Light emitting diode and fabrication method thereof
View Patent ↗A light-emitting diode chip includes a first semiconductor layer, a second semiconductor layer and an active layer between them; an dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer; a metal conductive layer over the lower surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic contact with the light-emitting epitaxial laminated layer; a conductive substrate over the lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the conductive through-hole array and the finger-shape electrode, which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.
1. A fabrication method of a light-emitting diode, comprising:
1) providing a light-emitting epitaxial laminated layer having an upper surface and an opposing lower surface, including a first semiconductor layer, a second semiconductor layer and an active therebetween;
2) fabricating a dielectric layer having a conductive through-hole array comprising a plurality of uniformly-distributed conductive through-holes over the lower surface of the light-emitting epitaxial laminated layer;
3) fabricating a metal conductive layer over a lower surface of the dielectric layer and filling up the plurality of uniformly-distributed conductive through-holes, forming ohmic-contact with the light-emitting epitaxial laminated layer;
4) providing a conductive substrate and connecting the conductive substrate to the metal conductive layer for supporting the light-emitting epitaxial laminated layer; and
5) forming a first electrode comprising a bonding pad electrode and a finger-shaped electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the finger-shaped electrode and the conductive through-hole array formed in step 2), wherein the rotation angle is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.
2. The fabrication method of claim 1 , wherein, step 2) further comprises:
covering a dielectric layer over the lower surface of the light-emitting epitaxial laminated layer;
providing a photomask plate with a photomask pattern array, wherein, the photomask pattern array is parallel with the photomask plate edge;
aligning the photomask plate with the dielectric layer; and
rotating the light-emitting epitaxial laminated layer with the dielectric layer to form the rotation angle with the photomask plate for exposure.
3. The fabrication method of claim 1 , wherein, step 2) further comprises:
covering a dielectric layer over the lower surface of the light-emitting epitaxial laminated layer;
providing a photomask plate with a photomask pattern array, wherein, the photomask pattern array is parallel with the photomask plate edge;
aligning the photomask plate with the dielectric layer; and
rotating the photomask plate to form the rotation angle with the dielectric layer for exposure.
4. The fabrication method of claim 1 , wherein, step 2) further comprises:
covering a dielectric layer over the lower surface of the light-emitting epitaxial laminated layer;
providing a photomask plate with a photomask pattern array, wherein, the rotation angle is formed between the photomask pattern array and the photomask plate edge;
aligning the photomask plate with the dielectric layer for exposure.
5. The fabrication method of claim 1 , wherein, a center of the finger-shape electrode aligns with that of the conductive through-hole array.
6. The fabrication method of claim 1 , wherein, the finger-shape electrode is a central symmetric pattern.
7. The fabrication method of claim 1 , wherein, the preferred number enables a maximum value of LOP.
8. The fabrication method of claim 1 , wherein, the preferred number enables a minimum value of V F .
9. The fabrication method of claim 1 , wherein, the preferred number is the maximum number.
10. The fabrication method of claim 1 , wherein, the rotation angle is about 23°.
11. The fabrication method of claim 1 , wherein, the rotation angle is 10°-30°.
12. A light-emitting diode, comprising:
a light-emitting epitaxial laminated layer having an upper surface and an opposing lower surface, including: a first semiconductor layer, a second semiconductor layer, and an active layer therebetween;
a dielectric layer having a conductive through-hole array comprising a plurality of uniformly-distributed conductive through-holes over the lower surface of the light-emitting epitaxial laminated layer;
a metal conductive layer over a lower surface of the dielectric layer and filling up the plurality of uniformly-distributed conductive through-holes, forming ohmic-contact with the light-emitting epitaxial laminated layer;
a conductive substrate over a lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; and
a first electrode comprising a bonding pad electrode and a finger-shaped electrode over the upper surface of the light-emitting epitaxial laminated layer;
wherein, a rotation angle is formed between the conductive through-hole array and the finger-shaped electrode, wherein the rotation angle is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.
13. The light-emitting diode of claim 12 , wherein, a center of the finger-shape electrode aligns with that of the conductive through-hole array.
14. The light-emitting diode of claim 12 , wherein, the finger-shape electrode is a central symmetric pattern.
15. The light-emitting diode of claim 12 , wherein, the preferred number enables a maximum value of LOP.
16. The light-emitting diode of claim 12 , wherein, the preferred number enables a minimum value of V F .
17. The light-emitting diode of claim 12 , wherein, the preferred number is a maximum number.
18. The light-emitting diode of claim 12 , wherein, the rotation angle is 10°-30°.
19. The light-emitting diode of claim 18 , wherein: the rotation angle is about 23°.
20. A light-emitting system comprising a plurality of light-emitting diodes, each light-emitting diode including:
a light-emitting epitaxial laminated layer having an upper surface and an opposing lower surface, including: a first semiconductor layer, a second semiconductor layer, and an active layer therebetween;
a dielectric layer having a conductive through-hole array comprising a plurality of uniformly-distributed conductive through-holes over the lower surface of the light-emitting epitaxial laminated layer;
a metal conductive layer over a lower surface of the dielectric layer and filling up the plurality of uniformly-distributed conductive through-holes, forming ohmic-contact with the light-emitting epitaxial laminated layer;
a conductive substrate over a lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; and
a first electrode comprising a bonding pad electrode and a finger-shaped electrode over the upper surface of the light-emitting epitaxial laminated layer;
wherein, a rotation angle is formed between the conductive through-hole array and the finger-shaped electrode, wherein the rotation angle is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.