Method and device for repairing semiconductor chips
The present invention provides a method and a device for repairing semiconductor chips. The method includes providing an LED module that includes a circuit substrate and a plurality of light-emitting units disposed on the circuit substrate, at least one of the light-emitting units being a bad light-emitting unit; projecting a laser light source generated by a laser generating module onto the bad light-emitting unit so as to decrease the bonding strength between the bad light-emitting unit and the circuit substrate; removing the bad light-emitting unit from the circuit substrate by a chip pick-and-place module so as to form a vacancy; placing a good light-emitting unit inside the vacancy by the chip pick-and-place module; and then electrically connecting the good light-emitting unit to the circuit substrate. Therefore, the bad light-emitting unit can be replaced by the good light-emitting unit so as to repair the LED module.
1. A method for repairing semiconductor chips, comprising:
providing an LED module that includes a circuit substrate and a light-emitting group disposed on the circuit substrate and electrically connected to the circuit substrate, wherein the light-emitting group includes a plurality of light-emitting units, each light-emitting unit includes an LED chip and a conductive substance disposed between a bottom side of the LED chip and the circuit substrate, and at least one of the light-emitting units is a bad light-emitting unit;
projecting a laser light source generated by a laser generating module onto the bad light-emitting unit so as to decrease the bonding strength between the bad light-emitting unit and the circuit substrate;
removing the bad light-emitting unit from the circuit substrate by a chip pick-and-place module so as to form a vacancy on the light-emitting group;
placing a good light-emitting unit inside the vacancy by the chip pick-and-place module of the light-emitting group by the chip pick-and-place module, wherein the good light-emitting unit includes a good LED chip and a new conductive substance disposed on a bottom side of the good LED chip; and
projecting the laser light source generated by the laser generating module onto the good light-emitting unit so as to fix the good light-emitting unit on the circuit substrate and electrically connect the good light-emitting unit to the circuit substrate.
2. The method of claim 1 , wherein the step of projecting the laser light source generated by the laser generating module onto the bad light-emitting unit further comprises:
detecting a position of a contact interface between the circuit substrate and the conductive substance of the bad light-emitting unit by a position detecting module; and
projecting the laser light source generated by the laser generating module onto the contact interface between the circuit substrate and the conductive substance of the bad light-emitting unit so as to decrease the bonding strength between the circuit substrate and the conductive substance of the bad light-emitting unit;
wherein the position detecting module includes a receiving element for receiving a detection wave;
wherein the LED chip is a GaN LED chip, the conductive substance is an anisotropic conductive film, and the new conductive substance is an anisotropic conductive paste.
3. The method of claim 1 , wherein the step of projecting the laser light source generated by the laser generating module onto the good light-emitting unit further comprises:
detecting a position of the new conductive substance of the good light-emitting unit by a position detecting module; and
projecting the laser light source generated by the laser generating module onto the new conductive substance of the good light-emitting unit so as to solidify the new conductive substance;
wherein the position detecting module includes a receiving element for receiving a detection wave;
wherein the LED chip is a GaN LED chip, the conductive substance is an anisotropic conductive film, and the new conductive substance is an anisotropic conductive paste.
4. A method for repairing semiconductor chips, comprising:
providing an LED module that includes a circuit substrate and a plurality of light-emitting units disposed on the circuit substrate and electrically connected to the circuit substrate, wherein at least one of the light-emitting units is a bad light-emitting unit;
projecting a laser light source generated by a laser generating module onto the bad light-emitting unit so as to decrease the bonding strength between the bad light-emitting unit and the circuit substrate;
removing the bad light-emitting unit from the circuit substrate by a chip pick-and-place module so as to form a vacancy;
placing a good light-emitting unit inside the vacancy by the chip pick-and-place module; and
electrically connecting the good light-emitting unit to the circuit substrate.
5. The method of claim 4 , wherein the step of projecting the laser light source generated by the laser generating module onto the bad light-emitting unit further comprises:
detecting a position of a contact interface between the circuit substrate and a conductive substance of the bad light-emitting unit by a position detecting module; and
projecting the laser light source generated by the laser generating module onto the contact interface between the circuit substrate and the conductive substance of the bad light-emitting unit so as to decrease the bonding strength between the circuit substrate and the conductive substance of the bad light-emitting unit;
wherein the position detecting module includes a receiving element for receiving a detection wave;
wherein the LED chip is a GaN LED chip, the conductive substance is an anisotropic conductive film, and the new conductive substance is an anisotropic conductive paste.
6. The method of claim 4 , wherein the step of electrically connecting the good light-emitting unit to the circuit substrate further comprises:
projecting the laser light source generated by the laser generating module onto the good light-emitting unit so as to fix the good light-emitting unit on the circuit substrate and electrically connect the good light-emitting unit to the circuit substrate.
7. The method of claim 6 , wherein the step of projecting the laser light source generated by the laser generating module onto the good light-emitting unit further comprises:
detecting a position of the new conductive substance of the good light-emitting unit by a position detecting module; and
projecting the laser light source generated by the laser generating module onto the new conductive substance of the good light-emitting unit so as to solidify the new conductive substance;
wherein the position detecting module includes a receiving element for receiving a detection wave;
wherein the LED chip is a GaN LED chip, the conductive substance is an anisotropic conductive film, and the new conductive substance is an anisotropic conductive paste.
8. A device for repairing semiconductor chips, the device being applied to an LED module, the LED module including a circuit substrate and a plurality of light-emitting units disposed on the circuit substrate and electrically connected to the circuit substrate, at least one of the light-emitting units being a bad light-emitting unit, the device comprising:
a laser generating module adjacent to the circuit substrate and disposed under the circuit substrate for generating a laser light source; and
a chip pick-and-place module adjacent to the light-emitting unit and disposed above the light-emitting unit;
wherein the laser light source generated by the laser generating module is projected onto the bad light-emitting unit so as to decrease the bonding strength between the bad light-emitting unit and the circuit substrate;
wherein the bad light-emitting unit is removed from the circuit substrate by the chip pick-and-place module so as to form a vacancy, and a good light-emitting unit is placed inside the vacancy by the chip pick-and-place module.
9. The device of claim 8 , further comprising: a position detecting module adjacent to the circuit substrate and disposed under the circuit substrate for detecting a position of a contact interface between the circuit substrate and a conductive substance of the bad light-emitting unit, wherein the laser light source generated by the laser generating module is projected onto the contact interface between the circuit substrate and the conductive substance of the bad light-emitting unit so as to decrease the bonding strength between the circuit substrate and the conductive substance of the bad light-emitting unit, wherein the position detecting module includes a receiving element for receiving a detection wave, and wherein the LED chip is a GaN LED chip, the conductive substance is an anisotropic conductive film, and the new conductive substance is an anisotropic conductive paste.
10. The device of claim 8 , further comprising: a position detecting module adjacent to the circuit substrate and disposed under the circuit substrate for detecting a position of a new conductive substance of the good light-emitting unit, wherein the laser light source generated by the laser generating module is projected onto the good light-emitting unit so as to fix the good light-emitting unit on the circuit substrate and electrically connect the good light-emitting unit to the circuit substrate, and the laser light source generated by the laser generating module is projected onto the new conductive substance of the good light-emitting unit so as to solidify the new conductive substance, wherein the position detecting module includes a receiving element for receiving a detection wave, and wherein the LED chip is a GaN LED chip, the conductive substance is an anisotropic conductive film, and the new conductive substance is an anisotropic conductive paste.