Semiconductor device having first and second fin-type patterns and method of fabricating the same

1. A semiconductor device comprising:

a first fin-type pattern comprising a first long side, wherein the first long side extends in a first direction, and a first short side, wherein the first short side extends in a second direction that is different from the first direction, and wherein the first fin-type pattern extends in the first direction;

a second fin-type pattern arranged substantially parallel to the first fin-type pattern comprising a second long side, wherein the second long side extends in the first direction and is opposite to the first long side of the first fin-type pattern; and

a first gate electrode intersecting the first fin-type pattern and the second fin-type pattern,

wherein the first gate electrode extends in the second direction;

wherein the second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern in the first direction,

wherein the first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern,

wherein at least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth in a third direction perpendicular to the first and second directions, and

wherein the first trench directly adjoins a second trench having a second depth in the third direction, which is greater than the first depth.

2. The semiconductor device of claim 1 , wherein

the first long side of the first fin-type pattern and the second long side of the second fin-type pattern are defined by a third trench having a third depth, and

the third depth is greater than, or the same as, the first depth and is less than the second depth.

3. The semiconductor device of claim 1 , wherein a sidewall of the first trench is directly connected to a sidewall of the second trench.

4. The semiconductor device of claim 1 , further comprising:

a connecting portion connecting a sidewall of the first trench and a sidewall of the second trench.

5. The semiconductor device of claim 1 , further comprising:

a field insulating film partially filling the first and second trenches,

wherein a distance from a top surface of the first fin-type pattern to a top surface of the field insulating film is less than the second depth of the second trench.

6. The semiconductor device of claim 1 , further comprising:

a third fin-type pattern comprising a third long side, wherein the third long side is opposite to the first long side, and a second short side, wherein the second short side extends in the second direction,

wherein the first fin-type pattern is positioned between the second and third fin-type patterns,

wherein the second fin-type pattern comprises a second protrusion portion that protrudes beyond the second short side of the third fin-type pattern in the first direction, and

wherein the first gate electrode overlaps with an end portion of the third fin-type pattern that comprises the second short side of the third fin-type pattern.

7. The semiconductor device of claim 6 , wherein a sidewall of the third fin-type pattern that defines the second short side of the third fin-type pattern is defined by the second trench.

8. The semiconductor device of claim 6 , wherein at least part of a sidewall of the third fin-type pattern that defines the second short side of the third fin-type pattern is defined by the first trench.

9. The semiconductor device of claim 1 , wherein

the first fin-type pattern comprises a second short side, which is opposite to the first short side,

at least part of a second sidewall of the first fin-type pattern that defines a second short side of the first fin-type pattern is defined by a third trench having a third depth,

the third depth is substantially the same as the first depth, and

the third trench directly adjoins the second trench.

10. The semiconductor device of claim 9 , further comprising:

a first connecting portion connecting a sidewall of the first trench and a sidewall of the second trench; and

a second connecting portion connecting a sidewall of the third trench and the sidewall of the second trench,

wherein a width of the first connecting portion in the first direction is less than a width of the second connecting portion in the first direction.

11. The semiconductor device of claim 1 , wherein

the first fin-type pattern comprises a second short side, wherein the second short side is opposite to the first short side, and

a second sidewall of the first fin-type pattern that defines the second short side of the first fin-type pattern is defined by the second trench.

12. The semiconductor device of claim 1 , further comprising:

a third fin-type pattern comprising a third long side, wherein the third long side extends in the first direction, and a second short side, wherein the second short side extends in the second direction,

wherein the second short side of the third fin-type pattern is opposite to the first short side of the first fin-type pattern,

wherein at least part of a second sidewall of the third fin-type pattern that defines the second short side of the third fin-type pattern is defined by a third trench having a third depth, which is less than the second depth, and

wherein the third depth is substantially the same as the first depth.

13. The semiconductor device of claim 1 , further comprising:

a third fin-type pattern having a third long side, wherein the third long side extends in the first direction, and a second short side, wherein the second short side extends in the second direction,

wherein the second short side of the third fin-type pattern is opposite to the first short side of the first fin-type pattern, and

wherein a second sidewall of the third fin-type pattern that defines the second short side of the third fin-type pattern is defined by the second trench.