Device and method for alignment of vertically stacked wafers and die
A device is provided that includes a first die having a first alignment structure that includes a plurality of first transmission columns arranged in a pattern and a second die positioned on the first die, the second die having a second alignment structure that includes a plurality of second transmission columns arranged in the same pattern as the first transmission columns. The first and second transmission columns are each coplanar with a first surface and a second surface of the first and second die, respectively.
1. A system, comprising:
a first wafer that includes a plurality of first alignment structures, each first alignment structure including a discrete base and a plurality of discrete transmission columns arranged in a first pattern, each transmission column extending through the first wafer and exposed from a first surface of the first wafer and attached to the discrete base that is adjacent to a second surface of the first wafer, the first surface and the second surface opposite to one another, the plurality of discrete transmission columns and the discrete connection base of the first alignment structure being of a same material;
a second wafer that includes a plurality of second alignment structures, each second alignment structure including a plurality of transmission columns, each second alignment structure aligned with a respective one of the first alignment structures via the discrete base of the first alignment structure and directly contacting the discrete base of the first alignment structure, each plurality of transmission columns of each second alignment structure being arranged in the respective first pattern of the corresponding first alignment structures, each transmission column extending through the second wafer.
2. The system of claim 1 wherein each second alignment structure includes a discrete base on a first surface of the second wafer, the discrete base of the second alignment structure being coupled to each transmission column of the respective second alignment structure, each transmission column of the second alignment structure extending from the discrete base to a second surface of the second wafer.
3. The system of claim 2 wherein the discrete base of the first alignment structure is non-rectangular.
4. The system of claim 1 wherein the each of the first alignment structures is in a kerf region between adjacent die of the first wafer.
5. The system of claim 1 wherein the discrete base of the first alignment structure includes a shape that corresponds to an area of the first surface that corresponds to an outer edge of the plurality of transmission columns.
6. A device, comprising:
a first wafer including:
a discrete connection base; and
a first plurality of transmission columns arranged in a first pattern, the first plurality of transmission columns of the first pattern being exposed from a first surface of the first wafer within a first area with an irregular boundary, and each transmission column of the first plurality of transmission columns extending through the first wafer and in contact with the discrete connection base, the discrete connection base adjacent to a second surface of the first wafer, the discrete connection base and the first plurality of transmission columns being a same material;
a second wafer on the first wafer, the second wafer including:
a second plurality of transmission columns arranged in a second pattern and adjacent to a first surface of the second wafer with a second area with an irregular boundary, each transmission column of the second plurality of transmission columns being optically coupled to a respective one of the first plurality of transmission columns of the first wafer via the connection base of the first wafer.
7. The device of claim 6 wherein the first discrete connection base is exposed from the second surface of the wafer.
8. The device of claim 6 wherein the second wafer includes a second discrete connection base coupled to the second plurality of transmission columns.
9. The device of claim 8 wherein the first and second connection base are spaced from each other by the first wafer.
10. The device of claim 8 wherein the first and second connection bases have substantially the same area.
11. The device of claim 10 wherein the area of the first and second connection base corresponds to the first area with the irregular boundary.
12. The system of claim 1 , wherein the discrete base and the plurality of discrete transmission columns of the first alignment structure are of a same material.