Image sensor and manufacturing method thereof
An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.
1. An image sensor, comprising:
a substrate;
a patterned electrode layer disposed on the substrate and comprising a plurality of electrode blocks separated from one another;
a pixel isolation structure disposed on the substrate and comprising a metal halide; and
a patterned photo-electric conversion layer disposed on the plurality of electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the plurality of electrode blocks, wherein the plurality of photo-electric conversion blocks comprise a perovskite material and are separated from one another by the pixel isolation structure,
wherein a top surface of the patterned photo-electric conversion layer is located higher than a top surface of the pixel isolation structure;
wherein the perovskite material is represented by a formula as follows: (AMX 3 ) 1-n (B 2 MX 4 ) n , wherein “A” denotes a positive monovalent metal cation or a positive monovalent organic cation and “B” denotes an R1-NH 3 cation, wherein R1 is an alkyl group having 4-18 carbon atoms, “M” denotes a positive bivalent metal cation, “X” denotes a halogen, and n=0-1.
2. The image sensor according to claim 1 , wherein the metal halide is represented by a formula as follows: (MX 2 ) a (AMX 3 ) b (B 2 MX 4 ) c , wherein “A” denotes a positive monovalent metal cation or a positive monovalent organic cation and “B” denotes an R1-NH 3 cation, wherein R1 is an alkyl group having 4-18 carbon atoms, “M” denotes a positive bivalent metal cation, “X” denotes a halogen, and a>b+c.
3. The image sensor according to claim 1 , further comprising:
a metal halide film disposed on the plurality of photo-electric conversion blocks and interposed between the plurality of photo-electric conversion blocks and the plurality of electrode blocks, wherein the metal halide film has a thickness smaller than 10 nm.
4. The image sensor according to claim 1 , further comprising:
a first buffer layer disposed on the patterned electrode layer, wherein the patterned photo-electric conversion layer is disposed on the first buffer layer;
a second buffer layer disposed on the patterned photo-electric conversion layer; and
an electrode layer disposed on the second buffer layer.
5. The image sensor according to claim 4 , further comprising:
a planarization layer disposed on the electrode layer;
a color filter layer disposed on the planarization layer; and
a lens layer disposed on the color filter layer.
6. The image sensor according to claim 1 , wherein the substrate comprises a pixel sensing circuit.
7. The image sensor according to claim 1 , wherein the plurality of electrode blocks are embedded on the substrate.
8. The image sensor according to claim 1 , wherein a top surface of the plurality of electrode blocks and a top surface of the substrate are coplanar.