Flip-chip light emitting diode chip and fabrication method

1. A flip-chip light-emitting diode chip, comprising an epitaxial laminated layer with an upper surface and an opposing lower surface, including:

an n-type semiconductor layer;

an active layer; and a p-type semiconductor layer; wherein:

a portion of the n-type semiconductor layer and the active layer are etched to expose a portion of the p-type semiconductor layer;

a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer, wherein the first electrode is disposed over a surface of the n-type semiconductor layer, and the second electrode is disposed over a surface of the exposed p-type semiconductor layer, and wherein the first electrode reflects light from the active layer upwards;

a transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region;

a patterned transparent bonding medium layer, which fills up the recess region of the transparent medium layer, and an upper surface of the patterned transparent bonding medium layer is at a same plane with an upper surface of the transparent medium layer; and

a transparent substrate that connects the patterned transparent bonding medium layer to the upper surface of the transparent medium layer.

2. The flip-chip light-emitting diode chip of claim 1 , wherein:

a lower surface of the n-type semiconductor layer is arranged with pyramid-shaped recess arrays; and

each pyramid-shaped recess of the pyramid-shaped recess arrays is arranged in a vertical shadow area of the transparent bonding medium layer to reflect light from the vertical shadow area of the transparent bonding medium layer, such that, light deviates from the vertical shadow area, thereby reducing or eliminating light reflection from the transparent bonding medium layer to an inside part of the chip.

3. The flip-chip light-emitting diode chip of claim 1 , wherein the transparent substrate is 100-200 μm thick.

4. The flip-chip light-emitting diode chip of claim 1 , wherein refractivity of the transparent medium layer is higher than or equals to that of the transparent substrate.

5. The flip-chip light-emitting diode chip of claim 4 , wherein a material of the transparent medium layer is titanium dioxide, aluminum oxide, ITO, silicon nitride or zinc oxide.

6. The flip-chip light-emitting diode chip of claim 4 , wherein the transparent medium layer is 2-5 μm thick.

7. The flip-chip light-emitting diode chip of claim 1 , wherein the transparent medium layer is provided with grid-shaped or array-shaped recess region.

8. The flip-chip light-emitting diode chip of claim 7 , wherein the recess region has a cylindrical pillar shape, a multi-column pillar shape, or a pyramid shape.

9. The flip-chip light-emitting diode chip of claim 7 , wherein the recess region has a depth of 1-3 μm.

10. A light-emitting system comprising a plurality of flip-chip light-emitting diodes, wherein each flip-chip light-emitting diode further comprises an epitaxial laminated layer, with an upper surface and a lower surface opposite to each other, further comprises:

an n-type semiconductor layer;

an active layer; and a p-type semiconductor layer;

wherein part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer;

a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer, wherein, the first electrode is disposed over a surface of the n-type semiconductor layer, and the second electrode is disposed over a surface of the exposed p-type semiconductor layer, and wherein the first electrode reflects light from the active layer upwards;

a transparent medium layer over the upper surface of the epitaxial laminated layer, wherein an upper surface of the transparent medium layer is provided with a grid-shaped or array-shaped recess region;

a patterned transparent bonding medium layer, which fills up the recess region of the transparent medium layer, and an upper surface of the patterned transparent bonding medium layer is at a same plane with an upper surface of the transparent medium layer; and

a transparent substrate that connects the patterned transparent bonding medium layer to the upper surface of the transparent medium layer.

11. The light-emitting system of claim 10 , wherein the lower surface of the n-type semiconductor layer is arranged with pyramid-shaped recess arrays; each pyramid-shaped recess of the pyramid-shaped recess arrays is arranged in the vertical shadow area of the transparent bonding medium layer to reflect light from the vertical shadow area of the transparent bonding medium layer; as a result, light can deviates from this shadow area, thereby eliminating light reflection from the transparent bonding medium layer to an inside part of the chip.

12. The light-emitting system of claim 10 , wherein the transparent medium layer is provided with a grid-shaped or array-shaped recess region; with a cylindrical pillar shape, a multi-column pillar shape, or a pyramid shape, and a depth of 1-3 μm.

13. The light-emitting system of claim 10 , wherein the transparent medium layer is 2-5 μm thick.

14. The light-emitting system of claim 10 , wherein refractivity of the transparent medium layer is higher than or equals to that of the transparent substrate.

15. The light-emitting system of claim 14 , wherein material of the transparent medium layer is titanium dioxide, aluminum oxide, ITO, silicon nitride or zinc oxide.