Buried word line of a dynamic random access memory and method for fabricating the same

1. A buried word line (BWL) of a dynamic random access memory (DRAM), comprising:

a trench in a substrate;

a doped region adjacent to two sides of the trench;

a gate structure in the trench, wherein the gate structure comprises:

a conductive layer in the trench;

a gate dielectric layer between the conductive layer and the substrate; and

a barrier structure between the gate structure and the doped region, wherein a topmost surface of the barrier structure is even with a topmost surface of the gate dielectric layer and the barrier structure and the gate dielectric layer comprise different heights.

2. The buried word line (BWL) of a dynamic random access memory (DRAM) of claim 1 , wherein a top surface of the barrier structure is higher than a bottom surface of the doped region and a bottom surface of the barrier structure is even with the bottom surface of the doped region.

3. The buried word line (BWL) of a dynamic random access memory (DRAM) of claim 1 , wherein a top surface of the barrier structure is higher than a bottom surface of the doped region and a bottom surface of the barrier structure is lower than the bottom surface of the doped region.

4. The buried word line (BWL) of a dynamic random access memory (DRAM) of claim 1 , wherein the barrier structure and the gate dielectric layer comprise same material.

5. The buried word line (BWL) of a dynamic random access memory (DRAM) of claim 1 , further comprising a hard mask on the gate structure.

6. The buried word line (BWL) of a dynamic random access memory (DRAM) of claim 1 , further comprising an air gap in the conductive layer.