Gas sensor and method of using the same
A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.
1. A gas sensor comprising:
a semiconductor layer;
a graphene film provided above the semiconductor layer having at least a portion in contact with gas;
a barrier film between the semiconductor layer and the graphene film;
a pair of impurity conductive regions formed on both sides of the barrier film on the surface of the semiconductor layer by implantating ion into the semiconductor layer; and
an interlayer insulating film covering the barrier film, wherein:
the graphene film is provided on the interlayer insulating film; and
the graphene film is in electrical contact with the barrier film through a conductive layer in the interlayer insulating film.
2. The gas sensor according to claim 1 , wherein the graphene film is in contact with the barrier film.
3. The gas sensor according to claim 1 , further comprising nanoparticles on the graphene film.
4. The gas sensor according to claim 1 , wherein a material of the semiconductor layer is a group IV semiconductor, a group III-V semiconductor, a group II-VI semiconductor, an oxide semiconductor, an organic semiconductor, a metal chalcogenide-based semiconductor, a laminar substance semiconductor, a semiconducting carbon nanotube, or a graphene nanoribbon.
5. The gas sensor according to claim 1 , wherein a material of the barrier film is a silicon oxide, a silicon nitride, a silicon oxynitride, a germanium oxide, a high dielectric constant insulator, or a laminar insulator.
6. The gas sensor according to claim 1 , wherein:
a material of the semiconductor layer is a first compound semiconductor;
a material of the barrier film is a second compound semiconductor; and
a band gap of the second compound semiconductor is wider than a band gap of the first compound semiconductor.
7. A method of using a gas sensor, comprising:
detecting a physical amount corresponding to a variation amount in work function of a graphene film using a gas sensor,
the gas sensor comprising:
a semiconductor layer;
a graphene film provided above the semiconductor layer having at least a portion in contact with gas;
a barrier film between the semiconductor layer and the graphene film;
a pair of impurity conductive regions formed on both sides of the barrier film on the surface of the semiconductor layer by implantating ion into the semiconductor layer; and
an interlayer insulating film covering the barrier film, wherein:
the graphene film is provided on the interlayer insulating film; and
the graphene film is in electrical contact with the barrier film through a conductive layer in the interlayer insulating film.