Light emitting diode
An AlGaInP light-emitting diode includes from bottom up a substrate, a distributed Bragg reflector (DBR) reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.
1. An AlGaInP light-emitting diode, comprising from bottom up:
a substrate;
a distributed Bragg reflector (DBR) reflecting layer;
an N-type semiconductor layer;
a quantum well light-emitting layer;
a P-type semiconductor layer;
a transient layer; and
a P-type current spreading layer;
wherein:
the DBR reflecting layer is multispectral-doping, comprising:
a first DBR reflecting layer;
a second DBR reflecting layer; and
a third DBR reflecting layer;
a doping concentration of the first DBR reflecting layer is higher than a doping concentration of the second DBR reflecting layer, and the doping concentration of the second DBR reflecting layer is higher than a doping concentration of the third DBR reflecting layer;
the P-type semiconductor layer comprises:
a first P-type semiconductor layer adjacent to the quantum well light-emitting layer; and
a second P-type semiconductor layer adjacent to the transient layer; wherein a doping concentration of the second P-type semiconductor layer is lower than a doping concentration of the first P-type semiconductor layer;
wherein a material of the P-type semiconductor layer comprises Al x In (1-x) P, wherein 0<x<1.
2. The AlGaInP light-emitting diode of claim 1 , configured to be smaller than 50 mil 2 , and with a drive current higher than or equal to 100 mA to improve aging performance.
3. The AlGaInP light-emitting diode of claim 1 , wherein the substrate is selected from at least one of GaAs, GaP or Ge suitable for epitaxial growth.
4. The AlGaInP light-emitting diode of claim 1 , wherein the doping concentration of the third DBR reflecting layer is 2×10 18 ˜1×10 20 cm −3 .
5. The AlGaInP light-emitting diode of claim 1 , wherein reflection wave bands of the first DBR reflecting layer, the second DBR reflecting layer and the third DBR reflecting layer are 700-750 nm, 650-700 nm, and 600-650 nm, respectively.
6. The AlGaInP light-emitting diode of claim 1 , wherein there are 2-7 pairs of the first DBR reflecting layer, 6-12 pairs of the second DBR reflecting layer, and 13-20 pairs of the third DBR reflecting layer, respectively.
7. The AlGaInP light-emitting diode of claim 1 , wherein the doping concentration of the second P-type semiconductor layer is 40%-80% the doping concentration of the first P-type semiconductor layer.
8. The AlGaInP light-emitting diode of claim 1 , wherein the doping concentration of the first P-type semiconductor layer is 0.7×10 18 -1.5×10 18 cm −3 , and the doping concentration of the second P-type semiconductor layer is 0.28×10 18 -1.2×10 18 cm −3 .
9. The AlGaInP light-emitting diode of claim 1 , wherein a thickness of the second P-type semiconductor layer is 10%-30% of a thickness of the first P-type semiconductor layer.
10. The AlGaInP light-emitting diode of claim 1 , wherein a thickness of the first P-type semiconductor layer is 0.3-1.0 μm, and a thickness of the second P-type semiconductor layer is 0.03-0.3 μm.
11. The AlGaInP light-emitting diode of claim 1 , wherein a doping concentration of the transient layer is 1.5×10 18 -4.0×10 18 cm −3 .
12. The AlGaInP light-emitting diode of claim 1 , wherein the transient layer adopts Al x Ga y In 1-x-y P material for gradient growth of each component, wherein, 0<x<1, 0<y<1, x+y<1.
13. The AlGaInP light-emitting diode of claim 1 , wherein the DBR reflecting layer adopts multi-spectral DBR, comprising a material of Al x Ga 1-x As/Al y Ga 1-y As, where, 0<x≤1, 0<y<1.
14. The AlGaInP light-emitting diode of claim 1 , wherein a doping impurity of the multispectral DBR reflecting layer is any of Si, Sn, S, Se or Te.
15. The AlGaInP light-emitting diode of claim 1 , wherein the doping concentration of the first DBR reflecting layer is 7×10 18 -1×10 20 cm −3 ; the doping concentration of the second DBR reflecting layer is 5×10 18 -1×10 20 cm −3 , which is lower than that of the first DBR reflecting layer; and the doping concentration of the third DBR reflecting layer is 2×10 18 -1×10 20 cm −3 , which is lower than that of the second DBR reflecting layer.
16. The AlGaInP light-emitting diode of claim 1 , wherein the N-type semiconductor layer comprises Al x In (1-x) P, where, 0<x<1.
17. The AlGaInP light-emitting diode of claim 1 , wherein a doping impurity of the N-type semiconductor layer is any of Si, Sn, S, Se or Te.
18. The AlGaInP light-emitting diode of claim 1 , wherein an N-type doping concentration of the N-type semiconductor layer is 0.5×10 18 -3.0×10 18 cm −3 .
19. The AlGaInP light-emitting diode of claim 1 , wherein a material of the quantum well light-emitting layer is Al x Ga y In 1-x-y P, where 0<x<1, 0<y<1.
20. The AlGaInP light-emitting diode of claim 1 , wherein:
a doping impurity of the P-type semiconductor layer comprises at least one of Be, Mg, Zn, Cd, or C.