Display panel, method of manufacturing display panel, and display device

1. A display panel, comprising:

an array substrate and a color filter layer on the array substrate,

wherein the array substrate comprises a display region and a non-display region, and the display region comprises a thin-film transistor integrated therein and a photo-sensor beside the thin-film transistor,

wherein the thin-film transistor comprises a gate, a low-concentration doped P-type amorphous silicon layer, a high-concentration doped N-type amorphous silicon layer and an amorphous silicon layer in that order from bottom to top, and the low-concentration doped P-type amorphous silicon layer extends outwardly thereby forming an extending portion,

wherein the extending portion comprises a first concave region and a second concave region, the photo-sensor is disposed in the second concave region thereby isolating the thin-film transistor from the photo-sensor, and the first concave region is positioned between the thin-film transistor and the photo-sensor,

wherein the photo-sensor comprises a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer and a light-sensitive high-concentration doped P-type amorphous silicon layer in that order from top to bottom,

wherein a data line layer is disposed in the second concave region, the photo-sensor is disposed on the data line layer and is covered with a conductive glass layer, and the photo-sensor uses the data line layer as a lower electrode and uses the conductive glass layer as an upper electrode,

wherein the thin-film transistor further comprises a source and a drain both formed on the amorphous silicon layer, and an external of the thin-film transistor is covered by a passivation layer,

wherein the thin-film transistor and the photo-sensor are below the color filter layer.

2. A display panel, comprising:

an array substrate and a color filter layer on the array substrate,

wherein the array substrate comprises a display region and a non-display region, and the display region comprises a photo-sensor and a plurality of thin-film transistors, the photo-sensor is disposed between the plurality of thin-film transistors;

wherein the plurality of thin-film transistors comprises a first thin-film transistor and an adjacent second thin-film transistor, the first thin-film transistor comprises a gate and a low-concentration doped P-type amorphous silicon layer formed on the gate, the low-concentration doped P-type amorphous silicon layer extends outwardly thereby forming an extending portion, the extending portion comprises a first concave region and a second concave region both spaced apart from the gate, the first concave region is positioned between the first thin-film transistor and the second concave region, the second concave region is positioned between the first concave region and the second thin-film transistor, and the photo-sensor is disposed in the second concave region thereby isolating the photo-sensor from the plurality of thin-film transistors.

3. The display panel as claimed in claim 2 , wherein the photo-sensor comprises a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer and a light-sensitive high-concentration doped P-type amorphous silicon layer in order from top to bottom.

4. The display panel as claimed in claim 2 ,

wherein the photo-sensor and the plurality of thin-film transistors are disposed below the color filter layer.

5. The display panel as claimed in claim 2 , wherein a data line layer is disposed in the second concave region, the photo-sensor is disposed on the data line layer-and is covered with a conductive glass layer, and the photo-sensor uses the data line layer as a lower electrode and uses the conductive glass layer as an upper electrode.

6. The display panel as claimed in claim 2 , wherein the first thin-film transistor further comprises a source and an opposite drain both formed on the amorphous silicon layer, and an external of the first thin-film transistor is covered by a passivation layer.

7. The display panel as claimed in claim 6 , wherein the source, the drain and portions of the amorphous silicon layer are covered by the passivation layer.

8. The display panel as claimed in claim 2 , wherein the first thin-film transistor further comprises a high-concentration doped N-type amorphous silicon layer and an amorphous silicon layer sequentially formed on the low-concentration doped P-type amorphous silicon layer.

9. The display panel as claimed in claim 8 , wherein a data line layer is disposed in the second concave region, the photo-sensor is disposed on the data line layer and is covered with a conductive glass layer, and the photo-sensor uses the data line layer as a lower electrode and uses the conductive glass layer as an upper electrode.

10. The display panel as claimed in claim 8 , wherein the first thin-film transistor further comprises a source and a drain opposite to the source, the source and the drain both are formed on the amorphous silicon layer, and an external of the first thin-film transistor is covered by a passivation layer so as to separate the first thin-film transistor from other portions of the array substrate.

11. A method of manufacturing a display panel, comprising:

forming a gate on a substrate;

forming a low-concentration doped P-type amorphous silicon layer on the gate;

sequentially forming a high-concentration doped N-type amorphous silicon layer, an amorphous silicon layer, and a source and a drain on the low-concentration doped P-type amorphous silicon layer to form a thin-film transistor, wherein the low-concentration doped P-type amorphous silicon layer comprises an extending portion, the extending portion comprises a first concave region and a second concave region both spaced apart from the gate;

forming a data line layer in the second concave region;

sequentially forming a light-sensitive high-concentration doped P-type amorphous silicon layer, a light-sensitive amorphous silicon layer and a light-sensitive high-concentration doped N-type amorphous silicon layer on the data line layer to form a photo-sensor, wherein the photo-sensor is positioned in the second concave region, and the first concave region is positioned between the thin-film transistor and the photo-sensor thereby isolating the photo-sensor from the thin-film transistor; and

forming a conductive glass layer on the photo-sensor, wherein the photo-sensor uses the data line layer as a lower electrode and uses the conductive glass layer as an upper electrode.

12. The method of manufacturing a display panel as claimed in claim 11 , wherein the thin-film transistor and the photo-sensor are disposed below a color filter layer.