Integrated photodetector with direct binning pixel
An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.
1. An integrated circuit, comprising:
a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;
at least one charge carrier storage region; and
a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced,
wherein the photodetection region is formed in a semiconductor substrate, and wherein charge carriers deeper than one micron below a surface of the semiconductor substrate are rejected.
2. The integrated circuit of claim 1 , further comprising a direct binning pixel, the direct binning pixel comprising the photodetection region, the at least one charge carrier storage region and the charge carrier segregation structure.
3. The integrated circuit of claim 2 , wherein the integrated circuit comprises a plurality of direct binning pixels.
4. The integrated circuit of claim 1 , wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions, and the charge carrier segregation structure is configured to aggregate, in the plurality of charge carrier storage regions, charge carriers produced in a plurality of measurement periods.
5. The integrated circuit of claim 1 , wherein the charge carrier segregation structure comprises at least one electrode at a boundary between the photodetection region and a first charge carrier storage region of the at least one charge carrier storage region.
6. The integrated circuit of claim 5 , wherein the charge carrier segregation structure comprises a single electrode at the boundary between the photodetection region and the first charge carrier storage region.
7. The integrated circuit of claim 1 , wherein no charge carrier capture region is present between the photodetection region and a charge carrier storage region of the at least one charge carrier storage region.
8. The integrated circuit of claim 1 , wherein charge carriers are transferred to the at least one charge carrier storage region without capturing the charge carriers between the photodetection region and the at least one charge carrier storage region.
9. The integrated circuit of claim 1 , further comprising a charge carrier rejection region that discards, during a rejection period, charge carriers produced in the photodetection region.
10. The integrated circuit of claim 9 , wherein the discarded charge carriers are removed from the photodetection region in a different direction from a direction in which charge carriers are directed from the photodetection region toward a charge carrier storage region.
11. The integrated circuit of claim 9 , wherein the charge carrier rejection region discards charge carriers produced in the photodetection region during a rejection period by changing a voltage of an electrode at a boundary between the photodetection region and the charge carrier rejection region.
12. The integrated circuit of claim 1 , wherein single photons are transferred to the at least one charge carrier storage region and aggregated in the at least one charge carrier storage region.
13. The integrated circuit of claim 1 , wherein charge carriers deeper than one micron below the surface of the semiconductor substrate are rejected at least partially by an implant below a photodiode of the photodetection region.
14. The integrated circuit of claim 13 , wherein the implant provides a deep shield or a deep drain.
15. The integrated circuit of claim 14 , wherein the implant is N-type or P+-type.
16. The integrated circuit of claim 1 , wherein charge carriers deeper than one micron below the surface of the semiconductor substrate are rejected by a drift field below the surface of the semiconductor substrate.
17. The integrated circuit of claim 1 , wherein the photodetection region is formed in an epitaxial region that is less than two microns deep.
18. The integrated circuit of claim 1 , wherein the photodetection region is an epitaxial region comprising a photodiode.
19. The integrated circuit of claim 1 , wherein the at least one charge carrier storage region comprises a plurality of charge carrier storage regions.
20. A photodetection method, comprising:
(A) receiving incident photons at a photodetection region; and
(B) selectively directing charge carriers of a plurality of charge carriers produced in response to the incident photons directly from the photodetection region into at least one charge carrier storage region based upon times at which the charge carriers are produced,
wherein a charge carrier in the photodetection region is transferred to a rejection region during a rejection period, then a first potential barrier to a first charge carrier storage region is lowered, then a second potential barrier to a second charge carrier storage region is lowered.
21. The photodetection method of claim 20 , wherein the first potential barrier is controlled by a first electrode and the second potential barrier is controlled by a second electrode.