Reflective mask blank, reflective mask, method for manufacturing reflective mask blank, and method for manufacturing semiconductor device
A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
1. A reflective mask blank comprising:
a substrate, and
a multilayer reflective film, a protective film, and a phase-shift film for shifting a phase of EUV light, which are formed in said order on the substrate,
wherein the protective film is made of a material containing ruthenium as a main component, and
wherein an anti-diffusion layer which contains ruthenium and oxygen is formed on a surface of the protective film, or as a part of the protective film on a side adjacent to the phase-shift film, so as to inhibit counter diffusion in relation to the phase-shift film.
2. The reflective mask blank according to claim 1 , wherein the phase-shift film has a material layer which is etchable with a chlorine-based gas or a fluorine-based gas, and wherein the material layer is adjacent to the anti-diffusion layer.
3. The reflective mask blank according to claim 1 , wherein a thickness of the anti-diffusion layer is not less than 0.2 nm and not more than 1.5 nm.
4. The reflective mask blank according to claim 1 , wherein a ratio of oxygen to ruthenium in the anti-diffusion layer is not less than 0.8 and not more than 2.2.
5. The reflective mask blank according to claim 1 , wherein the phase-shift film is formed in a laminated structure, and has a chromium-based material layer as an outermost surface layer.
6. The reflective mask blank according to claim 5 , wherein the chromium-based material layer comprises carbon.
7. The reflective mask blank according to claim 1 , wherein the phase-shift film is formed in a laminated structure, and has a ruthenium-based material layer as an outermost surface layer.
8. The reflective mask blank according to claim 1 , wherein an etching mask film is formed on the phase-shift film.
9. The reflective mask blank according to claim 1 , wherein an uppermost layer of the multilayer reflective film is silicon (Si), and a silicon oxide layer comprising silicon and oxygen is provided between the uppermost layer and the protective film.
10. A method for manufacturing a reflective mask blank, comprising forming the phase-shift film in the reflective mask blank according to claim 1 by a sputtering method, continuously without exposure to the atmosphere from the beginning to the end of film formation.
11. The reflective mask blank according to claim 1 , wherein the protective film is made of a material which is a Ru metal simple substance; a Ru alloy containing Ru and at least one metal selected from Nb, Zr, Y, B, Ti, La, Mo, Co, and Re; a Ru metal simple substance containing nitrogen; or a Ru alloy containing Ru, nitrogen, and at least one metal selected from Nb, Zr, Y, B, Ti, La, Mo, Co, and Re.
12. The reflective mask blank according to claim 1 , wherein the anti-diffusion layer contains N or H.
13. A reflective mask comprising:
a substrate, and
a multilayer reflective film, a protective film, and a phase-shift film pattern for shifting a phase of EUV light, which are formed in said order on the substrate,
wherein the protective film is made of a material containing ruthenium as a main component, and
wherein an anti-diffusion layer which contains ruthenium and oxygen is formed on a surface of the protective film, or as a part of the protective film on a side adjacent to the phase-shift film pattern, so as to inhibit counter diffusion in relation to the phase-shift film pattern.
14. The reflective mask according to claim 13 , wherein a thickness of the anti-diffusion layer is not less than 0.2 nm and not more than 1.5 nm.
15. The reflective mask according to claim 13 , wherein a ratio of oxygen to ruthenium in the anti-diffusion layer is not less than 0.8 and not more than 2.2.
16. The reflective mask according to claim 13 , wherein the phase-shift film pattern is formed in a laminated structure, and has a ruthenium-based material layer as an outermost surface layer.
17. The reflective mask according to claim 13 , wherein the protective film is made of a material which is a Ru metal simple substance; a Ru alloy containing Ru and at least one metal selected from Nb, Zr, Y, B, Ti, La, Mo, Co, and Re; a Ru metal simple substance containing nitrogen; or a Ru alloy containing Ru, nitrogen, and at least one metal selected from Nb, Zr, Y, B, Ti, La, Mo, Co, and Re.
18. The reflective mask according to claim 13 , wherein the anti-diffusion layer contains N or H.
19. A method for manufacturing a semiconductor device, comprising:
setting a reflective mask in an exposure apparatus having an exposure light source for emitting EUV light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate,
wherein the reflective mask comprises:
a substrate, and
a multilayer reflective film, a protective film, and a phase-shift film pattern for shifting a phase of EUV light, which are formed in said order on the substrate,
wherein the protective film is made of a material containing ruthenium as a main component, and
wherein an anti-diffusion layer which contains ruthenium and oxygen is formed on a surface of the protective film, or as a part of the protective film on a side adjacent to the phase-shift film pattern, so as to inhibit counter diffusion in relation to the phase-shift film pattern.
20. The method for manufacturing a semiconductor device according to claim 19 , wherein an electric power consumption of the exposure light source is 80 W or more.