Ultra-wideband, free space optical communication apparatus
Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a free space optical (FSO) communication apparatus includes a digital data port, an array of light-emitting diodes (LEDs) each configured to have a transient response time of less than 500 picoseconds (ps), and current drive circuitry coupled between the digital data port and the array of LEDs.
1. A light-emitting diode (LED) comprising:
a substrate;
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium nitride; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium nitride; and
an active region positioned over the CC region, wherein:
the active region comprises gallium nitride; and
the active region is configured to have a transient response time of less than 500 picoseconds (ps).
2. The LED of claim 1 , wherein the active region is at least one of a quantum well structure and a multi quantum well structure.
3. The LED of claim 2 , wherein the active region has a thickness between 50 and 150 angstroms for each quantum well.
4. The LED of claim 3 further comprising:
a first barrier layer positioned between the CC region and the active region; and
a second barrier layer positioned over the active region, wherein the first barrier layer has an aluminum composition between 15% and 30%.
5. The LED of claim 4 , wherein the first barrier layer has a thickness between 25 and 75 angstroms.
6. The LED of claim 5 further comprising:
an n-type contact layer positioned between the substrate and the CC region; and
a p-type contact layer positioned over the second barrier layer.
7. The LED of claim 6 , wherein:
the first CC layer has an aluminum composition between 10% and 45%; and
the second CC layer has an aluminum composition between 10% and 45%.
8. The LED of claim 7 , wherein:
the first CC layer has a thickness between 100 and 2000 angstroms; and
the second CC layer has a thickness between 25 and 75 angstroms.
9. The LED of claim 8 , wherein:
the n-type contact layer and the p-type contact layer each comprise gallium nitride;
the n-type contact layer has a thickness between 5000 and 20000 angstroms; and
the p-type contact layer has a thickness between 500 and 5000 angstroms.
10. The LED of claim 1 , wherein the LED is implemented in a flip-chip package.
11. The LED of claim 1 , wherein the LED is implemented within an optical transceiver and the optical transceiver further comprises an optical detector.
12. The LED of claim 1 , wherein:
the LED is configured to transmit at a first wavelength;
the LED is a first LED within an array of LEDs; and
a second LED within the array of LEDs is configured to operate at a second wavelength.
13. The LED of claim 12 , wherein the LED is implemented in a flip-chip package.
14. The LED of claim 12 , wherein:
the array of LEDs is implemented within an optical transceiver;
the optical transceiver further comprises an array of optical detectors;
a first optical detector within the array of optical detectors is configured to receive at the first wavelength; and
a second optical detector within the array of optical detectors is configured to receive at the second wavelength.
15. The LED of claim 14 , wherein the first optical detector and the second optical detector are implemented within a first epitaxial structure.
16. The LED of claim 15 , wherein the LED is implemented in a flip-chip package.
17. The LED of claim 1 , wherein the LED is configured for variable wavelength modulation.
18. The LED of claim 17 , wherein the LED is implemented in a flip-chip package.
19. The LED of claim 1 , wherein the LED is implemented within an epitaxial structure and the epitaxial structure further comprises an optical detector.
20. A method of forming a light-emitting diode (LED), comprising:
providing an epitaxial structure on a substrate, the epitaxial structure comprising:
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium nitride; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium nitride;
and
an active region positioned over the CC region, wherein:
the active region comprises gallium nitride; and
the active region is configured to have a transient response time of less than 500 picoseconds (ps).