Display device having multiple buffer layers
Disclosed is a display device with high resolution. The display device includes a substrate, a plurality of signal lines on the substrate, multiple buffer layers including at least one organic buffer layer and at least one inorganic buffer layer, and at least one transistor that overlaps one or more of the plurality of signal lines, with the multiple buffer layers interposed therebetween. Accordingly, it may be possible to ensure a sufficient process margin and consequently to realize a high resolution and improve production yield.
1. A display device comprising:
a substrate;
a plurality of signal lines on the substrate;
at least one transistor that overlaps one or more of the plurality of signal lines;
multiple buffer layers disposed below an active layer of the transistor, wherein the multiple buffer layers include at least one organic buffer layer and a plurality of inorganic buffer layers; and
a plurality of open holes that penetrate the at least one organic buffer layer below the active layer of the transistor,
wherein one or more of the plurality of signal lines is between the substrate and the multiple buffer layers disposed below the active layer of the transistor, and
wherein the at least one organic buffer layer is disposed among the plurality of inorganic buffer layers.
2. The display device according to claim 1 , further comprising:
a storage capacitor including at least three storage electrodes that overlap each other, with at least one of the plurality of inorganic buffer layers interposed therebetween.
3. The display device according to claim 2 , wherein:
the plurality of inorganic buffer layers include a first inorganic buffer layer, a second inorganic buffer layer, and a third inorganic buffer layer; and
the first inorganic buffer layer, the second inorganic buffer layer, the at least one organic buffer layer, and the third inorganic buffer layer are sequentially arranged between the substrate and the active layer of the transistor.
4. The display device according to claim 3 , wherein the third inorganic buffer layer is on the at least one organic buffer layer and has a same line width and a same shape as the organic buffer layer.
5. The display device according to claim 4 , wherein the storage capacitor includes:
a first storage electrode between the substrate and the first inorganic buffer layer;
a second storage electrode on the first inorganic buffer layer; and
a third storage electrode on the second inorganic buffer layer.
6. The display device according to claim 5 , wherein:
each of the first storage electrode, the second storage electrode, and the third storage electrode has a first side portion on a same side and an opposite side portion on another side which is opposite to the same side in a width direction;
the first side portion of the second storage electrode protrudes in the width direction further than the first side portion of the third storage electrode; and
the opposite side portion of each of the first storage electrode and the third storage electrode protrudes in the width direction further than the opposite side portion of the second storage electrode.
7. The display device according to claim 6 , wherein the opposite side portion of the first storage electrode protrudes in the width direction further than the opposite side portion of the third storage electrode.
8. The display device according to claim 6 , further comprising:
a first storage contact hole that penetrates the first inorganic buffer layer and the second inorganic buffer layer to expose the first storage electrode and the third storage electrode; and
a second storage contact hole that penetrates the second inorganic buffer layer to expose the second storage electrode.
9. The display device according to claim 8 , wherein:
the first storage electrode is on a same layer as the one of the plurality of signal lines that is between the substrate and the multiple buffer layers disposed below an active layer of the transistor;
the first storage electrode and the one of the plurality of the signal lines are both formed of an opaque metal and are both between the substrate and the multiple buffer layers disposed below the active layer of the transistor; and
the third storage electrode is formed of a same material as the active layer of the transistor.
10. The display device according to claim 8 , further comprising:
a light-emitting diode connected to the at least one transistor.
11. The display device according to claim 10 , wherein the at least one transistor includes:
a driving transistor connected to the light-emitting diode, the driving transistor including a drain electrode connected to the first storage electrode and the third storage electrode through the first storage contact hole; and
a switching transistor connected to the driving transistor, the switching transistor including a drain electrode connected to the second storage electrode through the second storage contact hole.
12. The display device according to claim 11 , wherein:
the first storage electrode is on a same layer as one of the plurality of signal lines and formed of a same material as the one of the plurality of signal lines; and
the third storage electrode is formed of a same material as the active layer of the driving transistor.
13. The display device according to claim 2 , wherein the plurality of signal lines include:
a low-voltage supply line connected to a light-emitting diode; and
a high-voltage supply line and a data line both arranged parallel to the low-voltage supply line,
wherein at least one of the low-voltage supply line, the high-voltage supply, line and the storage capacitor overlaps the data line, with the multiple buffer layers interposed therebetween.
14. The display device according to claim 11 , wherein the plurality of signal lines include:
a low-voltage supply line connected to the light-emitting diode; and
a high-voltage supply line arranged parallel to the low-voltage supply line,
wherein at least one of the switching transistor and the driving transistor overlaps one of the low-voltage supply line, the high-voltage supply line and the storage capacitor, with the multiple buffer layers interposed therebetween.
15. The display device according to claim 13 , further comprising:
a reference line on the substrate parallel to the data line; and
a sensing transistor connected to the reference line,
wherein the reference line overlaps the data line, with the multiple buffer layers interposed therebetween.
16. The display device according to claim 14 , further comprising:
a reference line on the substrate; and
a sensing transistor connected to the reference line,
wherein the reference line overlaps at least one of the switching transistor and the driving transistor, with the multiple buffer layers interposed therebetween.
17. The display device according to claim 1 , wherein a dielectric constant or a thickness of the organic buffer layer is configured to decrease signal interference between a component above the multiple buffer layers and a component below the multiple buffer layers.
18. The display device according to claim 1 , wherein the display device is an organic light-emitting display device or a liquid crystal display device.
19. The display device according to claim 2 , wherein the at least one organic buffer layer disposed below the active layer of the transistor overlaps the transistor, and does not overlap the storage capacitor.
20. The display device according to claim 10 , wherein one of the plurality of open holes overlaps the light-emitting diode.
21. The display device according to claim 1 , further comprising:
an interlayer insulation film that is in contact with lateral surfaces of the at least one organic buffer layer exposed through the plurality of open holes.