IP Library Granted Patent US 10,451,590
Granted Patent B2
US 10,451,590 · App. 15/830,600 · Granted Oct 22, 2019

Sensors, methods of making and devices

Inventors: James Russell Webster (Minnetonka, MN); Peter J. Schiller (Coon Rapids, MN); Richard Allan Van Deusen (St. Paul, MN); Ian Robert Harmon (Minneapolis, MN)
Assignee: QORVO US, INC.
G01N29/2437C23C16/06C23C16/45525G01N29/022G01N29/036G01N29/30G01N33/54373G01N2291/014G01N2291/0255G01N2291/0256G01N2291/0257G01N2291/0426
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Quick Facts
Patent No.
US 10,451,590
App. No.
15/830,600
Granted
Oct 22, 2019
Kind
B2
Abstract

Disclosed sensors can include at least one resonator (in some embodiments, at least two resonators) and various other structures that may be formed in association with the resonators. The at least one resonator in embodiments can include a bottom electrode, a piezoelectric layer, and a top electrode, wherein the piezoelectric layer is positioned between the bottom electrode and the top electrode.

Claims (26)

1. An assembly comprising:

at least one active sensor and at least one reference sensor, wherein each of the active sensor and the reference sensor comprises:

at least a first resonator, the at least first resonator having a first surface and an opposing second surface and the first resonator comprising:

a bottom electrode;

a piezoelectric layer; and

a top electrode,

wherein the piezoelectric layer is positioned between the bottom electrode and the top electro;

a metal oxide layer positioned on at least the second surface of the first and second resonator of both the at least one active and at least one reference sensors, the metal oxide layer having a thickness from about 10 Å to about 500 Å and the metal oxide layer comprising oxygen atoms;

a coupling layer, the coupling layer comprising silicon atoms, the silicon atoms of the silane layer bound to oxygen atoms in the metal oxide layer;

thickness from about 10 Å to about 500 Å and the metal oxide layer comprising oxygen atoms;

a coupling layer, the coupling layer comprising silicon atoms, the silicon atoms of the coupling layer bound to oxygen atoms in the metal oxide layer;

a molecular recognition component layer, the molecular recognition component of the molecular recognition component layer bound to the coupling layer over the at least one active sensor; and

a reference binding material layer, the reference binding material of the reference binding material layer bound to the coupling layer over the at least one reference sensor,

wherein the reference binding material is different than the molecular recognition component.

2. The assembly according to claim 1 , wherein the assembly comprises at least one reference sensor and at least two active sensors.

3. The assembly according to claim 1 , wherein the assembly comprises at least one reference sensor at least three active sensors.

4. The assembly according to claim 1 , wherein both the at least one active sensor and the at least one reference sensor have substantially the same shape.

5. The assembly according to claim 1 , wherein both the at least one active sensor and the at least one reference sensor have a substantially circular shape.

6. The assembly according to claim 1 , wherein both the at least one active sensor and the at least one reference sensor have a substantially circular shape.

7. The assembly according to claim 1 , wherein the metal oxide layer is selected from TiO 2 , SiO 2 , Al 2 O 3 , or ZnO.

8. The assembly according to claim 1 , wherein the metal oxide layer has a thickness from about 75 Å to about 125 Å.

9. The assembly according to claim 1 , wherein the metal oxide layer is deposited using atomic layer deposition.

10. The assembly according to claim 1 , wherein the metal oxide layer is deposited over the entirety of the sensor.

11. The assembly according to claim 1 , wherein the coupling layer comprises an epoxy silane.

12. The assembly according to claim 1 , wherein the molecular recognition component is an antibody.

13. The assembly according to claim 1 , wherein the sensor further comprises a Bragg reflector stack positioned beneath the bottom electrode of at least the first resonator.

Assignments (4)
CHANGE OF NAME Recorded Jun 20, 2024
From: QORVO BIOTECHNOLOGIES, LLC
To: ZOMEDICA BIOTECHNOLOGIES LLC
Reel/Frame 067799/0167 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2018
From: QORVO US, INC.
To: QORVO BIOTECHNOLOGIES, LLC
Reel/Frame 047794/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 2, 2018
From: WEBSTER, JAMES RUSSELL; SCHILLER, PETER J.; VAN DEUSEN, RICHARD ALLAN; HARMON, IAN ROBERT
To: RAPID DIAGNOSTEK
Reel/Frame 044512/0766 →
ASSET PURCHASE Recorded Jan 2, 2018
From: RAPID DIAGNOSTEK, INC.
To: QORVO US, INC.
Reel/Frame 044969/0760 →
Continuity (3)
Division 14893395
Provisional Application 61826884 · May 23, 2013
Related Publication 20180100833A1 · Apr 12, 2018