Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.
1. A method, comprising:
forming a thallium bromide element that has a crystalline structure; and
performing a treatment step to the thallium bromide element, the treatment step configured to inhibit formation or migration of dislocations in the crystalline structure of the thallium bromide element, the treatment step comprising:
implanting oxygen in a surface of the thallium bromide element by way of an ion beam.
2. The method of claim 1 , further comprising attaching an electrical contact to the surface of the thallium bromide element, wherein the treatment step is configured to inhibit the formation or migration of the dislocation within a vacancy diffusion length of the electrical contact.
3. The method of claim 2 , wherein performing the treatment step further comprises applying a material layer to the thallium bromide element prior to the attaching the electrical contact, wherein the electrical contact is subsequently attached to the material layer.
4. The method of claim 3 , wherein the material layer comprises an epitaxial film.
5. The method of claim 3 , wherein the material layer comprises a polycrystalline layer.
6. The method of claim 5 , wherein the polycrystalline layer comprises polycrystalline thallium bromide.
7. The method of claim 1 , wherein performing the treatment step further comprises implanting an impurity in the thallium bromide element.
8. The method of claim 7 , the impurity comprising an ion, the ion soluble in the thallium bromide element.
9. The method of claim 8 , wherein the ion is aliovalent in the thallium bromide element.
10. The method of claim 8 , wherein the ion is isovalent in the thallium bromide element.
11. The method of claim 7 , wherein the impurity is substantially insoluble in the thallium bromide element.
12. The method of claim 1 , wherein performing the treatment step further comprises selectively removing a portion of the thallium bromide element.
13. The method of claim 12 , wherein the portion is selectively removed by way of a focused ion beam (FIB).
14. The method of claim 12 , wherein the portion is selectively removed by way of a masked etching process.
15. The method of claim 1 , wherein forming the thallium bromide element comprises forming the thallium bromide element by way of a Czochralski process.
16. The method of claim 1 , wherein forming the thallium bromide element comprises forming the thallium bromide element by way of a zone melting process.
17. The method of claim 1 , wherein forming the thallium bromide element comprises forming the thallium bromide element by way of a Bridgman-Stockbarger method.
18. The method of claim 1 , wherein performing the treatment step further comprises performing work hardening on the thallium bromide element.