Method for processing a holding plate, in particular for a clamp for holding a wafer
A method for processing a holding plate ( 10 ) of a clamping device (in particular clamp wafer chuck) for holding a component, in particular a wafer, wherein the holding plate ( 10 ) has a SiC-based surface ( 12 ) on which at least one protruding, SiC-based surface element ( 13 ) is formed, includes the steps of locally limited heating of the holding plate ( 10 ) in a predetermined surface section and creating the surface element ( 13 ) at the predetermined surface section by chemical vapor deposition, in particular by means of laser CVD. Applications of the method exist in repairing a holding plate ( 10 ) of a clamping device or manufacturing a holding plate ( 10 ) of a clamping device. Furthermore, a holding plate of a clamping device for holding a component, in particular a wafer, is described.
1. A method for processing a holding plate of a clamping device for holding a component, wherein the holding plate has a SiC-based surface on which at least one protruding, SiC-based surface element is formed, comprising the steps of
locally limited heating of the holding plate in a predetermined surface section,
creating the at least one surface element at a predetermined surface section by chemical vapor deposition, and
post-processing of the at least one surface element, wherein: (a) at least one of a height and a thickness of the at least one surface element is set; (b) the post-processing of the at least one surface element is conducted by laser irradiation; (c) in a first phase laser parameters of the laser irradiation are set in such a way that a laser ablation takes place; and (d) in a second phase laser parameters of the laser irradiation are set in such a way that a healing of the surface of the at least one surface element is carried out.
2. The method according to claim 1 , wherein
the locally limited heating is carried out by laser irradiation of the holding plate at the predetermined surface section, and
the chemical vapor deposition comprises a laser CVD process.
3. The method according to claim 1 , wherein process parameters of the chemical vapor deposition are set such that the at least one surface element has the same chemical composition as the surface of the holding plate.
4. The method according to claim 1 , wherein process parameters of the chemical vapor deposition are set such that the at least one surface element has a lower Si content than the holding plate.
5. The method according to claim 1 , further comprising the step of tempering the holding plate to a plate temperature below a process temperature of the chemical vapor deposition.
6. The method according to claim 1 , wherein a pre-structuring element of the holding plate is provided at the predetermined surface section, comprising a local recess or a local projection of the holding plate.
7. The method according to claim 1 , comprising at least one of the following features
the holding plate consists of SiC or SiSiC,
the at least one surface element comprises at least one of a burl, a web and a wall,
the at least one surface element has a height of at least 5 μm and at most 5000 μm, and
the at least one surface element has a thickness of at least 50 μm and at most 5000 μm.
8. The method according to claim 1 , wherein a plurality of protruding surface elements are formed at a plurality of predetermined surface sections.
9. The method according to claim 1 , wherein the clamping device is configured for holding a wafer.
10. The method according to claim 1 , wherein a holding plate of a clamping device is repaired.
11. The method according to claim 1 , wherein a holding plate of a clamping device is manufactured.
12. A method of manufacturing a clamping device for holding a component by electrostatic forces or vacuum, wherein at least one holding plate of the clamping device is manufactured by the method according to claim 1 .