CdTe-based compound single crystal and method for producing the same
Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 μm obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×10 7 Ωcm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 μm or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.
1. A CdTe based compound single crystal comprising:
a precipitate consisting essentially of particles having a particle size of less than 0.1 μm obtained from an analysis by a light scattering tomography method, and
an n-type impurity being Ga, In or Cl, wherein
a concentration of Ga is 1.8 ppmwt or more and 2.2 ppmwt of less of the CdTe based compound,
a concentration of In is 0.3 ppmwt or more and 6.3 ppmwt of less of the CdTe based compound, and
a concentration of Cl is 40 ppmwt or more and 300 ppmwt of less of the CdTe based compound.
2. The CdTe based compound single crystal according to claim 1 , wherein resistivity is 1×10 7 Ωcm or more.
3. The CdTe based compound single crystal according to claim 1 , wherein a precipitate having a particle size of 0.1 μm or more obtained from the analysis by the light scattering tomography method is not detected.
4. The CdTe based compound single crystal according to claim 1 , wherein the precipitate is a Te precipitate.
5. A method for producing the CdTe based compound single crystal of claim 1 comprising a precipitate consisting essentially of particles having a particle size of less than 0.1 μm obtained from an analysis by a light scattering tomography method comprising:
performing a first heat treatment by heat treating the CdTe based compound single crystal at a temperature of 920° C. or more and 970° C. or less, and a Cd vapor pressure of 0.0497 MPa or more and 0.0523 MPa or less; and
performing a second heat treatment by heat treating the CdTe based compound single crystal at a temperature of 920° C. or more and 970° C. or less, and a Cd vapor pressure of 0.0377 MPa or more and 0.0397 MPa or less.
6. The method for producing a CdTe based compound single crystal according to claim 5 , wherein the temperature of the first heat treatment and the temperature of the second heat treatment are 930° C. or more and 960° C. or less.
7. The method for producing a CdTe based compound single crystal according to claim 5 , wherein the temperature of the first heat treatment is 940° C. or more and 950° C. or less and the temperature of the second heat treatment is 945° C. or more and 955° C. or less.
8. The method for producing a CdTe based compound single crystal according to claim 5 , wherein the CdTe based compound single crystal is a single crystal grown by melting a raw material including Zn and/or any one element selected from Cl, In, Ga with Cd, Te as main components.