Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating dotted diffusion

1. A solar cell, comprising:

a substrate having a light-receiving surface and a back surface;

a first polycrystalline silicon emitter region of P+ conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate;

a second polycrystalline silicon emitter region of N+ conductivity type disposed on a second thin dielectric layer disposed in a plurality of non-continuous regions in the back surface of the substrate;

a first conductive contact structure electrically connected to the first polycrystalline silicon emitter region;

an insulator layer disposed on the first polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer, and wherein a portion of the second polycrystalline silicon emitter region overlaps the insulator layer but is separated from the first conductive contact structure; and

a third thin dielectric layer between the first polycrystalline silicon emitter region and the second polycrystalline silicon emitter, the third dielectric layer having an uppermost surface co-planar with an uppermost surface of the first polycrystalline silicon emitter region.

2. The solar cell of claim 1 , wherein each of the plurality of non-continuous regions has a width approximately in the range of 30 60 microns, and wherein successive ones of the plurality of non-continuous regions are spaced apart at a distance approximately in the range of 50-300 microns.

3. The solar cell of claim 2 , wherein each of the plurality of non-continuous regions has a depth approximately in the range of 0.5-10 microns from the back surface and into the substrate.

4. The solar cell of claim 1 , wherein each of the non-continuous regions has an approximately circular shape.

5. The solar cell of claim 1 , further comprising:

a second conductive contact structure electrically connected to the second polycrystalline silicon emitter region.

6. The solar cell of claim 1 , wherein each of the non-continuous regions has a texturized surface.

7. The solar cell of claim 6 , wherein the second thin dielectric layer is confined to the plurality of non-continuous regions and is conformal with the texturized surface of the plurality of non-continuous regions.

8. The solar cell of claim 7 , wherein the second thin dielectric layer is physically separated from the first conductive contact structure.

9. The solar cell of claim 1 , wherein the first polycrystalline silicon emitter region is laterally adjacent to the second polycrystalline silicon emitter region and is electrically isolated from the second polycrystalline silicon emitter region by the third thin dielectric layer, the third thin dielectric layer non-continuous with the second thin dielectric layer.

10. The solar cell of claim 9 , wherein the third thin dielectric layer has a vertical thickness and a lateral thickness, and the vertical thickness is greater than the lateral thickness.

11. A solar cell, comprising:

a substrate having a light-receiving surface and a back surface;

a first polycrystalline silicon emitter region of N+ conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate;

a second polycrystalline silicon emitter region of P+ conductivity type disposed on a second thin dielectric layer disposed in a plurality of non-continuous regions in the back surface of the substrate;

a first conductive contact structure electrically connected to the first polycrystalline silicon emitter region;

an insulator layer disposed on the first polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer, and wherein a portion of the second polycrystalline silicon emitter region overlaps the insulator layer but is separated from the first conductive contact structure; and

a third thin dielectric layer between the first polycrystalline silicon emitter region and the second polycrystalline silicon emitter, the third dielectric layer having an uppermost surface co-planar with an uppermost surface of the first polycrystalline silicon emitter region.

12. The solar cell of claim 11 , wherein each of the plurality of non-continuous regions has a width approximately in the range of 30-60 microns, and wherein successive ones of the plurality of non-continuous regions are spaced apart at a distance approximately in the range of 50-300 microns.

13. The solar cell of claim 12 , wherein each of the plurality of non-continuous regions has a depth approximately in the range of 0.5-10 microns from the back surface and into the substrate.

14. The solar cell of claim 11 , wherein each of the non-continuous regions has an approximately circular shape.

15. The solar cell of claim 11 , further comprising:

a second conductive contact structure electrically connected to the second polycrystalline silicon emitter region.

16. The solar cell of claim 11 , wherein each of the non-continuous regions has a texturized surface.

17. The solar cell of claim 16 , wherein the second thin dielectric layer is confined to the plurality of non-continuous regions and is conformal with the texturized surface of the plurality of non-continuous regions.

18. The solar cell of claim 17 , wherein the second thin dielectric layer is physically separated from the first conductive contact structure.

19. The solar cell of claim 11 , wherein the first polycrystalline silicon emitter region is laterally adjacent to the second polycrystalline silicon emitter region and is electrically isolated from the second polycrystalline silicon emitter region by the third thin dielectric layer, the third thin dielectric layer non-continuous with the second thin dielectric layer.

20. The solar cell of claim 19 , wherein the third thin dielectric layer has a vertical thickness and a lateral thickness, and the vertical thickness is greater than the lateral thickness.