Methods and systems for fabricating high quality superconducting tapes
View Patent ↗An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.
1. A method for fabricating a superconductor film, the method comprising:
heating a superconductor substrate tape through ohmic heating with a first roller and a second roller;
delivering the heated superconductor substrate tape to a groove in a housing via the first roller and the second roller, wherein the groove is in fluid communication with a chamber positioned between two parallel channels, wherein the groove traverses the housing and is accessible at a first end and a second end of the housing, wherein the first roller is positioned exterior to the housing and guides the heated superconductor substrate tape to the groove at the first end of the housing, and wherein the second roller is positioned exterior to the housing and guides the heated superconductor substrate tape out of the second end of the housing via the groove; and
flowing at least one superconductor precursor in a gas phase through the chamber such that the at least one precursor thermally decomposes upon contact with the heated superconductor substrate tape thereby forming the superconductor film.
2. The method of claim 1 , wherein the heating of the superconductor substrate tape comprises pre-heating the superconductor substrate tape through ohmic heating via the first roller and the second roller.
3. The method of claim 1 , wherein the heating of the superconductor substrate tape occurs at a temperature between approximately 700° C. and approximately 800° C.
4. The method of claim 1 , further comprising measuring the temperature of the superconductor tape with one or more temperature monitoring devices positioned in communication with the tape in the groove.
5. The method of claim 4 , wherein the one or more temperature monitoring devices comprises at least one optical crystal probe.
6. The method of claim 4 , further comprising sending, via the one or more temperature monitoring devices, temperature readings to a controller for controlling electric power to the first roller and the second roller in a closed loop to maintain the superconductor substrate tape at a constant temperature.
7. The method of claim 1 , further comprising flowing the at least one precursor through the chamber in a direction that is at least one of parallel to a surface of the superconductor substrate tape and perpendicular to a long axis of the superconductor substrate tape.
8. The method of claim 1 , further comprising flowing the at least one precursor through the chamber in a direction parallel to a surface of the superconductor substrate tape and perpendicular to a long axis of the superconductor substrate tape.
9. The method of claim 1 , further comprising vaporizing the at least one precursor from a liquid to a gas before flowing the at least one precursor through the chamber.
10. The method of claim 1 , further comprising heating the chamber to a temperature between approximately 250° C. and approximately 300° C.
11. The method of claim 1 , wherein the at least one precursor is deposited on the superconductor substrate tape by thermal deposition.
12. The method of claim 1 , wherein the at least one precursor enters the chamber by passing through an inlet pressure buffer chamber and at least one inlet dispersion plate.
13. The method of claim 1 , wherein the chamber further comprises an array of one or more parallel-plate capacitive electrodes, and wherein the method further comprises activating the at least one precursor by plasma activation via the one or more parallel-plate capacitive electrodes.
14. A method for fabricating a superconductor film, the method comprising:
delivering a superconductor substrate tape to a groove in a housing via a first roller and a second roller, wherein the groove is in fluid communication with a chamber positioned between two parallel channels, wherein the groove traverses the housing and is accessible at a first end and a second end of the housing, wherein the first roller is positioned exterior to the housing and guides the superconductor substrate tape to the groove at the first end of the housing, and wherein the second roller is positioned exterior to the housing and guides the superconductor substrate tape out of the second end of the housing via the groove;
heating the superconductor substrate tape through ohmic heating with the first roller and the second roller; and
flowing at least one superconductor precursor in a gas phase through the chamber such that the at least one precursor thermally decomposes upon contact with the heated superconductor substrate tape thereby forming the superconductor film.
15. The method of claim 14 , wherein the heating of the superconductor substrate tape comprises pre-heating the superconductor substrate tape through ohmic heating via the first roller and the second roller.
16. The method of claim 14 , further comprising flowing the at least one precursor through the chamber in a direction that is at least one of parallel to a surface of the superconductor substrate tape and perpendicular to a long axis of the superconductor substrate tape.
17. The method of claim 14 , further comprising flowing the at least one precursor through the chamber in a direction parallel to a surface of the superconductor substrate tape and perpendicular to a long axis of the superconductor substrate tape.
18. The method of claim 14 , further comprising vaporizing the at least one precursor from a liquid to a gas before flowing the at least one precursor through the chamber.
19. The method of claim 14 , wherein the at least one precursor enters the chamber by passing through an inlet pressure buffer chamber and at least one inlet dispersion plate.
20. The method of claim 14 , wherein the chamber further comprises an array of one or more parallel-plate capacitive electrodes, and wherein the method further comprises activating the at least one precursor by plasma activation via the one or more parallel-plate capacitive electrodes.