Method for producing a semiconductor component and a semiconductor component
View Patent ↗A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the component includes a light transmissive carrier, a semiconductor body disposed on the light transmissive carrier, the semiconductor body including a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body includes a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the carrier and a contact structure including a first contact area and a second contact area arranged on the second main surface, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the contact structure comprises a via extending from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer.
1. A semiconductor component comprising:
a light transmissive carrier;
a semiconductor body disposed on the light transmissive carrier, the semiconductor body comprising a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body comprises a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the light transmissive carrier;
a contact structure comprising a first contact area and a second contact area arranged on the second main surface and a via, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the via is electrically connected to the first contact area and extends from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer;
an insulating layer covering a vertical surface of the semiconductor body, wherein the insulating layer comprises a tether or a remnant of the tether, and wherein the semiconductor component is free of a growth substrate; and
a connecting layer mechanically fixing the semiconductor body to the light transmissive carrier, wherein the tether or the remnant of the tether is embedded in the connecting layer, wherein the tether or the remnant of the tether is arranged sideways from the semiconductor body and is an additional lateral anchoring structure which enhances a mechanical stability of a connection between the light transmissive carrier and the semiconductor body.
2. The semiconductor component according to claim 1 , further comprising a first mirror layer and a second mirror layer, wherein the first mirror layer is arranged on a side of the semiconductor body facing the second main surface, wherein the second mirror layer is embedded into the light transmissive carrier, wherein the second mirror layer is arranged sideways from the semiconductor body, and wherein the first mirror layer and the second mirror layer do not overlap.
3. The semiconductor component according to claim 1 , wherein the active region is configured to generate electromagnetic radiation during operation of the semiconductor component.
4. The semiconductor component according to claim 1 , wherein phosphor particles are disposed within the light transmissive carrier.
5. The semiconductor component according to claim 1 , wherein phosphor particles are in a layer disposed on the light transmissive carrier.
6. A device comprising:
a plurality of the semiconductor components according to claim 1 , wherein the light transmissive carriers of the semiconductor components are formed as a single common light transmissive carrier.
7. The semiconductor component according to claim 1 , wherein the light transmissive carrier is an interposer or a final board, wherein, during operation of the semiconductor component, the active region is configured to generate electromagnetic radiation which is coupled out from the semiconductor component at a couple out surface of the light transmissive carrier, the couple out surface being remote from the semiconductor body.
8. The semiconductor component according to claim 1 , wherein the semiconductor component has a downward emitting configuration and the semiconductor body is arranged on the light transmissive carrier such that its radiation passage area faces the light transmissive carrier and a radiation passage area of the semiconductor component is formed by a surface of the light transmissive carrier, the surface of the light transmissive carrier being remote from the semiconductor body.
9. A semiconductor component comprising:
a light transmissive carrier;
a semiconductor body disposed on the light transmissive carrier, the semiconductor body comprising a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body comprises a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the light transmissive carrier;
a contact structure comprising a first contact area and a second contact area arranged on the second main surface and a via, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the via is electrically connected to the first contact area and extends from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer;
an insulating layer covering a vertical surface of the semiconductor body, wherein the insulating layer comprises a structured and mechanically broken tether in regions covering the light transmissive carrier, wherein the semiconductor component is free of a growth substrate, and wherein the light transmissive carrier is an interposer or a final board; and
a connecting layer fixing the semiconductor body to the light transmissive carrier, wherein the structured and mechanically broken tether is arranged sideways from the semiconductor body and is embedded in the connecting layer.
10. The semiconductor component according to claim 9 , wherein, during operation of the semiconductor component, the active region is configured to generate electromagnetic radiation which is coupled out from the semiconductor component at a couple out surface of the light transmissive carrier, the couple out surface being remote from the semiconductor body.
11. The semiconductor component according to claim 9 , wherein the semiconductor component has a downward emitting configuration and the semiconductor body is arranged on the light transmissive carrier such that its radiation passage area faces the light transmissive carrier and a radiation passage area of the semiconductor component is formed by a surface of the light transmissive carrier, the surface of the light transmissive carrier being remote from the semiconductor body.
12. The semiconductor component according to claim 9 , further comprising a first mirror layer and a second mirror layer, wherein the first mirror layer is arranged on a side of the semiconductor body facing the second main surface, wherein the second mirror layer is embedded into the light transmissive carrier and is arranged sideways from the semiconductor body, and wherein, in a top view, the first mirror layer and the second mirror layer do not overlap.
13. The semiconductor component according to claim 9 , wherein phosphor particles are disposed within the light transmissive carrier.
14. The semiconductor component according to claim 9 , wherein phosphor particles are arranged in a layer disposed on the light transmissive carrier.
15. A device comprising:
a plurality of the semiconductor components according to claim 9 , wherein the light transmissive carriers of the semiconductor components are formed as a single common light transmissive carrier.
16. A semiconductor component comprising:
a light transmissive carrier;
a semiconductor body disposed on the light transmissive carrier, the semiconductor body comprising a first semiconductor layer, a second semiconductor layer and an active region being arranged between the first semiconductor layer and the second semiconductor layer, wherein the semiconductor body comprises a first patterned main surface facing the light transmissive carrier and a second main surface facing away from the light transmissive carrier;
a contact structure comprising a first contact area and a second contact area arranged on the second main surface and a via, wherein the second contact area is electrically connected to the second semiconductor layer, and wherein the via is electrically connected to the first contact area and extends from the second main surface throughout the second semiconductor layer and the active region into the first semiconductor layer;
an insulating layer covering a vertical surface of the semiconductor body, wherein the insulating layer comprises a structured and mechanically broken tether in regions covering the light transmissive carrier, wherein the semiconductor component is free of a growth substrate, and wherein the light transmissive carrier is an interposer or a final board; and
a connecting layer mechanically fixing the semiconductor body to the light transmissive carrier, wherein the structured and mechanically broken tether is embedded in the connecting layer, wherein the structured and mechanically broken tether is arranged sideways from the semiconductor body, and wherein the structured and mechanically broken tether is an additional lateral anchoring structure that enhances a mechanical stability of a connection between the light transmissive carrier and the semiconductor body.
17. The semiconductor component according to claim 16 , wherein the active region is configured to generate electromagnetic radiation during operation of the semiconductor component.
18. The semiconductor component according to claim 16 , wherein phosphor particles are disposed within the light transmissive carrier.
19. The semiconductor component according to claim 16 , wherein phosphor particles are in a layer disposed on the light transmissive carrier.
20. The semiconductor component according to claim 16 , wherein the light transmissive carrier is an interposer or a final board, wherein, during operation of the semiconductor component, the active region is configured to generate electromagnetic radiation which is coupled out from the semiconductor component at a couple out surface of the light transmissive carrier, the couple out surface being remote from the semiconductor body.