IP Library Granted Patent US 10,319,702
Granted Patent B2
US 10,319,702 · App. 15/860,730 · Granted Jun 11, 2019

Semiconductor packages

Inventors: Chul Park (Seoul, KR); Seonggwan Lee (Daegu, KR); Minkyeong Park (Pyeongtaek-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L25/0657H01L25/043H01L25/074H01L25/0756H01L25/117H01L2225/0651H01L2225/06506H01L2225/06541H01L2225/06562H01L2225/06582
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Quick Facts
Patent No.
US 10,319,702
App. No.
15/860,730
Granted
Jun 11, 2019
Kind
B2
Abstract

A semiconductor package includes a substrate including a signal pattern on an upper surface thereof, a chip stack on the substrate, and a first semiconductor chip and one or more spacers between the substrate and the chip stack. The chip stack includes one or more second semiconductor chips stacked on the substrate. The one or more spacers and the first semiconductor chip are adjacent to respective corners of a lowermost second semiconductor chip, in plan view. The one or more spacers have the same planar shape as the first semiconductor chip.

Claims (36)

1. A semiconductor package comprising:

a substrate comprising a signal pattern on an upper surface thereof;

a chip stack on the upper surface of the substrate; and

a first semiconductor chip and one or more spacers that are between the substrate and the chip stack,

wherein the first semiconductor chip and the one or more spacers are spaced apart from each other,

wherein the chip stack comprises one or more second semiconductor chips stacked on the substrate, and a third semiconductor chip between the substrate and the chip stack,

wherein the one or more spacers and the first semiconductor chip are adjacent to respective corners of a lowermost second semiconductor chip, in plan view, and

wherein the one or more spacers have a same planar shape as the first semiconductor chip,

wherein the third semiconductor chip is laterally spaced apart from the first semiconductor chip and the one or more spacers and is opposite to the first semiconductor chip,

wherein the chip stack further comprises one or more fourth semiconductor chips on the one or more second semiconductor chips,

wherein the one or more second semiconductor chips have a first offset stack structure of a first stepped shape tilted in a first direction, and

wherein the one or more fourth semiconductor chips have a second offset stack structure of a second stepped shape tilted in a second direction that is opposite the first direction,

wherein the signal pattern comprises a third signal pad spaced apart from the chip stack in the first direction and electrically connected to the third semiconductor chip, and a fourth signal pad spaced apart from the chip stack in the first direction and electrically connected to at least one of the fourth semiconductor chips, and

wherein a third distance between the third signal pad and the fourth signal pad is less than a fourth distance between the fourth signal pad and a second side of the lowermost second semiconductor chip.

2. The semiconductor package according to claim 1 , wherein a gap between the one or more spacers and the first semiconductor chip comprises a first line region extending in a first direction and a second line region extending in a second direction perpendicular to the first direction.

3. The semiconductor package according to claim 2 , further comprising:

a molding layer covering the chip stack and filling the gap.

4. The semiconductor package according to claim 1 ,

wherein the lowermost second semiconductor chip has a first side and a second side that are opposite to each other in a first direction, and

wherein a side of the first semiconductor chip is aligned with the first side of the lowermost second semiconductor chip.

5. The semiconductor package according to claim 1 , wherein the first semiconductor chip and the one or more spacers that have the same planar shape as the first semiconductor chip are respectively adjacent to opposite ones of the corners of the lowermost second semiconductor chip, in plan view.

6. The semiconductor package according to claim 1 ,

wherein the lowermost second semiconductor chip has a first side and a second side that are opposite to each other in a first direction, and

wherein the chip stack has an offset stack structure in a stepped shape tilted in a second direction that is opposite to the first direction.

7. The semiconductor package according to claim 6 , wherein the signal pattern comprises:

a first signal pad spaced apart from the chip stack in the second direction and electrically connected to the first semiconductor chip,

a second signal pad spaced apart from the chip stack in the second direction and electrically connected to the one or more second semiconductor chips; and

a conductive line connecting the first signal pad and the second signal pad.

8. The semiconductor package according to claim 7 , wherein a first distance between the first signal pad and the second signal pad is less than a second distance between the second signal pad and the first side of the lowermost second semiconductor chip.

9. The semiconductor package according to claim 1 ,

wherein the chip stack has a vertical stack structure in which the one or more second semiconductor chips substantially overlap each other entirely, and

wherein the one or more second semiconductor chips are electrically connected to the first semiconductor chip through a through-silicon-via passing through the chip stack.

10. The semiconductor package according to claim 1 ,

wherein a side of the third semiconductor chip is aligned with a side of the lowermost second semiconductor chip.

11. The semiconductor package according to claim 1 ,

wherein at least one of the one or more second semiconductor chips of the chip stack does not overlap the first semiconductor chip in the plan view.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2018
From: PARK, CHUL; LEE, SEONGGWAN; PARK, MINKYEONG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 044521/0079 →
Priority Claims (1)
KR 10-2017-0101284 · Aug 9, 2017 · national
Continuity (1)
Related Publication 20190051634A1 · Feb 14, 2019
Cited By (1)
US 12,721,225