Carrier substrate, laminate, and method for manufacturing electronic device
A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.
1 . A method for manufacturing an electronic device, the method comprising:
forming a member for an electronic device on a surface of a substrate of a laminate comprising a carrier substrate and the substrate formed on the carrier substrate to obtain a member for an electronic device-attached-laminate; and
removing the carrier substrate from the member for an electronic device-attached-laminate to obtain an electronic device having the substrate and the member for an electronic device,
wherein the carrier substrate comprises at least a first glass substrate,
the first glass substrate has a compaction of from 20 to 80 ppm, wherein the compaction is determined as a shrinkage when subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour,
the first glass substrate comprises a glass comprising, in terms of mass percentages based on oxides, the following:
from 57% to 62.1% of SiO 2 ,
from 19% to 24% of Al 2 O 3 ,
from 2.6% to less than 5% of B 2 O 3 ,
from 2% to 6% of MgO,
from 4.1% to 7% of CaO,
from 2.3% to 9% of SrO,
from 1% to 10% of BaO, and
from 14% to 16% of MgO+CaO+SrO+BaO, and
the first glass substrate has a strain point of at least 700° C.
2 . The method for manufacturing an electronic device according to claim 1 , wherein the compaction is from 20 to 70 ppm.
3 . The method for manufacturing an electronic device according to claim 1 , wherein the member for an electronic device comprises a low-temperature polysilicon (LTPS).
4 . The method for manufacturing an electronic device according to claim 1 , wherein in the forming of the member for an electronic device a temperature is at least 450° C.
5 . The method for manufacturing an electronic device according to claim 1 , wherein the carrier substrate further comprises an adhesive layer formed on the first glass substrate.