Method of fabricating STI trench
A method of fabricating an STI trench includes providing a substrate. Later, a first mask is formed to cover the substrate. The first mask includes numerous sub-masks. A first trench is disposed between each sub-mask. Subsequently, a protective layer is formed to fill up the first trench. Then, a second mask is formed to cover the first mask. The second mask includes an opening. The sub-mask directly disposed under the opening is defined as a joint STI pattern. After that, the joint STI pattern is removed to transform the first mask into a third mask. Later, the second mask is removed followed by removing the protective layer. Finally, part of the substrate is removed by taking the third mask as a mask to form numerous STI trenches.
1. A method of fabricating a shallow trench isolation (hereafter abbreviated as STI) trench, comprising:
providing a substrate;
forming a first mask covering the substrate, and the first mask comprising a plurality of sub-masks, wherein a first trench is disposed between the sub-masks adjacent to each other;
forming a protective layer filling up the first trench;
forming a second mask covering the first mask, and the second mask comprising an opening, wherein one of the sub-masks directly under the opening is defined as a joint STI pattern;
removing the joint STI pattern to transform the first mask into a third mask by taking the second mask as a first protective mask;
removing the second mask;
removing the protective layer; and
removing part of the substrate to form a plurality of STI trenches by taking the third mask as a second protective mask.
2. The method of fabricating an STI trench of claim 1 , wherein the first mask comprises a first material, the protective layer comprises a second material, the first material has a high etching selectivity ratio relative to the second material with respective to a predetermined etchant.
3. The method of fabricating an STI trench of claim 2 , wherein the first material comprises silicon nitride, the protective layer comprises silicon oxide, and the predetermined etchant comprises fluorine-containing gas.
4. The method of fabricating an STI trench of claim 1 , further comprising while removing the joint STI pattern, removing part of the protective layer adjacent to the joint STI pattern.
5. The method of fabricating an STI trench of claim 1 , wherein a sidewall of the opening is aligned with a sidewall of the joint STI pattern.
6. The method of fabricating an STI trench of claim 1 , wherein a sidewall of the opening is aligned with the protective layer adjacent to the joint STI pattern.
7. The method of fabricating an STI trench of claim 1 , further comprising:
after forming the STI trenches, removing the third mask; and
forming an insulating layer filling into the STI trenches.