Semiconductor device and manufacturing method thereof
A Si photonics device includes: a first semiconductor chip; a second semiconductor chip having a laser diode and mounted on the first semiconductor chip; a third semiconductor chip taking in a laser beam emitted from the laser diode and mounted on the first semiconductor chip; and a resin layer disposed on the first semiconductor chip so as to face the second semiconductor chip. Further, the Si photonics device has: a bump electrode connecting the second semiconductor chip and an upper layer electrode pad provided on the resin layer of the first semiconductor chip; and a bump electrode connecting the first semiconductor chip and the third semiconductor chip, and the second semiconductor chip is mounted on the first semiconductor chip via the resin layer.
1. A semiconductor device comprising:
a first semiconductor chip, a first electrode pad being formed on a main surface of the first semiconductor chip;
a second semiconductor chip, a second electrode pad being formed on a main surface of the second semiconductor chip and being mounted on the main surface of the first semiconductor chip;
a third semiconductor chip, a third electrode pad being formed on a main surface of the third semiconductor chip and being mounted on the main surface of the first semiconductor chip;
a resin layer provided on the main surface of the first semiconductor chip and disposed to face the main surface of the second semiconductor chip;
a first projecting electrode electrically connecting a fourth electrode pad and the second electrode pad of the second semiconductor chip, the fourth electrode pad being electrically connected to the first electrode pad and being provided on the resin layer; and
a second projecting electrode electrically connecting the first electrode pad of the first semiconductor chip and the third electrode pad of the third semiconductor chip,
wherein the second semiconductor chip includes a light emitting source,
the third semiconductor chip has an optical waveguide for taking in light emitted from the light emitting source,
the fourth electrode pad is disposed above the first electrode pad on the first semiconductor chip,
the second semiconductor chip is mounted on the first semiconductor chip via the resin layer,
an optical fiber cable transmitting an optical signal outputted from the third semiconductor chip is connected to the third semiconductor chip, and
the optical fiber cable is in contact with an edge of the main surface of the first semiconductor chip.
2. The semiconductor device according to claim 1 ,
wherein a height of the first projecting electrode and a height of the second projecting electrode are different from each other.
3. The semiconductor device according to claim 2 ,
wherein the height of the second projecting electrode is lower than the height of the first projecting electrode.
4. The semiconductor device according to claim 1 ,
wherein a thickness of the second semiconductor chip and a thickness of the third semiconductor chip are different from each other.
5. The semiconductor device according to claim 4 ,
wherein the thickness of the third semiconductor chip is greater than the thickness of the second semiconductor chip.
6. The semiconductor device according to claim 1 ,
wherein each of the first projecting electrode and the second projecting electrode to be provided is three or more in number.
7. The semiconductor device according to claim 1 ,
wherein an optical fiber cable transmitting an optical signal outputted from the third semiconductor chip is connected to the third semiconductor chip, and
the optical fiber cable is in contact with the second projecting electrode.