MEMS device and method for producing same
A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.
1. A MEMS device comprising:
a first substrate having an element region on a surface thereof;
a second substrate opposed to the first substrate; and
a bonding section that bonds the first substrate and the second substrate to each other around a periphery of the element region,
wherein
the bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a first side of the bonding section closest to the element region to a second side of the bonding section farthest from the element region,
at least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component which has a higher melting point than a eutectic point of the first component and the second component, and
the second region contains a eutectic alloy of the first component and the second component.
2. The MEMS device according to claim 1 , wherein the first region and the third region include the hyper-eutectic alloy.
3. The MEMS device according to claim 2 , wherein
the first component and the second component have a eutectic point at 400° C. to 600° C., and
one of the first component and the second component has a melting point higher than 600° C.
4. The MEMS device according to claim 3 , wherein the first component is aluminum.
5. The MEMS device according to claim 4 , wherein the second component is one of germanium and silicon.
6. The MEMS device according to claim 1 , wherein
the first component and the second component have a eutectic point at 400° C. to 600° C., and
one of the first component and the second component has a melting point higher than 600° C.
7. The MEMS device according to claim 6 , wherein the first component is aluminum.
8. The MEMS device according to claim 7 , wherein the second component is one of germanium and silicon.
9. The MEMS device according to claim 1 , further comprising a height adjustment section between the bonding section and one of the first substrate and the second substrate.
10. The MEMS device according to claim 9 , wherein the height adjustment section is a layer composed of a material which does not undergo a eutectic reaction with the first component or the second component.