Ultra-wideband light emitting diode and optical detector comprising indium gallium arsenide phosphide and method of fabricating the same

1. A light-emitting diode (LED) comprising:

a substrate;

a carrier confinement (CC) region positioned over the substrate, the CC region defining:

a first CC layer comprising indium gallium phosphide;

a second CC layer positioned over the first CC layer, the second CC layer comprising gallium arsenide phosphide;

and

an active region positioned over the CC region, the active region configured to have a transient response time of less than 500 picoseconds (ps).

2. The LED of claim 1 , wherein the active region is at least one of a quantum well structure and a multi quantum well structure.

3. The LED of claim 2 , wherein the active region comprises indium gallium arsenide.

4. The LED of claim 3 , wherein the active region has an indium composition between 10% and 35%.

5. The LED of claim 4 , wherein the active region has a thickness between 50 and 150 angstroms for each quantum well.

6. The LED of claim 5 , further comprising a first barrier layer positioned between the CC region and the active region, wherein the first barrier layer has a phosphorous composition between 25% and 80%.

7. The LED of claim 6 , wherein the first barrier layer has a thickness between 25 and 75 angstroms.

8. The LED of claim 7 , further comprising a second barrier layer positioned over the active region, wherein the second barrier layer has a phosphorous composition between 40% and 50%.

9. The LED of claim 8 , wherein the second barrier layer has a thickness between 30 and 40 angstroms.

10. The LED of claim 9 , further comprising:

an n-type contact layer positioned between the substrate and the CC region; and

a p-type contact layer positioned over the second barrier layer.

11. The LED of claim 10 , wherein the first CC layer has an indium composition between 45% and 55%, and the second CC layer has a phosphorous composition between 25% and 80%.

12. The LED of claim 11 , wherein the first CC layer has a thickness between 100 and 2000 angstroms and the second CC layer has a thickness between 25 and 75 angstroms.

13. The LED of claim 11 , wherein the CC region further defines:

a third CC layer positioned over the second CC layer, the third CC layer comprising indium gallium phosphide; and

a fourth CC layer positioned over the third CC layer, the fourth CC layer comprising gallium arsenide phosphide.

14. The LED of claim 13 , wherein the third CC layer has an indium composition between 45% and 55%, and the fourth CC layer has a phosphorous composition between 25% and 80%.

15. The LED of claim 14 , wherein the first CC layer, the second CC layer, the third CC layer, and the fourth CC layer each have a thickness between 25 and 75 angstroms.

16. The LED of claim 13 , wherein the CC region further defines:

a fifth CC layer positioned over the fourth CC layer, the fifth CC layer comprising indium gallium phosphide; and

a sixth CC layer positioned over the fifth CC layer, the sixth CC layer comprising gallium arsenide phosphide.

17. The LED of claim 16 , wherein:

the third CC layer and the fifth CC layer each have an indium composition between 45% and 55%; and

the fourth CC layer and the sixth CC layer each have a phosphorous composition between 25% and 80%.

18. The LED of claim 17 , wherein the first CC layer, the second CC layer, the third CC layer, the fourth CC layer, the fifth CC layer, and the sixth CC layer each have a thickness between 25 and 75 angstroms.

19. The LED of claim 18 , wherein:

the n-type contact layer and the p-type contact layer each comprise gallium arsenide;

the n-type contact layer has a thickness between 5000 and 20000 angstroms; and

the p-type contact layer has a thickness between 500 and 5000 angstroms.

20. The LED of claim 1 , wherein the LED is implemented in a flip-chip package.

21. The LED of claim 1 , wherein the LED is implemented within an optical transceiver and the optical transceiver further comprises an optical detector.

22. The LED of claim 1 , wherein:

the LED is configured to transmit at a first wavelength;

the LED is a first LED within an array of LEDs; and

a second LED within the array of LEDs is configured to operate at a second wavelength.

23. The LED of claim 22 , wherein:

the array of LEDs is implemented within an optical transceiver;

the optical transceiver further comprises an array of optical detectors;

a first optical detector within the array of optical detectors is configured to receive at the first wavelength; and

a second optical detector within the array of optical detectors is configured to receive at the second wavelength.

24. The LED of claim 23 , wherein the LED is implemented in a flip-chip package.

25. The LED of claim 23 , wherein the first optical detector and the second optical detector are implemented within a first epitaxial structure.

26. The LED of claim 22 , wherein the LED is implemented in a flip-chip package.

27. The LED of claim 1 , wherein the LED is configured for variable wavelength modulation.

28. The LED of claim 27 , wherein the LED is implemented in a flip-chip package.

29. The LED of claim 1 , wherein the LED is implemented within an epitaxial structure and the epitaxial structure further comprises an optical detector.

30. A method of forming a light-emitting diode (LED), comprising:

providing an epitaxial structure on a substrate, the epitaxial structure comprising:

a carrier confinement (CC) region positioned over the substrate, the CC region defining:

a first CC layer comprising indium gallium phosphide; and

a second CC layer positioned on the first CC layer, the second CC layer comprising gallium arsenide phosphide; and

an active region over the CC region, the active region configured to have a transient response time of less than 500 picoseconds (ps).