Semiconductor device and method for fabricating the same
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.
1. A semiconductor device comprising:
a substrate including a first region and a second region;
a first nanowire disposed on or above the first region of the substrate;
a second nanowire disposed on or above the second region of the substrate;
a third nanowire disposed on or above the first nanowire;
a fourth nanowire disposed on or above the second nanowire;
a first gate electrode disposed on or above the first region of the substrate, and at least partially covering the first nanowire and the third nanowire;
a supporting pattern contacting at least one of the second nanowire and the fourth nanowire; and
a second gate electrode disposed on or above the second region of the substrate, extending in a first direction and at least partially covering the second nanowire, the fourth nanowire and the supporting pattern,
wherein a width in the first direction of the second nanowire is greater than that of the supporting pattern.
2. The semiconductor device of claim 1 , wherein an impurity concentration of the second nanowire is greater than that of the first nanowire.
3. The semiconductor device of claim 1 , wherein a thickness of a first portion of the first gate electrode is greater than that of a first portion of the second gate electrode, the first portion of the first gate electrode being disposed on or above the third nanowire, the first portion of the second gate electrode being disposed on or above the supporting pattern being disposed on the fourth nanowire.
4. The semiconductor device of claim 1 , wherein each of the first nanowire and the second nanowire is spaced apart from the substrate.
5. The semiconductor device of claim 1 , wherein the first gate electrode extends in a second direction, and
wherein the width in the first direction of the second nanowire is the same as a width in the second direction of the first nanowire.
6. The semiconductor device of claim 1 , wherein the first region is an active region, and
the second region is a dummy region.
7. The semiconductor device of claim 1 , wherein the first region is an NMOS region, and
the second region is a PMOS region.
8. The semiconductor device of claim 1 , wherein a distance between the first nanowire and the substrate is the same as a distance between the second nanowire and the substrate.
9. A semiconductor device comprising:
a substrate including a first region and a second region;
a nanosheet structure disposed on or above the first region of the substrate, and including a first nanowire and a first gate electrode that surrounds the first nanowire;
a fin structure disposed on or above the second region of the substrate, and including a second nanowire, a supporting pattern contacting the second nanowire, and a second gate electrode that surrounds the second nanowire,
wherein an impurity concentration of the second nanowire is greater than that of the first nanowire.
10. The semiconductor device of claim 9 , wherein a width of the second nanowire is greater than that of the supporting pattern.
11. The semiconductor device of claim 9 , wherein side surfaces of the first nanowire and the second nanowire are convexly shaped.
12. The semiconductor device of claim 9 , wherein a side surface of the supporting pattern is concavely shaped.
13. The semiconductor device of claim 9 , wherein the second nanowire is used as a channel region of a transistor.
14. The semiconductor device of claim 9 , further comprising:
a first gate spacer formed on both sidewalls of the first gate electrode; and
a second gate spacer formed on both sidewalls of the second gate electrode.
15. The semiconductor device of claim 9 , wherein the supporting pattern includes impurities.
16. A semiconductor device comprising:
a substrate including a first region and a second region;
a nanosheet structure disposed on or above the first region of the substrate, and including a first nanowire and a first gate electrode that at least partially covers the first nanowire;
a fin structure disposed on or above the second region of the substrate, and including a second nanowire, a supporting pattern contacting the second nanowire, and a second gate electrode that at least partially covers the second nanowire and the supporting pattern,
wherein a thickness of a first portion of the first gate electrode is greater than that of a first portion of the second gate electrode, the first portion of the first gate electrode being disposed on or above the first nanowire, the first portion of the second gate electrode being disposed on or above the supporting pattern being disposed on the second nanowire.
17. The semiconductor device of claim 16 , wherein a width of the second nanowire is greater than that of the supporting pattern.
18. The semiconductor device of claim 16 , wherein an impurity concentration of the second nanowire is greater than that of the first nanowire.
19. The semiconductor device of claim 16 , wherein each of the first nanowire and the second nanowire includes Si, and
the supporting pattern includes SiGe.
20. The semiconductor device of claim 16 , wherein the first region is a low voltage region, and
the second region is a high voltage region.