Display device

1. A display device comprising:

a substrate including first to fourth subpixels defined thereon, the first to fourth subpixels including a red subpixel, a white subpixel, a blue subpixel and a green subpixel;

a first buffer layer positioned on the substrate, the first buffer layer including a silicon nitride layer and a silicon oxide layer; and

a thin film transistor and an organic light emitting diode positioned on the first buffer layer,

wherein each of the first to fourth subpixels includes an emission portion and a non-emission portion where the silicon nitride layer and a silicon oxide layer are positioned, and

wherein a thickness of the silicon nitride layer in the emission portion of the blue subpixel is less than a thickness of the silicon nitride layer in the emission portions of the white, red and green subpixels.

2. The display device of claim 1 , wherein the first subpixel is the red subpixel, the second subpixel is the white subpixel, the third subpixel is the blue subpixel, and the fourth subpixel is the green subpixel.

3. The display device of claim 1 , wherein the silicon oxide layer has a thickness of 3,000 Å to 7,000 Å.

4. The display device of claim 1 , wherein the thickness of the silicon nitride layer in the non-emission portion is 500 Å to 1,000 Å.

5. The display device of claim 2 , wherein a thickness of the silicon nitride layer in the emission portion of the first subpixel is from 800 Å to 880 Å,

wherein a thickness of the silicon nitride layer in the emission portion of the second subpixel is from 670 Å to 750 Å,

wherein a thickness of the silicon nitride layer in the emission portion of the third subpixel is from 550 Å to 600 Å, and

wherein a thickness of the silicon nitride layer in the emission portion of the fourth subpixel is from 670 Å to 750 Å.

6. The display device of claim 1 , wherein the first buffer layer includes the silicon nitride layer on the substrate and the silicon oxide layer on the silicon nitride layer.

7. The display device of claim 1 , wherein the silicon nitride layer includes a first silicon nitride layer and a second silicon nitride layer, and

wherein the first buffer layer includes the first silicon nitride layer on the substrate, the silicon oxide layer on the first silicon nitride layer, and the second silicon nitride layer on the silicon oxide layer.

8. The display device of claim 1 , wherein the silicon nitride layer includes a first silicon nitride layer and a second silicon nitride layer, and the silicon oxide layer includes a first silicon oxide layer and a second silicon oxide layer, and

wherein the first buffer layer includes the first silicon nitride layer on the substrate, the first silicon oxide layer on the first silicon nitride layer, the second silicon nitride layer on the first silicon oxide layer, and the second silicon oxide layer on the second silicon nitride layer.

9. The display device of claim 1 , further comprising a second buffer layer between the first buffer layer and the thin film transistor.

10. A display device comprising:

first to fourth subpixels defined on a substrate and each subpixel having red, white, blue and green emission portions and a non-emission portion; and

a first buffer layer disposed on the substrate and including a silicon nitride layer,

wherein the silicon nitride layer corresponding to the blue emission portion has a thickness different from those of the silicon nitride layer corresponding to the red, white and green emission portions to prevent from decreasing light transmittance in a range from a green wavelength to a maximum visible light wavelength, and

wherein the silicon nitride layer corresponding to the blue emission portion has a thickness less than those of the silicon nitride layer corresponding to the red, white and green emission portions.

11. The display device of claim 10 , wherein the first buffer layer further comprises a silicon oxide layer.

12. The display device of claim 11 , wherein the silicon oxide layer is disposed on the silicon nitride layer.

13. The display device of claim 10 , further comprising a second buffer layer on the first buffer layer.

14. The display device of claim 10 , wherein the silicon nitride layer in the non-emission portion has a thickness greater than that of the silicon nitride layer in the emission portion.

15. A display device comprising:

first to fourth subpixels defined on a substrate and each subpixel having red, white, blue and green emission portions and a non-emission portion; and

a first buffer layer disposed on the substrate and including a silicon nitride layer and a silicon oxide layer, at least one of the silicon nitride layer and the silicon oxide layer having more than one layers,

wherein the at least one of the silicon nitride layer and the silicon oxide layer corresponding to the blue emission portion has a thickness different from those of the silicon nitride layer corresponding to the red, white and green emission portions to prevent from decreasing light transmittance from green and higher wavelength bands, and

wherein the at least one of the silicon nitride layer and the silicon oxide layer corresponding to the blue emission portion has a thickness less than those of the silicon nitride layer corresponding to the red, white and green emission portions to increase light transmittance of the display device.

16. The display device of claim 15 , wherein the silicon oxide layer is disposed on the silicon nitride layer.

17. The display device of claim 15 , wherein the silicon nitride layer in the non-emission portion has a thickness greater than that of the silicon nitride layer in the emission portion.