Electronic device including a transistor structure having different semiconductor base materials
An electronic device can include a transistor structure. In an embodiment, the transistor structure can include a channel region and a drift structure including different semiconductor base materials. In another embodiment, the transistor structure can include a source region and a drain structure including a first region, wherein the source region and the first region include different semiconductor base materials and have the same conductivity type. In another aspect, a process of forming an electronic device can include forming a semiconductor layer; forming a body region; patterning the body region and the semiconductor layer to define a trench having a sidewall; forming a first region of a drain structure along the sidewall of the trench, wherein the first region and body region include different semiconductor base materials and different conductivity types.
1. An electronic device including a transistor structure, the transistor structure comprising:
a channel region including a first semiconductor base material and having a first conductivity type; and
a superjunction structure including a first semiconductor layer that includes a second semiconductor base material that is different from the first semiconductor base material, wherein the first semiconductor layer has the first conductivity type.
2. The electronic device of claim 1 , wherein the first and second semiconductor base materials have conduction bands that have corresponding energies at 300° K that are within 0.20 eV of each other.
3. The electronic device of claim 1 , wherein:
the superjunction structure comprises a second semiconductor layer adjacent to the first semiconductor layer,
the second semiconductor layer includes the second semiconductor base material and has a second conductivity type opposite the first conductivity type,
the first semiconductor layer has a first dopant concentration and the second semiconductor layer has a second dopant concentration, and
a first product of the first dopant concentration times of a volume of the first semiconductor layer is within 50% of a second product of the second dopant concentration times a volume of the second semiconductor layer.
4. The electronic device of claim 1 , wherein the first semiconductor base material is Si, and the second semiconductor base material is GaAs, Al x Ga (1-x) N where 0≤x<1, In x Al (1-x) N where 0≤x<1, In x Al (1-x-y) Ga y N where 0≤x<1 and 0≤y<1, InP, InSb, or any mixture thereof.
5. The electronic device of claim 1 , wherein the superjunction structure further comprises a second semiconductor layer that includes the second semiconductor base material and has a second conductivity type opposite the first conductivity type.
6. The electronic device of claim 5 , further comprising a doped region underlying the channel region, wherein the doped region includes the first semiconductor base material and has the second conductivity type, wherein a drain structure includes the doped region and the second semiconductor layer of the superjunction structure.
7. An electronic device including a first transistor structure, the first transistor structure comprising:
a buried doped region including a first semiconductor base material and having a first conductivity type; and
a superjunction structure including a first region that includes a second semiconductor base material different from the first semiconductor base material and has a second conductivity type opposite the first conductivity type.
8. The electronic device of claim 7 , wherein the second semiconductor base material includes a compound semiconductor material.
9. The electronic device of claim 8 , wherein the first semiconductor base material is Si.
10. The electronic device of claim 8 , wherein the compound semiconductor material is a III-V semiconductor material.
11. The electronic device of claim 7 , wherein the superjunction structure further comprises a second region along a side of the first region of the superjunction structure, wherein the second region includes the second semiconductor base material and has the first conductivity type.
12. The electronic device of claim 11 , further comprising a body region overlying the buried doped region, wherein the body region includes the first semiconductor base material and has the second conductivity type.
13. The electronic device of claim 12 , further comprising:
a doped region disposed between the body region and the buried doped region, including the first semiconductor base material and having the first conductivity type, wherein the second region of the superjunction structure lies along a conduction path between the doped region and the buried doped region; and
a gate electrode extending through the source region and the body region and only partly, not completely, through the doped region that overlies the buried doped region.
14. The electronic device of claim 13 , wherein a drain structure comprises the doped region and the second region of the superjunction structure, wherein the second region has a carrier mobility greater than 1410 cm 2 N/V·s, and the doped region of the drain structure has a carrier mobility of at most 1410 cm 2 /V·s.
15. The electronic device of claim 12 , further comprising:
a semiconductor layer disposed between the buried doped region and the doped region overlying the buried doped region, and including the first semiconductor base material;
a doped region disposed between the semiconductor layer and the body region, including the first semiconductor base material, and having the first conductivity type; and
a source region overlying a channel region of the transistor, including the first semiconductor base material, and having the second conductivity type; and
a gate electrode extending through the source region and the body region,
wherein the second region of the superjunction structure lies along a sidewall of the semiconductor layer and along a conduction path between the buried doped region and the doped region disposed between the semiconductor layer and the body region.
16. The electronic device of claim 15 , wherein the first semiconductor base material is Si, and the second semiconductor base material is GaAs.
17. The electronic device of claim 15 , further comprising a semiconductor layer, wherein a trench extends through at least a majority of a thickness of the semiconductor layer, and the second region of superjunction structure lies along a sidewall of the trench.
18. An electronic device including a first transistor structure, the first transistor structure comprising:
a source region including a first semiconductor base material and having a first conductivity type;
a drain structure including:
a first region that includes the first semiconductor base material and has the first conductivity type; and
a second region that includes a second semiconductor base material different from the first semiconductor base material and has the first conductivity type; and
a buried doped region contacting the second region of the drain structure and having the first conductivity type.
19. The electronic device of claim 18 , comprising a superjunction structure including the second region of the drain structure and another region, wherein the other region is along the second region, includes the second semiconductor base material, and has a second conductivity type opposite the first conductivity type.
20. The electronic device of claim 18 , further comprising a body region overlying the first region of the drain structure, wherein the body region includes the first semiconductor base material and has a second conductivity type opposite the first conductivity type.