Semiconductor devices
A semiconductor device including memory cell transistors on a substrate is provided. The semiconductor device includes a first wiring layer on the memory cell transistors and including a bit line and a first conductive pattern, a second wiring layer on the first wiring layer and including a ground line, a first via interposed between and electrically connecting the bit line and a source/drain of a first memory cell transistor among the memory cell transistors, and a first extended via interposed between the ground line and a source/drain of a second memory cell transistor among the memory cell transistors. The ground line is electrically connected to the source/drain of the second memory cell transistor through the first extended via and the first conductive pattern. The first extended via has a width greater than that of the first via.
1. A semiconductor device comprising:
a plurality of bit cells on a substrate, the plurality of bit cells comprising a first bit cell, a second bit cell, a third bit cell and a fourth bit cell,
wherein the first bit cell and the second bit cell are adjacent to each other in a first direction,
wherein the first bit cell and the third bit cell are adjacent to each other in a second direction crossing the first direction,
wherein the third bit cell and the fourth bit cell are adjacent to each other in the first direction,
wherein the second bit cell and the fourth bit cell are adjacent to each other in the second direction,
wherein each of the plurality of bit cells comprises a plurality of transistors, the plurality of transistors comprising:
a first access transistor and a second access transistor;
a first pull-up transistor and a second pull-up transistor; and
a first pull-down transistor and a second pull-down transistor,
wherein the first access transistor of the first bit cell and the first access transistor of the second bit cell are connected to a bit line through a first via,
wherein the second pull-down transistor of the first bit cell, the second pull-down transistor of the second bit cell, the second pull-down transistor of the third bit cell, the second pull-down transistor of the fourth bit cell are connected to a ground line through a first extended via, and
wherein the first extended via is wider than the first via.
2. The semiconductor device of claim 1 , wherein each of the plurality of transistors comprises:
an active pattern disposed on an upper portion of the substrate and having a fin shape;
a gate electrode running across the active pattern; and
source/drain patterns in the active pattern on opposite sides of the gate electrode.
3. The semiconductor device of claim 1 , wherein the second pull-down transistor of the first bit cell and the second pull-down transistor of the second bit cell have a common source/drain,
wherein the second pull-down transistor of the third bit cell and the second pull-down transistor of the fourth bit cell have a common source/drain,
wherein the common source/drains are electrically connected to each other through an active contact, and
wherein the active contact is provided beneath and in contact with the first extended via.
4. The semiconductor device of claim 1 , wherein a conductive pattern is interposed between the first extended via and the ground line,
wherein the conductive pattern is disposed at a same level as that of the bit line, and
wherein the ground line is positioned higher than the conductive pattern and the bit line.
5. The semiconductor device of claim 1 , wherein the first pull-up transistor of the first bit cell is connected to a power line through a second extended via, and
wherein the second extended via is wider than the first via.
6. A semiconductor device comprising:
a plurality of bit cells on a substrate, the plurality of bit cells comprising a first bit cell, a second bit cell, a third bit cell and a fourth bit cell,
wherein each of the plurality of bit cells comprises a plurality of transistors, the plurality of transistors comprising an access transistor and a pull-down transistor,
wherein the access transistor of the first bit cell and the access transistor of the second bit cell are connected to a bit line through a first via,
wherein the pull-down transistor of the first bit cell, the pull-down transistor of the second bit cell, the pull-down transistor of the third bit cell, the pull-down transistor of the fourth bit cell are connected to a ground line through a first extended via, and
wherein the first extended via is wider than the first via.
7. The semiconductor device of claim 6 , wherein each of the plurality of transistors comprises:
an active pattern disposed on an upper portion of the substrate and having a fin shape;
a gate electrode running across the active pattern; and
source/drain patterns in the active pattern on opposite sides of the gate electrode.
8. The semiconductor device of claim 6 , wherein the pull-down transistor of the first bit cell and the pull-down transistor of the second bit cell have a common source/drain,
wherein the pull-down transistor of the third bit cell and the pull-down transistor of the fourth bit cell have a common source/drain,
wherein the common source/drains are electrically connected to each other through an active contact, and
wherein the active contact is provided beneath and in contact with the first extended via.
9. The semiconductor device of claim 6 , wherein a conductive pattern is interposed between the first extended via and the ground line,
wherein the conductive pattern is disposed at a same level as that of the bit line, and
wherein the ground line is positioned higher than the conductive pattern and the bit line.
10. The semiconductor device of claim 6 , wherein the plurality of transistors of each of the plurality of bit cells further comprises a pull-up transistor,
wherein the pull-up transistor of the first bit cell is connected to a power line through a second extended via, and
wherein the second extended via is wider than the first via.