Magnetoresistive device comprising chromium
The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.
1. A method of forming a magnetoresistive device, the method comprising:
forming a magnetic tunnel junction (MTJ) structure over a substrate, the MTJ structure including, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer;
forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer;
forming a capping layer comprising chromium (Cr) over the pinning layer; and
annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer.
2. The method according to claim 1 , wherein the condition is sufficient to cause diffusion of Cr further into the reference layer.
3. The method according to claim 1 , wherein the condition is sufficient to cause the reference layer and the free layer to crystallize.
4. The method according to claim 1 , wherein annealing includes subjecting the MTJ structure, the pinning layer and the capping layer to an ambient temperature of at least 250° C.
5. The method according to claim 1 , further comprising, subsequent to forming the free layer and before forming the reference layer, annealing to cause the free layer to crystallize.
6. The method according to claim 1 , further comprising, subsequent to forming the reference layer and before forming the pinning layer, annealing to cause the reference layer to crystallize.
7. The method according to claim 1 , wherein the capping layer includes one or more monolayers of Cr, or a combination of one or more monolayers of Cr and one or more monolayers of a second element.
8. The method according to claim 1 , wherein the capping layer includes a repeating sequence of one or more Cr layers alternating with one or more layers of an element selected from the group consisting of Ni, Ta, Pt, Pd, Tb, Gd, W, Mo, Ru, Bi, Hf, Fe, Co, Ti, and V.
9. The method according to claim 1 , wherein the pinning layer includes a hard magnetic layer.
10. The method according to claim 1 , wherein each of the free layer and the reference layer includes a CoFeB layer.
11. The method according to claim 1 , further comprising forming a spacer layer on the reference layer, and thereafter forming the pinning layer on the spacer layer.
12. The method according to claim 1 ,
wherein annealing the capping layer comprises causing diffusion of Cr from the capping layer into at least the at least one sub-layer of the pinning layer.
13. The method according to claim 12 , further comprising, subsequent to forming the free layer and before forming the reference layer, annealing to cause the free layer to crystallize.
14. The method according to claim 12 , further comprising, subsequent to forming the reference layer and before forming the at least one sub-layer of the pinning layer, annealing to cause the reference layer to crystallize.
15. The method according to claim 12 , wherein the at least one sub-layer of the pinning layer includes a hard magnetic layer.