Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area
A bipolar junction transistor (BJT) containing sensor that includes a vertically oriented stack of an emitter overlying a supporting substrate, a base region present directly atop the emitter and a collector atop the base region. A first extrinsic base region is in contact with a first sidewall of a vertically oriented base region. The first extrinsic base region is electrically contacted to provide the bias current of the bipolar junction transistor during sensor operation. A second extrinsic base region is in contact with a second sidewall of the base region. The second extrinsic base region includes a sensing element. A sample trench is present adjacent to the BJT having a trench sidewall provided by the sensing element.
1. A bipolar junction transistor containing sensor comprising:
a vertically oriented stack of an emitter overlying a supporting substrate, a vertically oriented base region present directly atop the emitter and a collector atop the base region;
a first extrinsic base region in contact with a first sidewall of the vertically oriented base region, wherein the first extrinsic base region is electrically contacted to provide a bias current of the bipolar junction transistor during sensor operation;
a second extrinsic base region in contact with a second sidewall of the base region, the second extrinsic base region including a sensing element; and
a sample trench having a trench sidewall provided by the sensing element.
2. The bipolar junction transistor containing sensor of claim 1 , wherein the sensing element that provides the trench sidewall extends an entire height of the second extrinsic base region.
3. The bipolar junction transistor containing sensor of claim 1 , wherein the sensing element is a titanium nitride layers, the sensing element being for sensing PH of a sample within the sample trench.
4. The bipolar junction transistor containing sensor of claim 1 , wherein the sensing element is comprised of silver chloride, the sensing element being for sensing chloride content of a sample within the sample trench.
5. The bipolar junction transistor containing sensor of claim 1 , wherein the sensing element is comprised of gold, the sensing element being for sensing proteins using thio chemistry.
6. A sensor comprising:
a sample trench;
a first vertically oriented bipolar junction transistor doped to a first conductivity type, the first vertically oriented bipolar junction transistor having a first sensing surface of a first extrinsic base region providing a first sidewall of the sample trench; and
a second vertically oriented bipolar junction transistor doped to a second conductivity type, the second vertically oriented bipolar junction transistor having a second sensing surface of a second extrinsic base region providing a second sidewall of the sample trench.
7. The sensor of claim 6 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
8. The sensor of claim 6 , wherein the first sensing surface extends an entire height of the first extrinsic base region.
9. The sensor of claim 8 , wherein the first sensing surface has a composition selected from the group consisting of titanium nitride (TiN), silver chloride a (AgCl), gold (Au), and combinations thereof.
10. The sensor of claim 6 , wherein the second sensing surface extends an entire height of the second extrinsic base region.
11. The sensor of claim 10 , wherein the second sensing surface has a composition selected from titanium nitride (TiN), silver chloride (AgCl), gold (Au), and combinations thereof.
12. A method of forming a sensor comprising:
forming a bipolar junction transistor including a vertically oriented base region, and a two-component extrinsic base region;
forming a sample trench exposing a sidewall of a first component of the two-component extrinsic base region; and
forming a sensor surface on the sidewall of the first component of the extrinsic base region that is opposite a sidewall of the first component of the extrinsic base region that is in contact with the vertically oriented base region.
13. The method of claim 12 , wherein said forming the sample trench comprises depositing at least one dielectric layer on the bipolar junction transistor, and etching the sample trench into the at least one dielectric layer.
14. The method of claim 13 , wherein said forming the sensor surface on the sidewall of the first component of the extrinsic base region comprises applying a lateral etch to the sidewall of the first component of the extrinsic base region to form an undercut region present underlying the at least one dielectric layer; and filling the undercut region with a metal-containing material.
15. The method of claim 14 , wherein the metal-containing material that provides the sensor surface is selected from the group consisting of titanium nitride (TiN), silver chloride (AgCl), gold (Au), and combinations thereof.
16. The method of claim 14 , wherein said filling the undercut region comprises atomic layer deposition (ALD) of the metal-containing material.
17. The method of claim 16 , wherein following said filling the undercut region, an etch process removes the metal-containing material that overfills the undercut region.
18. The method of claim 17 , wherein the etch process that removes the metal-containing material that overfills the undercut region is an anisotropic etch.
19. The method of claim 18 , wherein the anisotropic etch is reactive ion etching.
20. The method of claim 18 , wherein a second component of the two-component extrinsic base region that is separate from the first component of the two-component extrinsic base region is electrically contacted to provide a bias current of the bipolar junction transistor during sensor operation.