Method of manufacture of a semiconductor device
In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
1. A method of manufacturing a device, the method comprising:
forming an opening along an outside edge between two semiconductor dies, the semiconductor die comprising external connections;
overfilling at least a portion of the opening with a buffer material, wherein after the overfilling the buffer material extends out of the opening and is separated from all of the external connections;
rounding the buffer material after the overfilling at least the portion of the first opening; and
placing an underfill material adjacent to the buffer material.
2. The method of claim 1 , further comprising singulating the semiconductor die from a semiconductor wafer after the overfilling the opening and before the placing the underfill material.
3. The method of claim 2 , wherein the singulating the semiconductor die is performed by slicing through the buffer material and the semiconductor wafer with a saw.
4. The method of claim 3 , wherein the rounding the buffer material is performed during the singulating the semiconductor die.
5. The method of claim 1 , further comprising bonding the semiconductor die to a first substrate prior to the placing the underfill material adjacent to the buffer material.
6. The method of claim 5 , wherein the underfill material flows between the first substrate and the buffer material during the placing the underfill material.
7. The method of claim 6 , further comprising bonding the first substrate to a second substrate.
8. The method of claim 1 , wherein the overfilling at least the portion of the opening with the buffer material leaves the buffer material along an entire perimeter of the semiconductor die.
9. A method of manufacturing a device, the method comprising:
partially singulating a first wafer to form a first opening within the first wafer, the first wafer comprising a semiconductor substrate of a first material, the first material having a first property with a first value, wherein the first opening extends at least partially into both a first semiconductor device and a second semiconductor device;
dispensing a buffer material into the first opening, the buffer material having the first property with a second value different from the first value, wherein after the dispensing the buffer material a portion of the buffer material is located on a portion of the first wafer outside of the first opening, wherein the dispensing the buffer material places the buffer material into corner regions of the first semiconductor device, wherein the buffer material does not extend beyond the corner regions of the first semiconductor device;
fully singulating the first wafer after the filling the first opening, wherein after the fully singulating the first wafer the buffer material remains within the first opening over the first semiconductor device;
bonding the first semiconductor device to a substrate with an external connector; and
dispensing an underfill material into a first region between the buffer material and the external connector, the first region also being closer to the first semiconductor device than a surface of the buffer material, wherein the underfill material has the first property with a third value, the second value being between the first value and the third value.
10. The method of claim 9 , wherein the partially singulating the first wafer forms the first opening to have a beveled edge.
11. The method of claim 9 , wherein the partially singulating the first wafer forms the first opening to have perpendicular sides.
12. The method of claim 9 , wherein the first property is Young's modulus.
13. The method of claim 9 , wherein the first property is a coefficient of thermal expansion.
14. The method of claim 9 , further comprising rounding the buffer material during the fully singulating the first wafer.
15. A method of manufacturing a semiconductor device, the method comprising:
providing a first semiconductor device, the first semiconductor device comprising a first external connection;
dispensing a buffer material located along an outside edge of the first semiconductor device; and
applying an underfill material extending from a sidewall of the first semiconductor device, around the buffer material, and to a point located on a line between the buffer material and the first external connection, the line extending from the buffer material to the first external connection and the line being parallel with a major surface of the first semiconductor device.
16. The method of claim 15 , wherein the underfill material is a continuous first material.
17. The method of claim 15 , wherein the buffer material extends at least partially into the first semiconductor device.
18. The method of claim 17 , further comprising forming a beveled edge on the buffer material within the first semiconductor device.
19. The method of claim 17 , further comprising forming the buffer material within the first semiconductor device to have a first side parallel with a top surface of the first semiconductor device and a second side at an angle to the first side.
20. The method of claim 17 , further comprising forming the buffer material within the first semiconductor device to have a sidewall which connects to the sidewall of the first semiconductor device.