Method for treating pattern structure, method for manufacturing electronic device, and treatment liquid for inhibiting collapse of pattern structure
Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.
1. A method for treating a pattern structure, comprising:
applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to the pattern structure formed of an inorganic material, wherein the fluorine-based polymer includes a fluoroalkyl (meth)acrylate polymer, and the fluoroalkyl (meth)acrylate polymer has a repeating unit derived from a polymerizable compound having a cationic group.
2. The method for treating a pattern structure according to claim 1 , wherein the treatment liquid includes water.
3. The method for treating a pattern structure according to claim 1 , wherein the pattern structure includes at least one selected from the group consisting of Si, SiO 2 , SiN, Ge, and SiGe.
4. The method for treating a pattern structure according to claim 1 , wherein the pattern structure includes all of Si, SiO 2 , and SiN.
5. The method for treating a pattern structure according to claim 1 , wherein the treatment liquid has a pH of 11 or less.
6. The method for treating a pattern structure according to claim 1 , wherein the treatment liquid has a pH of 4 or more and 11 or less.
7. The method for treating a pattern structure according to claim 1 , wherein the treatment liquid further contains a buffer.
8. The method for treating a pattern structure according to claim 1 , wherein a rinsing liquid containing an organic solvent is applied to the pattern structure to which the treatment liquid has been applied.
9. A method for manufacturing an electronic device, comprising:
the method for treating a pattern structure according to claim 1 .
10. A treatment liquid for inhibiting collapse of a pattern structure, comprising:
a fluorine-based polymer having a repeating unit containing a fluorine atom, wherein the treatment liquid is applied to the pattern structure formed of an inorganic material, the fluorine-based polymer includes a fluoroalkyl (meth)acrylate polymer and the fluorine-based polymer has a repeating unit derived from a polymerizable compound having a cationic group.
11. The treatment liquid for inhibiting collapse of a pattern structure according to claim 10 , further comprising:
water.
12. The treatment liquid for inhibiting collapse of a pattern structure according to claim 10 , wherein the pattern structure includes at least one selected from the group consisting of Si, SiO 2 , SiN, Ge, and SiGe.
13. The treatment liquid for inhibiting collapse of a pattern structure according to claim 10 , wherein the pattern structure includes all of Si, SiO 2 , and SiN.
14. The treatment liquid for inhibiting collapse of a pattern structure according to claim 10 , wherein the treatment liquid has a pH of 11 or less.
15. The treatment liquid for inhibiting collapse of a pattern structure according to claim 10 , wherein the treatment liquid has a pH of 4 or more and 11 or less.
16. The treatment liquid for inhibiting collapse of a pattern structure according to claim 10 , further comprising:
a buffer.
17. A treatment liquid for inhibiting collapse of a pattern structure, comprising:
a fluorine-based polymer having a repeating unit containing a fluorine atom, wherein the treatment liquid is applied to the pattern structure formed of an inorganic material, and
wherein the treatment liquid contains an alkanol having a surface tension of 30 mN/m or less, the fluorine-based polymer includes a fluoroalkyl (meth)acrylate polymer, and the fluoroalkyl (meth)acrylate polymer has a repeating unit derived from a polymerizable compound having a cationic group.
18. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , further comprising:
water.
19. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , wherein the pattern structure includes at least one selected from the group consisting of Si, SiO 2 , SiN, Ge, and SiGe.
20. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 wherein the pattern structure includes all of Si, SiO 2 , and SiN.
21. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , wherein the treatment liquid has a pH of 11 or less.
22. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , wherein the treatment liquid has a pH of 4 or more and 11 or less.
23. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , further comprising:
a buffer.
24. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , wherein the alkanol is 2-propanol.
25. The treatment liquid for inhibiting collapse of a pattern structure according to claim 17 , wherein the content of the alkanol is 0.1 to 80 mass % in the treatment liquid.