Carrier substrate, laminate, and method for manufacturing electronic device
A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.
1. A carrier substrate for manufacturing a member for an electronic device on a surface of a substrate by bonding the carrier substrate to the substrate, the carrier substrate comprising:
a first glass substrate,
wherein the first glass substrate has a compaction of 80 ppm or less, wherein the compaction is determined as a shrinkage when subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour,
wherein the first glass substrate comprises a glass comprising, in terms of mass percentages based on oxides, the following:
SiO 2 : 50% to 62.1%,
Al 2 O 3 : 19% to 22%,
B 2 O 3 : 0.1% to 3%,
MgO: 0% to 10%,
CaO: 4.1% to 14.5%,
SrO: 1% to 9%,
BaO: 0.1% to 7.6%, and
MgO+CaO+SrO+BaO: 8% to 29.5%.
2. The carrier substrate according to claim 1 , wherein the compaction is 70 ppm or less.
3. The carrier substrate according to claim 1 , wherein the first glass substrate has a strain point of 700° C. or more.
4. The carrier substrate according to claim 1 , further comprising an adhesive layer arranged on the first glass substrate.
5. The carrier substrate of claim 1 , wherein an external transmittance of the first glass substrate of 300 nm is 50% or more.
6. The carrier substrate of claim 1 , wherein Vickers hardness of the first glass substrate is 580 or higher.
7. The carrier substrate of claim 1 , wherein the glass of the first glass substrate comprises from 4.1 mass % to 7 mass % of CaO.
8. A laminate comprising:
the carrier substrate according to claim 1 ; and
the substrate arranged on the carrier substrate.
9. The laminate according to claim 8 , wherein the substrate is a second glass substrate.
10. A method for manufacturing an electronic device, the method comprising:
forming a member for an electronic device on a surface of the substrate of the laminate according to claim 8 to obtain a member for an electronic device-attached-laminate; and
removing the carrier substrate from the member for an electronic device-attached-laminate to obtain an electronic device having the substrate and the member for an electronic device.
11. The method for manufacturing an electronic device according to claim 10 , wherein the member for an electronic device comprises a low-temperature polysilicon (LTPS).
12. The method for manufacturing an electronic device according to claim 11 , wherein in the forming of the member for an electronic device a temperature is 450° C. or more.
13. A carrier substrate for manufacturing a member for an electronic device on a surface of a substrate by bonding the carrier substrate to the substrate, the carrier substrate comprising:
a first glass substrate,
wherein the first glass substrate has a compaction of 80 ppm or less, wherein the compaction is determined as a shrinkage when subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour,
wherein the first glass substrate comprises a glass comprising, in terms of mass percentages based on oxides, the following:
SiO 2 : 50% to 62.1%,
Al 2 O 3 : 19% to 22%,
B 2 O 3 : 0.1% to 5%,
MgO: 0% to 6%,
CaO: 4.1% to 14.5%,
SrO: 2.3% to 24%,
BaO: 0.1% to 5%, and
MgO+CaO+SrO+BaO: 8% to 29.5%.
14. The carrier substrate of claim 13 , wherein Vickers hardness of the first glass substrate is 580 or higher.
15. The carrier substrate of claim 13 , wherein the glass of the first glass substrate comprises from 4.1 mass % to 7 mass % of CaO.
16. The carrier substrate according to claim 13 , wherein the first glass substrate has a strain point of 700° C. or more.
17. The carrier substrate of claim 13 , wherein the glass comprises, in terms of mass percentages based on oxides, 57% to 62.1% of SiO 2 .
18. The carrier substrate of claim 13 , wherein the glass comprises, in terms of mass percentages based on oxides, 2.3% to 9% of SrO.
19. A laminate comprising:
the carrier substrate according to claim 13 ; and
the substrate arranged on the carrier substrate.
20. The laminate according to claim 19 , wherein the substrate is a second glass substrate.
21. A carrier substrate for manufacturing a member for an electronic device on a surface of a substrate by bonding the carrier substrate to the substrate, the carrier substrate comprising:
a first glass substrate,
wherein the first glass substrate has a compaction of 80 ppm or less, wherein the compaction is determined as a shrinkage when subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour,
wherein the first glass substrate comprises a glass comprising, in terms of mass percentages based on oxides, the following:
SiO 7 : 50% to 62.1%,
Al 2 O 3 : 19% to 22%,
B 2 O 3 : 0.1% to 3%,
MgO: 0% to 10%,
CaO: 4.1% to 14.5%,
SrO: 2.3% to 24%,
BaO: 0.1% to 7.6%, and
MgO+CaO+SrO+BaO: 8% to 29.5%.
22. The carrier substrate of claim 21 , wherein an external transmittance of the first glass substrate of 300 nm is 50% or more.
23. The carrier substrate of claim 21 , wherein Vickers hardness of the first glass substrate is 580 or higher.
24. The carrier substrate of claim 21 , wherein the glass of the first glass substrate comprises from 4.1 mass % to 7 mass % of CaO.
25. The carrier substrate according to claim 21 , wherein the first glass substrate has a strain point of 700° C. or more.
26. The carrier substrate of claim 21 , wherein the glass comprises, in terms of mass percentages based on oxides, 0.1% to 5% of BaO.
27. A laminate comprising:
the carrier substrate according to claim 21 ; and
the substrate arranged on the carrier substrate.
28. The laminate according to claim 27 , wherein the substrate is a second glass substrate.
29. A carrier substrate for manufacturing a member for an electronic device on a surface of a substrate by bonding the carrier substrate to the substrate, the carrier substrate comprising:
a first glass substrate,
wherein the first glass substrate has a compaction of 80 ppm or less, wherein the compaction is determined as a shrinkage when subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour,
wherein the first glass substrate comprises a glass comprising, in terms of mass percentages based on oxides, the following:
SiO 2 : 50% to 62.1%,
Al 2 O 3 : 19% to 22%,
B 2 O 3 : 0.1% to 5%,
MgO: 0% to 6%,
CaO: 4.1% to 14.5%,
SrO: 2.3% to 24%,
BaO: 0.1% to 5%, and
MgO+CaO+SrO+BaO: 8% to 29.5%,
wherein an external transmittance of the first glass substrate of 300 nm is 50% or more.
30. The carrier substrate of claim 29 , wherein Vickers hardness of the first glass substrate is 580 or higher.
31. The carrier substrate of claim 29 , wherein the glass of the first glass substrate comprises from 4.1 mass % to 7 mass % of CaO.
32. The carrier substrate according to claim 29 , wherein the first glass substrate has a strain point of 700° C. or more.
33. The carrier substrate of claim 29 , wherein the glass comprises, in terms of mass percentages based on oxides, 1% to 5% of BaO.
34. A laminate comprising:
the carrier substrate according to claim 29 ; and
the substrate arranged on the carrier substrate.
35. The laminate according to claim 34 , wherein the substrate is a second glass substrate.