Electronic device

1. An electronic device comprising anode, cathode and at least one emitting layer arranged between the anode and the cathode, and

at least one hole-transport layer A, comprising at least one hole-transport material

at least one p-doped hole-transport layer B, comprising at least one p-dopant and at least one hole-transport material matrix

at least one hole-transport layer C, comprising at least one hole-transport material,

where hole-transport layers A, B and C are arranged between the anode and the emitting layer, and

where hole-transport layer B is arranged on the cathode side of hole-transport layer A, and hole-transport layer C is arranged on the cathode side of hole-transport layer B,

where a layer A′, comprising at least one p-dopant and a hole-transport material matrix, is arranged between the anode and the hole-transport layer A, and

where each of the hole-transport layers A′, A, B and C comprises one or more identical or different monotriarylamine compounds, and

where the hole-transport layers A′, A, B and C are directly adjacent to each other, and

where each of the hole-transport layers B and C comprises at least one compound of one of the formulae (II) and (III)

where:

Z is CR 1 , where Z is equal to C if a substituent is bonded;

X is a single bond;

Ar 1 is on each occurrence, identically or differently, an aromatic ring system having 6 to 60 aromatic ring atoms, which may be substituted by one or more radicals R 1 ; and

R 1 is on each occurrence, identically or differently, H, D, F, Cl, Br, I, CHO, C(═O)R 2 , P(═O)(R 2 ) 2 , S(═O)R 2 , S(═O) 2 R 2 , CR 2 ═CR 2 R 2 , CN, NO 2 , Si(R 2 ) 3 , OSO 2 R 2 , a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 40 C atoms or a straight-chain alkenyl or alkynyl group having 2 to 40 C atoms or a branched or cyclic alkyl, alkenyl, alkynyl, alkoxy or thioalkoxy group having 3 to 40 C atoms, each of which may be substituted by one or more radicals R 2 , where one or more non-adjacent CH 2 groups may be replaced by R 2 C═CR 2 , C≡C, Si(R 2 ) 2 , Ge(R 2 ) 2 , Sn(R 2 ) 2 , C═O, C═S, C═Se, C═NR 2 , P(═O)(R 2 ), SO, SO 2 , NR 2 , O, S or CONR 2 and where one or more H atoms may be replaced by D, F, Cl, Br, I, CN or NO 2 , or an aromatic ring system having 6 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R 2 ;

R 2 is on each occurrence, identically or differently, H, D, CN or an aliphatic or aromatic hydrocarbon radical having 1 to 20 C atoms, in which, in addition, H atoms may be replaced by D or F;

P is equal to 0 or 1.

2. The electronic device according to claim 1 , wherein the device is selected from organic light-emitting transistors (OLETs), organic light-emitting electrochemical cells (OLECs), organic laser diodes (O-lasers) and organic electroluminescent devices (OLEDs).

3. The electronic device according to claim 1 , wherein Ar 1 is selected from benzene, naphthalene, phenanthrene, fluoranthene, biphenyl, biphenylene, terphenyl, terphenyl-ene, quaterphenyl, fluorene, spirobifluorene, and cis- or trans-indenofluorene, each of which may be substituted by one or more radicals R 1 ; and

R 1 is on each occurrence, identically or differently, H, D, F, CN, a straight-chain alkyl group having 1 to 40 C atoms or a branched or cyclic alkyl group having 3 to 40 C atoms, each of which may be substituted by one or more radicals R 2 , or an aromatic ring system having 5 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R 2 .

4. The electronic device according to claim 1 , wherein each of layers A′ and A comprises at least one compound of one of the formulae (II) and (III)

where:

Z is CR 1 , where Z is equal to C if a substituent is bonded;

X is a single bond;

Ar 1 is on each occurrence, identically or differently, an aromatic or heteroaromatic ring system having 5 to 60 aromatic ring atoms, which may be substituted by one or more radicals R 1 ; and

R 1 is on each occurrence, identically or differently, H, D, F, Cl, Br, I, CHO, C(═O)R 2 , P(═O)(R 2 ) 2 , S(═O )R 2 , S(═O) 2 R 2 , CR 2 ═CR 2 R 2 , CN, NO 2 , Si(R 2 ) 3 , OSO 2 R 2 , a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 40 C atoms or a straight-chain alkenyl or alkynyl group having 2 to 40 C atoms or a branched or cyclic alkyl, alkenyl, alkynyl, alkoxy or thioalkoxy group having 3 to 40 C atoms, each of which may be substituted by one or more radicals R 2 , where one or more non-adjacent CH 2 groups may be replaced by R 2 C═CR 2 , C≡C, Si(R 2 ) 2 , Ge(R 2 ) 2 , Sn(R 2 ) 2 , C═O, C═S, C═Se, C═NR 2 , P(═O)(R 2 ), SO, SO 2 , NR 2 , O, S or CONR 2 and where one or more H atoms may be replaced by D, F, Cl, Br, I, CN or NO 2 , or an aromatic or heteroaromatic ring system having 5 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R 2 ;

R 2 is on each occurrence, identically or differently, H, D, CN or an aliphatic, aromatic and/or heteroaromatic hydrocarbon radical having 1 to 20 C atoms, in which, in addition, H atoms may be replaced by D or F;

P is equal to 0 or 1.

5. The electronic device according to claim 1 , wherein the hole-transport layer A has a thickness of 130 to 230 nm.

6. The electronic device according to claim 1 , wherein the hole-transport layer A comprises the same compound as hole-transport material as hole-transport layer A′ does as hole-transport material matrix.

7. The electronic device according to claim 1 , wherein the hole-transport layer A comprises no p-dopant.

8. The electronic device according to claim 1 , wherein the p-dopant is selected from quinodimethane compounds, azaindenofluorenediones, azaphenalenes, azatriphenylenes, I 2 , metal halides, metal oxides, transition-metal complexes and transition-metal oxides.

9. The electronic device according to claim 1 , wherein the p-dopant is present in hole-transport layer B in a concentration of 0.1 to 20% by vol.

10. The electronic device according to claim 1 , wherein the hole-transport layer C comprises no p-dopant.

11. The electronic device according to claim 1 , wherein the hole-transport materials of hole-transport layers A and C are different.

12. The electronic device according to claim 1 , wherein the hole-transport layer B comprises the same compound as hole-transport material matrix as hole-transport layer C does as hole-transport material.

13. The electronic device according to claim 1 , wherein the hole-transport material matrix of hole-transport layer B is different from the hole-transport material of hole-transport layer C.

14. An article which comprises the electronic device according to claim 1 , wherein the article is in displays, a light source in lighting applications or a light source in medical and/or cosmetic applications.

15. An electronic device comprising anode, cathode and at least one emitting layer arranged between the anode and the cathode, and

at least one hole-transport layer A, comprising at least one hole-transport material

at least one p-doped hole-transport layer B, comprising at least one p-dopant and at least one hole-transport material matrix

at least one hole-transport layer C, comprising at least one hole-transport material,

where hole-transport layers A, B and C are arranged between the anode and the emitting layer, and

where hole-transport layer B is arranged on the cathode side of hole-transport layer A, and hole-transport layer C is arranged on the cathode side of hole-transport layer B,

where a layer A′, comprising at least one p-dopant and a hole-transport material matrix, is arranged between the anode and the hole-transport layer A, and

where each of the hole-transport layers A′, A, B and C comprises one or more identical or different monotriarylamine compounds, and

where the hole-transport layers A′, A, B and C are directly adjacent to each other, and

where the hole-transport layer A has a thickness of 130 to 230 nm.

16. The electronic device according to claim 15 , wherein the hole-transport layers A, B, C and A′ comprises at least one compound of one of the formulae (I) to (VI)

where:

Z is on each occurrence, identically or differently, N or CR 1 , where Z is equal to C if a substituent is bonded;

X, Y are on each occurrence, identically or differently, a single bond, O, S, Se, BR 1 , C(R 1 ) 2 , Si(R 1 ) 2 , NR 1 , PR 1 , C(R 1 ) 2 —C(R 1 ) 2 or CR 1 ═CR 1 ;

E is O, S, Se, BR 1 , C(R 1 ) 2 , Si(R 1 ) 2 , NR 1 , PR 1 , C(R 1 ) 2 —C(R 1 ) 2 or CR 1 ═CR 1 ;

Ar 1 is on each occurrence, identically or differently, an aromatic or heteroaromatic ring system having 5 to 60 aromatic ring atoms, which may be substituted by one or more radicals R 1 ; and

R 1 is on each occurrence, identically or differently, H, D, F, Cl, Br, I, CHO, C(═O)R 2 , P(═O)(R 2 ) 2 , S(═O)R 2 , S(═O) 2 R 2 , CR 2 ═CR 2 R 2 , CN, NO 2 , Si(R 2 ) 3 , OSO 2 R 2 , a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 40 C atoms or a straight-chain alkenyl or alkynyl group having 2 to 40 C atoms or a branched or cyclic alkyl, alkenyl, alkynyl, alkoxy or thioalkoxy group having 3 to 40 C atoms, each of which may be substituted by one or more radicals R 2 , where one or more non-adjacent CH 2 groups may be replaced by R 2 C═CR 2 , C≡C, Si(R 2 ) 2 , Ge(R 2 ) 2 , Sn(R 2 ) 2 , C═O, C═S, C═Se, C═NR 2 , P(═O)(R 2 ), SO, SO 2 , NR 2 , O, S or CONR 2 and where one or more H atoms may be replaced by D, F, Cl, Br, I, CN or NO 2 , or an aromatic or heteroaromatic ring system having 5 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R 2 ;

R 2 is on each occurrence, identically or differently, H, D, CN or an aliphatic, aromatic and/or heteroaromatic hydrocarbon radical having 1 to 20 C atoms, in which, in addition, H atoms may be replaced by D or F;

i is on each occurrence, identically or differently, 0 or 1, where the sum of all i is at least equal to 1;

p is equal to 0 or 1;

m, n are, identically or differently, 0 or 1, where the sum of m and n is equal to 1 or 2.

17. The electronic device according to claim 15 , wherein each of the hole-transport layers B and C comprises at least one compound of one of the formulae (II) and (III)

where:

Z is CR 1 , where Z is equal to C if a substituent is bonded;

X is a single bond;

Ar 1 is on each occurrence, identically or differently, an aromatic ring system having 6 to 60 aromatic ring atoms, which may be substituted by one or more radicals R 1 ; and

R 1 is on each occurrence, identically or differently, H, D, F, Cl, Br, I, CHO, C(═O)R 2 , P(═O)(R 2 ) 2 , S(═O)R 2 , S(═O) 2 R 2 , CR 2 ═CR 2 R 2 , CN, NO 2 , Si( 2 ) 3 , OSO 2 R 2 , a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 40 C atoms or a straight-chain alkenyl or alkynyl group having 2 to 40 C atoms or a branched or cyclic alkyl, alkenyl, alkynyl, alkoxy or thioalkoxy group having 3 to 40 C atoms, each of which may be substituted by one or more radicals R 2 , where one or more non-adjacent CH 2 groups may be replaced by R 2 C═CR 2 , C≡C, Si(R 2 ) 2 , Ge(R 2 ) 2 , Sn(R 2 ) 2 , C═O, C═S, C═Se, C═NR 2 , P(═O)(R 2 ), SO, SO 2 , NR 2 , O, S or CONR 2 and where one or more H atoms may be replaced by D, F, Cl, Br, I, CN or NO 2 , or an aromatic ring system having 6 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R 2 ;

R 2 is on each occurrence, identically or differently, H, D, CN or an aliphatic, or aromatic hydrocarbon radical having 1 to 20 C atoms, in which, in addition, H atoms may be replaced by D or F;

P is equal to 0 or 1.

18. The electronic device according to claim 15 , wherein the device is selected from organic light-emitting transistors (OLETs), organic light-emitting electrochemical cells (OLECs), organic laser diodes (-lasers) and organic electroluminescent devices (OLEDs).

19. The electronic device according to claim 15 , wherein each of layers A′ and A comprises at least one compound of one of the formulae (II) and (III)

where:

Z is CR 1 , where Z is equal to C if a substituent is bonded;

X is a single bond;

Ar 1 is on each occurrence, identically or differently, an aromatic or heteroaromatic ring system having 5 to 60 aromatic ring atoms, which may be substituted by one or more radicals R 1 ; and

R 1 is on each occurrence, identically or differently, H, D, F, Cl, Br, I, CHO, C(═O)R 2 , P(═O) (R 2 ) 2 , S(═O)R 2 , S(═O) 2 R 2 , CR 2 ═CR 2 R 2 , CN, NO 2 , Si(R 2 ) 3 , OSO 2 R 2 , a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 40 C atoms or a straight-chain alkenyl or alkynyl group having 2 to 40 C atoms or a branched or cyclic alkyl, alkenyl, alkynyl, alkoxy or thioalkoxy group having 3 to 40 C atoms, each of which may be substituted by one or more radicals R 2 , where one or more non-adjacent CH 2 groups may be replaced by R 2 C═CR 2 , C≡C, Si(R 2 ) 2 , Ge(R 2 ) 2 , Sn(R 2 ) 2 , C═O, C═S, C═Se, C═NR 2 , P(═O)(R 2 ), SO, SO 2 , NR 2 , O, S or CONR 2 and where one or more H atoms may be replaced by D, F, Cl, Br, I, CN or NO 2 , or an aromatic ring system having 6 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R 2 ;

R 2 is on each occurrence, identically or differently, H, D, CN or an aliphatic or aromatic hydrocarbon radical having 1 to 20 C atoms, in which, in addition, H atoms may be replaced by D or F;

P is equal to 0 or 1.

20. The electronic device according to claim 15 , wherein the hole-transport layer A comprises the same compound as hole-transport material as hole-transport layer A′ does as hole-transport material matrix.

21. The electronic device according to claim 15 , wherein the hole-transport layer A comprises no p-dopant.

22. The electronic device according to claim 15 , wherein the p-dopant is selected from quinodimethane compounds, azaindenofluorenediones, azaphenalenes, azatriphenylenes, I 2 , metal halides, metal oxides, transition-metal complexes and transition-metal oxides.

23. The electronic device according to claim 15 , wherein the p-dopant is present in hole-transport layer B in a concentration of 0.1 to 20% by vol.

24. The electronic device according to claim 15 , wherein the hole-transport layer C comprises no p-dopant.

25. The electronic device according to claim 15 , wherein the hole-transport materials of hole-transport layers A and C are different.

26. The electronic device according to claim 15 , wherein the hole-transport layer B comprises the same compound as hole-transport material matrix as hole-transport layer C does as hole-transport material.

27. The electronic device according to claim 15 , wherein the hole-transport material matrix of hole-transport layer B is different from the hole-transport material of hole-transport layer C.

28. An article which comprises the electronic device according to claim 15 , wherein the article is in displays, a light source in lighting applications or a light source in medical and/or cosmetic applications.