor part.

8. The transistor assembly of claim 1 , further comprising: a blocking layer provided in the driving channel to overlap the driving active part of the driving channel, the blocking layer being covered by the second insulation layer.

9. The transistor assembly of claim 1 , wherein a thickness of the first insulation layer is greater than a thickness of the gate insulation layer.

10. An organic light emitting display panel comprising:

the transistor assembly of claim 1 ;

a passivation layer covering the first electrode, the second electrode, and the second insulation layer; and

an organic light emitting diode provided on the passivation layer.

11. The organic light emitting display panel of claim 10 , wherein an anode of the organic light emitting diode is connected to a third conductor part of the driving channel.

12. An organic light emitting display device comprising:

the organic light emitting display panel of claim 10 ;

a gate driver supplying a gate pulse to a plurality of gate lines included in the organic light emitting display panel;

a data driver respectively supplying data voltages to a plurality of data lines included in the organic light emitting display panel; and

a controller controlling the gate driver and the data driver.

13. A transistor assembly comprising:

a substrate;

a switching transistor positioned on the substrate, the switching transistor including a switching channel, a gate insulation layer positioned on the switching channel to overlap a switching active part of the switching channel and a gate electrode positioned on the gate insulation layer, the switching channel including a source region, a drain region and the switching active part;

a first insulation layer overlying and covering the switching channel, the gate insulation layer, and the gate electrode;

a driving transistor having a driving channel overlying and on the first insulation layer, the first insulation layer acting as the gate dielectric to the driving transistor;

a second insulation layer overlying and covering the driving channel and the first insulation layer;

a first electrode connected to the source region of the switching transistor and positioned overlying the source region; and

a second electrode connected to the drain region of the switching transistor and positioned overlying the drain region,

wherein the source region of the switching channel extends as a single, integral member to be fully below the driving channel of the driving transistor and to act as a driving gate for the driving channel,

wherein the first electrode forms a first capacitor plate by extending laterally in a location positioned on the second insulation layer overlying an conductive region of the driving transistor that is below the second insulation layer, the conductive region of the driving transistor forming a second capacitor plate.

14. The transistor assembly of claim 13 wherein the conductive region of the driving transistor is the drain.

15. A light emitting diode assembly comprising:

a substrate;

a switching transistor positioned on the substrate, the switching transistor including a switching channel;

a source region of the switching transistor being coupled to a data line;

a drain region of the switching transistor being coupled to a driving transistor gate;

a gate insulation layer of the switching transistor being positioned on the switching channel to overlap a switching active part of the switching channel;

a gate electrode of the switching transistor being positioned on the gate insulation layer;

a first insulation layer overlying and covering the switching channel, the gate insulation layer, and the gate electrode;

a driving transistor having a driving channel overlying and on the first insulation layer, the first insulation layer acting as the gate dielectric to the driving transistor;

a second insulation layer overlying and covering the driving channel and the first insulation laver;

a first electrode connected to the source region of the switching transistor and positioned overlying the source region;

a second electrode connected to the drain region of the switching transistor and positioned overlying the drain region; and

a light emitting diode positioned above the switching transistor and the driving transistor,

wherein the source region of the switching channel extends as a single, integral member to be fully below by the driving channel of the driving transistor and to act as a driving gate for the driving channel,

wherein the first electrode forms a first capacitor plate by extending laterally in a location positioned on the second insulation layer overlying an conductive region of the driving transistor that is below the second insulation layer, the conductive region of the driving transistor forming a second capacitor plate.

16. The light emitting diode assembly of claim 15 wherein the light emitting diode is positioned overlying the driving transistor but not overlying the switching transistor.

17. The light emitting diode assembly of claim 15 further including a passivation layer positioned between the light emitting diode and the switching transistor and the driving transistor.