Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first main surface and a second main surface opposite to the first main surface, and includes a first conductive layer formed on the second main surface. A through hole penetrates through the semiconductor substrate from the first main surface to the second main surface, so that the first conductive layer formed on the second main surface is exposed at a bottom portion of the through hole. A seed layer is formed on a side surface of the through hole from the bottom portion of the through hole to the first main surface; a second conductive layer is formed on the seed layer; and a third conductive layer is selectively formed on the second conductive layer.
1. A semiconductor device comprising:
a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface;
a first conductive layer covering a part of the first main surface;
a through electrode connected to the first conductive layer, said through electrode including a seed layer, a first conductive plated layer, and a second conductive plated layer, said seed layer contacting with the semiconductor substrate through an insulation layer, said seed layer having an opening portion exposing the insulation layer, said first conductive plated layer being formed on the seed layer, said first conductive plated layer being filled in the opening portion and contacting with the insulation layer through the opening portion, said second conductive plated layer being formed on the first conductive plated layer; and
a second conductive layer formed on the second main surface, said second conductive layer being formed of the seed layer, the first conductive plated layer, and the second conductive plated layer,
wherein said first conductive plated layer has a first edge surface, and
said second conductive plated layer has a second edge surface flush with the first edge surface.
2. The semiconductor device according to claim 1 , further comprising a semiconductor element formed on the first main surface,
wherein said semiconductor element is electrically connected to the first conductive layer.
3. The semiconductor device according to claim 1 , wherein said first conductive plated layer has a first film thickness, and
said second conductive plated layer has a second film thickness greater than the first film thickness.
4. The semiconductor device according to claim 1 , wherein said through electrode is connected to a surface of the first conductive layer facing the first main surface.