IP Library Granted Patent US 12,464,855
Granted Patent B1
US 12,464,855 · App. 15/857,810 · Granted Nov 4, 2025

Photodiode heater

Inventor: Long Chen (Marlboro, NJ)
H10F77/60H10F39/103H10F71/1035H10F77/122H10N19/00
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Quick Facts
Patent No.
US 12,464,855
App. No.
15/857,810
Granted
Nov 4, 2025
Kind
B1
Abstract

An apparatus and system, including a chip including a photodetector, wherein the photodetector includes a semiconductor photodiode and a heater proximate to the photodiode; wherein the heater is enabled to increase a temperature of the photodiode and a temperature sensing device to determine the temperature of the photodiode.

Claims (30)

1 . An apparatus comprising:

a temperature sensing device;

a chip including a photodetector; wherein the photodetector includes a germanium-based photodiode, an electrode connected to the top of the germanium-based photodiode, and an integrated heater embedded in the chip; wherein the integrated heater is proximate to and above at least a portion of the electrode connected to the germanium-based photodiode; wherein the integrated heater is surrounded on all sides by an insulator material; wherein the integrated heater is enabled to increase a temperature of the germanium-based photodiode during operation of the germanium-based photodiode to detect an optical signal; wherein the temperature sensing device is enabled to determine the temperature of the germanium-based photodiode; and

control logic to keep the temperature of the germanium-based photodiode at a temperature range to maintain high responsivity in detecting light throughout a range between 1525 nm and 1610 nm by controlling the heater using a temperature from the temperature sensing device.

2 . The apparatus of claim 1 wherein the heater is a resistive heater.

3 . The apparatus of claim 1 wherein the heater is a diode heater.

4 . The apparatus of claim 1 wherein the temperature sensing device is off the chip.

5 . The apparatus of claim 1 wherein the temperature sensing device is on the chip.

6 . The apparatus of claim 5 wherein the temperature sensing device is located proximate to the germanium-based photodiode to monitor a local temperature of the germanium-based photodiode.

7 . The apparatus of claim 1 wherein the apparatus further includes a processor communicatively coupled to the temperature sensing device to determine a temperature of the germanium-based photodiode; wherein the processor is further communicatively coupled to the heater and is enabled to control the heater.

8 . The apparatus of claim 1 wherein the germanium-based photodiode is a waveguide integrated photodiode.

9 . The apparatus of claim 8 wherein light is enabled to propagate longitudinally along a waveguide axis.

10 . The apparatus of claim 1 wherein the germanium-based photodiode is kept at a temperature range between 55 degrees Celsius and 70 degrees Celsius.

11 . A system comprising: a chip including a photodetector; wherein the photodetector includes a germanium-based photodiode, an electrode connected to the top of the germanium-based photodiode, and an integrated heater embedded in the chip; wherein the integrated heater is proximate to and above at least a portion of the electrode connected to the germanium-based photodiode; wherein the integrated heater is surrounded on all sides by an insulator material; wherein the integrated heater is enabled to increase a temperature of the germanium-based photodiode during operation of the germanium-based photodiode to detect an optical signal; and

a temperature sensing device to determine the temperature of the germanium-based photodiode; and

control logic; wherein the control logic enables:

detecting the temperature of the germanium-based photodiode using the temperature sensing device;

comparing the temperature to a threshold; and

adjusting power to a heater power to control a temperature of the germanium-based photodiode to keep the temperature of the germanium-based photodiode at a temperature range to maintain high responsivity in detecting light throughout a range between 1525 nm and 1610 nm.

12 . The system of claim 11 wherein the system further includes a processor.

13 . The system of claim 11 wherein the heater is a resistive heater.

14 . The system of claim 11 wherein the heater is a diode heater.

15 . The system of claim 11 wherein the temperature sensing device is off the chip.

16 . The system of claim 11 wherein the temperature sensing device is on the chip.

17 . The system of claim 16 wherein the temperature sensing device is located proximate to the germanium-based photodiode to monitor a temperature of the germanium-based photodiode.

18 . The system of claim 11 wherein the logic further enables: based on a comparison that the temperature of the chip is less than the threshold, turning the heater on if the heater is off.

19 . The system of claim 11 wherein the control logic further enables: based on a comparison that the temperature of the chip is greater than the threshold, determining if the heater is being powered; and based on a determination that the heater is being powered, reducing the power to the heater.

20 . The system of claim 11 wherein the germanium-based photodiode is a waveguide integrated photodiode.

21 . The system of claim 20 wherein light is enabled to propagate longitudinally along a waveguide axis.

22 . The system of claim 11 wherein the germanium-based photodiode is kept at a temperature range between 55 degrees Celsius and 70 degrees Celsius.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2024
From: ACACIA COMMUNICATIONS, INC.
To: ACACIA TECHNOLOGY, INC.
Reel/Frame 066832/0659 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2018
From: CHEN, LONG
To: ACACIA COMMUNICATIONS, INC.
Reel/Frame 047764/0483 →
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