Systems and Methods for the Synthesis of High Thermoelectric Performance Doped-SnTe Materials
A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 μV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 μV/K at any temperature.
1 . A method of manufacturing a thermoelectric composition comprising:
ball-milling a plurality of components in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant (A) according to a formula A x Sn (1-x) Te;
subsequently, mechanical-thermally processing the components; and
forming, in response to the mechanical-thermally processing, a thermoelectric composition, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 μV/K.
2 . The method of claim 1 , further comprising mechanical-thermally processing by hot-pressing.
3 . The method of claim 2 , wherein the A comprises boron (B), aluminum (Al), bismuth (Bi), zinc (Zn), sodium (Na), cobalt (Co), gallium (Ga), thallium (Tl), silicon (Si), germanium (Ge), lead (Pb), or indium (In).
4 . The method of claim 1 , wherein x is from 0.0001 to 0.01.
5 . A method of manufacturing a thermoelectric composition comprising:
ball-milling a plurality of components in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant (A) according to a formula A x Sn (1-x) Te, wherein the dopant is not lead (Pb);
subsequently, mechanical-thermally processing the components; and
forming, in response to the mechanical-thermally processing, a thermoelectric composition, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 100 μV/K from 675K-900K.
6 . The method of claim 5 , further comprising mechanical-thermally processing by hot-pressing.
7 . The method of claim 6 , wherein the at least one dopant comprises boron (B), aluminum (Al), bismuth (Bi), zinc (Zn), sodium (Na), cobalt (Co), gallium (Ga), thallium (Tl), silicon (Si), germanium (Ge), indium (In), as well as alloys and combinations thereof.
8 . The method of claim 5 , wherein x is from 0.0001 to 0.01.
9 . The method of claim 5 , wherein the ball-milling comprises ball-milling from 6 hours (h) to 18 h.
10 . The method of claim 9 , wherein the thermoelectric composition comprises a power factor above 1.5 10 −3 Wm −2 K −2 above 575 K.
11 . The method of claim 9 , wherein the thermoelectric composition comprises an electrical conductivity of less than 30 10 4 Sm −1 from 300K to 900K.
12 . The method of claim 1 , wherein the thermoelectric composition comprises a ZT of 1.0 at about 850K.
13 . The method of claim 1 , wherein the ball-milling comprises ball-milling from 6 hours (h) to 18 h.
14 . The method of claim 1 , wherein the thermoelectric composition comprises a plurality of grains from about 50 nm to about 10 microns.
15 . The method of claim 3 , wherein x is at least 0.005 and A comprises Co, Bi, Zn, or Na.
16 . The method of claim 3 , wherein x is at least 0.0025 and A comprises In.