Vertical memory devices with conductive pads supported by dummy channels with varying dimensions
A vertical memory device includes a conductive pattern structure on a first region of a substrate, the conductive pattern structure including a stack of interleaved conductive patterns and insulation layers. A pad structure is disposed on a second region of the substrate adjacent the first region of the substrate wherein edges of the conductive patterns are disposed at spaced apart points along a first direction to provide conductive pads arranged as respective steps in a staircase arrangement. A plurality of channel structures extends through the conductive pattern structure and a plurality of dummy channel structures extends through the pad structure. Respective contact plugs are disposed on the conductive pads. Numbers of the dummy channel structures per unit area passing through the conductive pads vary. Widths of the dummy channel structures passing through the conductive pads may also vary.
1. A vertical memory device, comprising:
a conductive pattern structure on a substrate and comprising a stack of interleaved conductive patterns and insulation layers, wherein edges of the conductive patterns are disposed at spaced apart points along a first direction to provide conductive pads arranged as respective steps in a staircase arrangement;
a plurality of channel structures extending through the conductive pattern structure in a second direction perpendicular to the first direction;
a plurality of dummy channel structures extending through the conductive pads in the second direction; and
respective contact plugs on the conductive pads,
wherein a first one of the conductive pads has a first number of the dummy channel structures passing therethrough and wherein a second one of the conductive pads has a second number of the dummy channel structures passing therethrough that is different from the first number of the dummy channel structures;
wherein widths of the dummy channel structures passing through the conductive pads increase from an uppermost one of the steps toward a lowermost one of the steps and wherein a width of the dummy channel structures passing through a lowermost one of the conductive pads is less than a width of the dummy channel structures passing through a next lowermost one of the conductive pads, and
wherein a number of the dummy channel structures passing through the conductive pads decreases from the uppermost one of the conductive pads toward the lowermost one of the conductive pads and wherein a number of the dummy channel structures passing through the lowermost one of the conductive pads is greater than a number of the dummy channel structures passing through the next lowermost one of the conductive pads.
2. The vertical memory device of claim 1 , wherein the dummy channel structures passing through the first one of the conductive pads have a first width, and wherein the dummy channel structures passing through the second one of the conductive pads have a second width different than the first width.
3. The vertical memory device of claim 2 , wherein the first number of the dummy channel structures is less that the second number of the dummy channel structures and wherein the first width is greater than the second width.
4. The vertical memory device of claim 1 , wherein the first one is lower in the staircase arrangement than the second one.
5. The vertical memory device of claim 4 , wherein numbers of the dummy channel structures passing through the conductive pads decreases from an upper one of the conductive pads toward a lower one of the conductive pads in the staircase arrangement.
6. The vertical memory device of claim 1 , wherein the contact plugs are linearly aligned in the first direction, and wherein one of the contact plugs contacts a central portion of the lowermost one of the conductive pads.
7. The vertical memory device of claim 1 , wherein the contact plugs on the respective conductive pads are not linearly aligned in the first direction.
8. The vertical memory device of claim 7 , wherein the contact plugs on the conductive pads are aligned in an oblique direction having an angle with respect to the first direction, and wherein one of the contact plugs contacts a central portion of the lowermost one of the conductive pads.
9. The vertical memory device of claim 1 :
wherein the edges are first edges of the conductive patterns at spaced apart first points along the first direction to provide first conductive pads arranged as respective steps in a first staircase arrangement; and
wherein second edges of the conductive patterns are disposed at spaced apart second points along the first direction to provide second conductive pads arranged as respective steps in a second staircase arrangement.
10. The vertical memory device of claim 1 , wherein the channel structures have a first width, and wherein the dummy channel structures have a second width substantially the same as or greater than the first width.
11. A vertical memory device, comprising:
a conductive pattern structure on a first region of a substrate, the conductive pattern structure including a stack of interleaved conductive patterns and insulation layers;
a pad structure on a second region of the substrate adjacent the first region of the substrate wherein edges of the conductive patterns are disposed at spaced apart points along a first direction to provide conductive pads arranged as respective steps in a staircase arrangement;
a plurality of channel structures extending through the conductive pattern structure;
a plurality of dummy channel structures extending through the pad structure; and
respective contact plugs on the conductive pads,
wherein numbers of the dummy channel structures per unit area passing through the conductive pads vary, and
wherein widths of the dummy channel structures passing through the conductive pads vary in inverse proportion to the number of the dummy channel structures passing through the conductive pads.
12. The vertical memory device of claim 11 :
wherein first edges of the conductive patterns are disposed at spaced apart first points along the first direction to provide first conductive pads arranged as respective steps in a first staircase arrangement; and
wherein second edges of the conductive patterns are disposed at spaced apart second points along the first direction to provide second conductive pads arranged as respective steps in a second staircase arrangement.
13. The vertical memory device of claim 11 , wherein the contact plugs on the respective conductive patterns are linearly aligned in the first direction, and wherein one of the contact plugs is formed on a central portion of an upper surface of one of the conductive patterns.
14. A vertical memory device, comprising:
a conductive pattern structure on a first region of a substrate, the conductive pattern structure including a stack of interleaved conductive patterns and insulation layers;
a pad structure on a second region of the substrate adjacent the first region of the substrate wherein edges of the conductive patterns are disposed at spaced apart points along a first direction to provide conductive pads arranged as respective steps in a staircase arrangement;
a plurality of channel structures extending through the conductive pattern structure;
a plurality of dummy channel structures extending through the pad structure; and
respective contact plugs on the conductive pads,
wherein numbers of the dummy channel structures per unit area passing through the conductive pads vary,
wherein a distance between neighboring ones of the contact plugs in a second direction substantially perpendicular to the first direction decreases from an uppermost one of the conductive pads to a lowermost one of the conductive pads, and wherein one of the contact plugs is formed on a central portion of the lowermost one of the conductive pads.