Light-emitting element
A light-emitting element includes: a semiconductor structure; light-reflecting electrodes; a first insulating film having: one or more first n-side openings and one or more first p-side openings; one or more interconnect electrodes on an upper surface of the first insulating film; a first electrode on the upper surface of the first insulating film; a second electrode on the upper surface of the first insulating film; a second insulating film having: one or more second n-side openings and one or more second p-side openings; a first external connection portion; and a second external connection portion.
1. A light-emitting element comprising:
an insulating substrate;
a semiconductor structure comprising:
an n-type semiconductor layer disposed on an upper surface of the substrate,
an active layer disposed in a region of an upper surface of the n-type semiconductor layer other than one or more predetermined regions thereof, and
a p-type semiconductor layer disposed on an upper surface of the active layer;
a light-reflecting electrode disposed on an upper surface of the p-type semiconductor layer of the semiconductor structure;
a first insulating film made of an inorganic material and covering the plurality of semiconductor structures, the first insulating film having:
one or more first n-side openings, each of which is located above a respective one of the one or more predetermined regions of the upper surface of the n-type semiconductor layer of the semiconductor structure, and
one or more first p-side openings, each of which is located above the light-reflecting electrode;
a first electrode disposed on the upper surface of the first insulating film and connected, through a respective one of the one or more first n-side opening, to the n-type semiconductor layer of the semiconductor structure;
a second electrode disposed on the upper surface of the first insulating film and connected, through a respective one of the one or more first p-side openings, to the light-reflecting electrode;
a second insulating film made of an inorganic material, the second insulating film having:
one or more second n-side openings located above the first electrode, and
one or more second p-side openings located above the second electrode;
a first external connection portion disposed on an upper surface of the second insulating film in a region other than the one or more predetermined regions of the semiconductor structure in a top view, and connected to the first electrode through each of the one or more second n-side openings; and
a second external connection portion disposed on the upper surface of the second insulating film in a region other than the one or more predetermined regions of the semiconductor structure in a top view, and connected to the second electrode through each of the one or more second p-side openings.
2. The light-emitting element according to claim 1 , wherein:
in a top view:
each of the first external connection portion and the second external connection portion includes a plurality of recesses recessed inward from a periphery thereof; and
each of the one or more predetermined regions is located in a corresponding one of the plurality of recesses of each of the first external connection portion and the second external connection portion.
3. The light-emitting element according to claim 2 , wherein:
in a top view:
the first external connection portion and the second external connection portion face each other; and
the plurality of recesses include two recesses formed at opposite corners of the first external connection portion and two recesses formed at opposite corners of the second external connection portion, the two recesses at the opposite corners of the first external connection portion face the two recesses at the opposite corners of the second external connection portion.
4. The light-emitting element according to claim 1 , wherein the first insulating film and the second insulating film are made of SiO 2 .
5. The light-emitting element according to claim 1 , wherein the light-reflecting electrode is made of Ag, Al, or an alloy thereof.
6. A light-emitting element comprising:
an insulating substrate;
a plurality of semiconductor structures, each of which comprises:
an n-type semiconductor layer disposed on an upper surface of the substrate,
an active layer disposed in a region of an upper surface of the n-type semiconductor layer other than one or more predetermined regions thereof, and
a p-type semiconductor layer disposed on an upper surface of the active layer;
a plurality of light-reflecting electrodes, each of which is disposed on an upper surface of the p-type semiconductor layer of a respective one of the plurality of semiconductor structures;
a first insulating film made of an inorganic material and covering the plurality of semiconductor structures, the first insulating film having:
one or more first n-side openings, each of which is located above a respective one of the one or more predetermined regions of the upper surface of the n-type semiconductor layer of a respective one of the plurality of semiconductor structures, and
one or more first p-side openings, each of which is located above a respective one of the light-reflecting electrodes;
one or more interconnect electrodes disposed on an upper surface of the first insulating film, each of the one or more interconnect electrodes connected to the n-type semiconductor layer of a first of two adjacent ones of the plurality of semiconductor structures through a respective one of the one or more first n-side openings, and connected to a respective one of the light-reflecting electrodes of a second of the two adjacent ones of the semiconductor structures through a respective one of the one or more first p-side openings;
a first electrode disposed on the upper surface of the first insulating film and connected, through a respective one of the one or more first n-side openings, to the n-type semiconductor layer of one of the plurality of semiconductor structures on which a respective one of the light-reflecting electrodes is connected to a respective one of the interconnect electrodes;
a second electrode disposed on the upper surface of the first insulating film and connected, through a respective one of the one or more first p-side openings, to the light-reflecting electrode of one of the plurality of semiconductor structures in which the n-type semiconductor layer is connected to a respective one of the interconnect electrodes;
a second insulating film made of an inorganic material, the second insulating film having:
one or more second n-side openings located above the first electrode, and
one or more second p-side openings located above the second electrode;
a first external connection portion disposed on an upper surface of the second insulating film in a region other than the one or more predetermined regions of each of the semiconductor structures in a top view, and connected to the first electrode through each of the one or more second n-side openings; and
a second external connection portion disposed on the upper surface of the second insulating film in a region other than the one or more predetermined regions of each of the semiconductor structures in a top view, and connected to the second electrode through each of the one or more second p-side openings.
7. The light-emitting element according to claim 6 , wherein each of the first external connection portion and the second external connection portion are disposed so as to extend over two or more of the semiconductor structures.
8. The light-emitting element according to claim 7 , wherein:
in a top view:
each of the first external connection portion and the second external connection portion includes a plurality of recesses recessed inward from a periphery thereof; and
each of the one or more predetermined regions is located in a corresponding one of the plurality of recesses of each of the first external connection portion and the second external connection portion.
9. The light-emitting element according to claim 8 , wherein:
in a top view:
the first external connection portion and the second external connection portion face each other; and
the plurality of recesses include two recesses formed at opposite corners of the first external connection portion and two recesses formed at opposite corners of the second external connection portion, the two recesses at the opposite corners of the first external connection portion face the two recesses at the opposite corners of the second external connection portion.
10. The light-emitting element according to claim 7 , wherein the first insulating film and the second insulating film are made of SiO 2 .
11. The light-emitting element according to claim 6 , wherein:
in a top view:
each of the first external connection portion and the second external connection portion includes a plurality of recesses recessed inward from a periphery thereof; and
each of the one or more predetermined regions is located in a corresponding one of the plurality of recesses of each of the first external connection portion and the second external connection portion.
12. The light-emitting element according to claim 11 , wherein:
in a top view:
the first external connection portion and the second external connection portion face each other; and
the plurality of recesses include two recesses formed at opposite corners of the first external connection portion and two recesses formed at opposite corners of the second external connection portion, the two recesses at the opposite corners of the first external connection portion face the two recesses at the opposite corners of the second external connection portion.
13. The light-emitting element according to claim 12 , wherein the first insulating film and the second insulating film are made of SiO 2 .
14. The light-emitting element according to claim 6 , wherein the first insulating film and the second insulating film are made of SiO 2 .
15. The light-emitting element according to claim 6 , wherein the interconnect electrode is made of Ag, Al, or an alloy thereof.
16. The light-emitting element according to claim 6 , wherein the light-reflecting electrode is made of Ag, Al, or an alloy thereof.