Atomic layer deposition of protective coatings for semiconductor process chamber components

1. A method comprising:

depositing a first film layer of yttrium oxide onto a surface of a chamber component for a processing chamber using a first number of repetitions of an atomic layer deposition process, wherein the first film layer has a thickness ranging from two monolayers to about 1 micrometer;

depositing a second film layer of zirconium oxide onto the surface of the chamber component using a second number of repetitions of the atomic layer deposition process, wherein the second film layer has a thickness ranging from two monolayers to about 1 micrometer;

depositing a third film layer of a fluoride onto the surface of the chamber component using a third number of repetitions of the atomic layer deposition process, wherein the third film layer has a thickness ranging from two monolayers to about 1 micrometer;

annealing the chamber component comprising the first film layer, the second film layer and third film layer to cause the first film layer, the second film layer and the third film layer to interdiffuse and form a corrosion and erosion resistant coating comprising a homogenous interdiffused YZr x O y F z solid state phase, wherein x, y and z have values that are based on the first number of repetitions of the atomic layer deposition process that are used to deposit the first film layer, the second number of repetitions of the atomic layer deposition process that are used to deposit the second film layer, and the third number of repetitions of the atomic layer deposition process that are used to deposit the third film layer.

2. The method of claim 1 , wherein the first film layer is deposited prior to deposition of the second film layer, and wherein the second film layer is deposited over the first film layer.

3. The method of claim 1 , wherein a precursor used to deposit the first film layer comprises at least one of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadienyl)yttrium(III), or tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III), and wherein a reactant used to deposit the first film layer comprises at least one of H 2 O, O 2 , or O 3 .

4. The method of claim 1 , wherein a precursor used to deposit the second film layer comprises at least one of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), or tetrakis(ethylmethylamido)zirconium (IV), and wherein a reactant used to deposit the second film layer comprises at least one of H 2 O, O 2 , or O 3 .

5. The method of claim 1 , further comprising:

alternately depositing one of a first plurality of additional film layers of yttrium oxide onto the surface of the chamber component one of a second plurality of additional film layers of zirconium oxide onto the surface of the chamber component, and one of a third plurality of additional film layers of the fluoride until a combined thickness of the first film layer, the second film layer, the third film layer, the first plurality of additional film layers, the second plurality of additional film layers, and the third plurality of additional film layers reaches a target thickness.

6. The method of claim 1 , wherein the first film layer has a different thickness than the second film layer.

7. The method of claim 1 , wherein the first film layer, the second film layer and the third film layer each has a uniform thickness.

8. The method of claim 1 , wherein the corrosion and erosion resistant coating is deposited directly on the surface of the chamber component.

9. The method of claim 8 , wherein the corrosion and erosion resistant coating has a discrete boundary with the surface of the chamber component.

10. The method of claim 1 , wherein the annealing is performed at a temperature ranging from 800° C. to 900° C.